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  720v Datasheet PDF File

For 720v Found Datasheets File :: 430    Search Time::2.406ms    
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    2SK3532 2SK3532-01MR

FUJI[Fuji Electric]
Part No. 2SK3532 2SK3532-01MR
OCR Text ...VGS VDS=900V VGS=0V Tch=25C VDS=720v VGS=0V Tch=125C VGS=30V VDS=0V ID=3A VGS=10V ID=3A VDS=25V VDS=25V VGS=0V f=1MHz VCC=600V ID=3A VGS=10V RGS=10 VCC=450V ID=6A VGS=10V L=12.4mH Tch=25C IF=6A VGS=0V Tch=25C IF=6A VGS=0V -di/dt=100A/s Tch...
Description    N-CHANNEL SILICON POWER MOSFET
N Channel Silicon Power MOSFET

File Size 110.69K  /  4 Page

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    International Rectifier, Corp.
Part No. IRG4PH20K
OCR Text ...control, t sc =10s, v cc = 720v , t j = 125c, v ge = 15v ? combines low conduction losses with high switching speed ? latest generation design provides tighter parameter distribution and higher efficiency than previous gener...
Description INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3.17V, @Vge=15V, Ic=5.0A) 绝缘栅双极晶体管(VCES和\u003d 1200伏,的Vce(on)典\u003d 3.17V,@和VGE \u003d 15V的,集成电路\u003d 5.0a中)

File Size 230.22K  /  8 Page

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    SSH10N90A

Fairchild Semiconductor
Part No. SSH10N90A
OCR Text ...25 70 20 330 105 165 - - nC VDS=720v, VGS=10V ID=10A See Fig 6 & Fig 12 { | ns VDD=450V, ID=10A RG=9.6 See Fig 13 {| pF Units V V/C V nA A S Test Conditions VGS=0V, ID=250A ID=250A, VGS=30V VGS= -30V VDS=900V VDS=720v, TC=125C VGS=10V, ID=...
Description N-CHANNEL POWER MOSFET

File Size 246.04K  /  8 Page

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    Fuji Semiconductors
Part No. 2SK3728-01MR
OCR Text ...00V VGS=0V Tch=25C Tch=125C VDS=720v VGS=0V VGS=30V VDS=0V ID=1.1A VGS=10V ID=1.1A VDS=25V VDS=25V VGS=0V f=1MHz VCC=600V ID=1.1A VGS=10V RGS=10 VCC=450V ID=2.2A VGS=10V L=48.2mH Tch=25C IF=2.2A VGS=0V Tch=25C IF=2.2A VGS=0V -di/dt=100A/s ...
Description Power MOSFET

File Size 161.86K  /  4 Page

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    IRGPF50F

International Rectifier
IRF
Part No. IRGPF50F
OCR Text ...TJ = 25C ---ns IC = 28A, V CC = 720v 280 VGE = 15V, R G = 5.0 180 Energy losses include "tail" ------mJ See Fig. 9, 10, 11, 14 4.1 ---TJ = 150C, ---ns IC = 28A, V CC = 720v ---VGE = 15V, R G = 5.0 ---Energy losses include "tail" ---mJ See F...
Description INSULATED GATE BIPOLAR TRANSISTOR(Vces=900V, @Vge=15V, Ic=28A)

File Size 225.38K  /  6 Page

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    HFH6N90

SemiHow Co.,Ltd.
Part No. HFH6N90
OCR Text ... ? q g total gate charge v ds = 720v, i d = 6.0 a, v gs = 10 v (note 4,5) -- 35 45 nc q gs gate - source charge -- 10 -- nc q gd gate - drain charge -- 13 -- nc semihow rev.a0,mar 2010 hfh6n90 0 5 10 15 20 25 30 35 40 0 2 4 6 8 10 12 v d...
Description 900V N-Channel MOSFET

File Size 909.15K  /  7 Page

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    Infineon Technologies
Part No. H30T90
OCR Text ...pf gate charge q gate v cc =720v, i c =30a v ge =15v - 280 - nc internal emitter inductance measured 5mm (0.197 in.) from case l e - 13 - nh ihw30n90t soft switching series q power semiconductors 3 rev....
Description IGBT

File Size 285.54K  /  12 Page

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    International Rectifier, Corp.
Part No. IRG4PH50KDPBF
OCR Text ...control, t sc =10s, v cc = 720v , t j = 125c, v ge = 15v ? combines low conduction losses with high switching speed ? tighter parameter distribution and higher efficiency than previous generations ? igbt co-packaged with he...
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 绝缘栅双极型晶体管,超快软恢复二极管

File Size 674.13K  /  11 Page

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    2SK3728-01MR

Fuji Electric
Part No. 2SK3728-01MR
OCR Text ... dss v ds =900v v gs =0v v ds =720v v gs =0v v gs =30v i d =1.1a v gs =10v i d =1.1a v ds =25v v cc =600v i d =1.1a v gs =10v r gs =10 ? min. typ. max. units v v a na ? s pf nc a v s c ns min. typ. max....
Description N-CHANNEL SILICON POWER MOSFET

File Size 100.13K  /  4 Page

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