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  800v- Datasheet PDF File

For 800v- Found Datasheets File :: 5546    Search Time::2.406ms    
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    BRT12-H-X006 BRT12-M-X006 BRT13-H-X006 BRT12-H-X007 BRT12-H-X009 BRT13-H-X009 BRT12 BRT11 BRT13-M BRT11-H BRT11-M BRT12-

Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
Part No. BRT12-H-X006 BRT12-M-X006 BRT13-H-X006 BRT12-H-X007 BRT12-H-X009 BRT13-H-X009 BRT12 BRT11 BRT13-M BRT11-H BRT11-M BRT12-H BRT12-M BRT13 BRT13-H BRT13-H-X007
OCR Text ... Characteristics ID=f(Tj) VD=800V IT = (VT) 17241 17244 Fig. 3 Typical Off-State Current Fig. 6 Typical Output Characteristics www.vishay.com 4 Document Number 83689 Rev. 1.4, 26-Apr-04 VISHAY BRT11/ 12/ 13 Vi...
Description Optocoupler, Phototriac Output 光耦,光敏输出
Optocoupler/ Phototriac Output
O RING
Optocouplers

File Size 306.80K  /  7 Page

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    BT145 BT145-500R BT145-600R BT145-800R BT145SERIES

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. BT145 BT145-500R BT145-600R BT145-800R BT145SERIES
OCR Text ...ended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/s. October 1997 1 Rev 1.200 Philips Semiconductors Product specificat...
Description Thyristors 25 A, 500 V, SCR, TO-220AB
Transient Voltage Suppressor Diodes

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    BUZ80A 2955

ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. BUZ80A 2955
OCR Text 800V - 2.5 - 3.8A - TO-220 FAST POWER MOS TRANSISTOR TYPE BUZ80A V DSS 800 V R DS(on) <3 ID 3.8 A s s s s s s s TYPICAL RDS(on) = 2.5 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 1...
Description OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
N - CHANNEL 800V - 2.5ohm - 3.8A - TO-220 FAST POWER MOS TRANSISTOR
N - CHANNEL 800V - 2.5W - 3.8A - TO-220 FAST POWER MOS TRANSISTOR
From old datasheet system

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    CM100DY-28H

POWEREX[Powerex Power Semiconductors]
Part No. CM100DY-28H
OCR Text ... = 125C Total Gate Charge VCC = 800V, IC = 100A, VGE = 15V * Pulse width and repetition rate should be such that device junction temperature rise is negligible. Min. - - 5.0 - - - Typ. - - 6.5 3.1 2.95 510 Max. 1.0 0.5 8.0 4.2* - ...
Description Dual IGBTMOD 100 Amperes/1400 Volts

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    CM150DY-28H

Powerex Power Semicondu...
POWEREX[Powerex Power Semiconductors]
Part No. CM150DY-28H
OCR Text ... = 125C Total Gate Charge VCC = 800V, IC = 150A, VGE = 15V * Pulse width and repetition rate should be such that device junction temperature rise is negligible. Min. - - 5.0 - - - Typ. - - 6.5 3.1 2.95 765 Max. 1.0 0.5 8.0 4.2* - ...
Description Dual IGBTMOD 150 Amperes/1400 Volts

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    CM200DY-28H

MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. CM200DY-28H
OCR Text ...Emitter-Collector Voltage VCC = 800V, IC = 200A, VGE = 15V IE = 200A, VGE = 0V Min. - - 5.0 - - - - Typ. - - 6.5 3.1 2.95 1020 - Max. 1.0 0.5 8.0 4.2** - - 3.8 Units mA A Volts Volts Volts nC Volts ** Pulse width and repetition rate shou...
Description IGBT Modules:1400V
HIGH POWER SWITCHING USE INSULATED TYPE

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    CM300DY-28H

MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. CM300DY-28H
OCR Text ...Emitter-Collector Voltage VCC = 800V, IC = 300A, VGE = 15V IE = 300A, VGE = 0V Min. - - 5.0 - - - - Typ. - - 6.5 3.1 2.95 1530 - Max. 1.0 0.5 8.0 4.2** - - 3.8 Units mA A Volts Volts Volts nC Volts ** Pulse width and repetition rate shou...
Description IGBT Modules:1400V
HIGH POWER SWITCHING USE INSULATED TYPE

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    CM50DY-28H

MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. CM50DY-28H
OCR Text ...Emitter-Collector Voltage VCC = 800V, IC = 50A, VGE = 15V IE = 50A, VGE = 0V Min. - - 5.0 - - - - Typ. - - 6.5 3.1 2.95 255 - Max. 1.0 0.5 8.0 4.2** - - 3.8 Units mA A Volts Volts Volts nC Volts ** Pulse width and repetition rate should ...
Description IGBT Modules:1400V
MEDIUM POWER SWITCHING USE INSULATED TYPE

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    CM75DY-28H

Mitsubishi Electric Sem...
Powerex Power Semiconductors
Mitsubishi Electric Semiconductor
Mitsubishi Electric Corporation
Part No. CM75DY-28H
OCR Text ...Emitter-Collector Voltage VCC = 800V, IC = 75A, VGE = 15V IE = 75A, VGE = 0V Min. - - 5.0 - - - - Typ. - - 6.5 3.1 2.95 383 - Max. 1.0 0.5 8.0 4.2** - - 3.8 Units mA A Volts Volts Volts nC Volts ** Pulse width and repetition rate should ...
Description HIGH POWER SWITCHING USE INSULATED TYPE
IGBT Modules:1400V

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    FR154GP FR157GP FR153GP FR152GP FR155GP FR151GP FR156GP

Micro Commercial Components, Corp.
MCC[Micro Commercial Components]
Part No. FR154GP FR157GP FR153GP FR152GP FR155GP FR151GP FR156GP
OCR Text ...Voltage 50V 100V 200V 400V 600V 800V 1000V Maximum RMS Voltage 35V 70V 140V 280V 420V 560V 700V Maximum DC Blocking Voltage 50V 100V 200V 400V 600V 800V 1000V D --------------- A Cathode Mark B Electrical Characteristics @ 25C U...
Description 1.5 Amp Glass Passivated Fast Recovery Rectifier 50 to 1000 Volts 1.5 A, 1000 V, SILICON, RECTIFIER DIODE, DO-15
1.5 Amp Glass Passivated Fast Recovery Rectifier 50 to 1000 Volts 1.5 A, 400 V, SILICON, RECTIFIER DIODE, DO-15

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