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645.30 Datasheet PDF File

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				Philips Semiconductors
Part No.	KMZ11B1
OCR Text	...St, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108, Te...
Description	Magnetic field sensor
File Size	63.60K / 8 Page	View it Online	Download Datasheet

				ITT, Corp. SIEMENS AG SIEMENS[Siemens Semiconductor Group] SIEMENS A G
Part No.	LGZ180-CO LRZ180-CO Q62703-Q1497 Q62703-Q1501 LGZ184-CO Q62703-Q1515 LGZ181-CO LGZ182-CO LGZ183-CO LGZ185-CO LGZ186-CO LGZ188-CO LRZ181-CO LRZ182-CO LRZ183-CO LRZ184-CO LRZ185-CO LRZ186-CO LRZ187-CO LRZ188-CO LRZ189-CO LRZ18X LYZ181-CO Q62703-Q1495 Q62703-Q1496 Q62703-Q1498 Q62703-Q1499 Q62703-Q1500 Q62703-Q1502 Q62703-Q1503 Q62703-Q1504 Q62703-Q1505 Q62703-Q1506 Q62703-Q1507 Q62703-Q1508 Q62703-Q1509 Q62703-Q1510 Q62703-Q1511 Q62703-Q1513 SIEMENSAG-Q62703-Q1507
OCR Text	...Y 586 LG 565 nm Einheit Unit 645 590 570 nm 35 45 25 nm 100 1.6 2.0 0.01 10 25 100 2.0 2.6 0.01 10 10 100 2.0 2.6 0.01 10 15 Grad deg. V V A A pF (typ.) VF (max.) VF (typ.) IR (max.) IR (typ.) C0 (t...
Description	Array LED 2 mm LED/ Diffused Array LED 2 mm LED, Diffused SINGLE COLOR LED ARRAY, GREEN, 2 mm Array LED 2 mm LED, Diffused 2毫米阵列发光二极管发光，漫射 Array LED 2 mm LED, Diffused SINGLE COLOR LED ARRAY, RED, 2 mm Array LED 2 mm LED Diffused
File Size	401.98K / 7 Page	View it Online	Download Datasheet

				PHILIPS[Philips Semiconductors]
Part No.	PDZ10B PDZ11B PDZ16B PDZ18B PDZ8.2B PDZ9.1B PDZ6.2B PDZ4.3B PDZ3.0B PDZ5.6B PDZ30B PDZ2.7B PDZ22B PDZ27B PDZ20B PDZ24B PDZ2.4B PDZ3.6B PDZ4.7B PDZ5.1B PDZ36B PDZ3.9B PDZ6.8B
OCR Text	...53, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108, Te...
Description	Voltage regulator diodes
File Size	49.48K / 8 Page	View it Online	Download Datasheet

				PHILIPS[Philips Semiconductors] NXP Semiconductors
Part No.	PLVA650 PLVA650A PLVA653A PLVA656A PLVA659A PLVA665A PLVA600A PLVA662A PLVA668A PLVA600A_2
OCR Text	...53, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. +39 02 67 52 2531, Fax. +39 02 67 52 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108...
Description	From old datasheet system Low-voltage avalanche regulator diodes
File Size	43.82K / 8 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	1PS302
OCR Text	...53, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. +39 02 67 52 2531, Fax. +39 02 67 52 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108...
Description	High-speed double diode
File Size	52.66K / 8 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8030B2VR
OCR Text	... = 0.6 MIN TYP MAX UNIT 6600 645 320 340 31 170 16 14 59 8 7900 900 480 510 47 250 32 28 90 16 ns nC pF Gate-Source Charge Gate-Dr...30 30 20 4.5V 10 4V 0 100 200 300 400 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL O...
Description	POWER MOS V 800V 27A 0.300 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	58.13K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8030JVFR
OCR Text	...0.6 MIN TYP MAX UNIT pF 6600 645 320 340 31 170 16 14 59 8 7900 900 480 510 47 250 32 28 90 16 ns nC Gate-Source Charge Gate-Drain...30 30 20 4.5V 10 4V 0 100 200 300 400 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL O...
Description	POWER MOS V 800V 25A 0.300 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	69.94K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8030JVR
OCR Text	... = 0.6 MIN TYP MAX UNIT 6600 645 320 340 31 170 16 14 59 8 7900 900 480 510 47 250 32 28 90 16 ns nC pF Gate-Source Charge Gate-Dr...30 30 20 4.5V 10 4V 0 100 200 300 400 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL O...
Description	POWER MOS V 800V 25A 0.300 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	67.66K / 4 Page	View it Online	Download Datasheet

				Microsemi Corporation ADPOW[Advanced Power Technology] Advanced Power Technology, Ltd.
Part No.	APT8030LVFR APT8030LVFRG
OCR Text	...0.6 MIN TYP MAX UNIT pF 6600 645 320 340 31 170 16 14 59 8 7900 900 480 510 47 250 32 28 90 16 ns nC Gate-Source Charge Gate-Drain...30 30 20 4.5V 10 4V 0 100 200 300 400 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL O...
Description	POWER MOS V 800V 27A 0.300 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
File Size	62.47K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8030LVR
OCR Text	... = 0.6 MIN TYP MAX UNIT 6600 645 320 340 31 170 16 14 59 8 7900 900 480 510 47 250 32 28 90 16 ns nC pF Gate-Source Charge Gate-Dr...30 30 20 4.5V 10 4V 0 100 200 300 400 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL O...
Description	POWER MOS V 800V 27A 0.300 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	60.26K / 4 Page	View it Online	Download Datasheet

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