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Infineon
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| Part No. |
HYB39S16160CT-6 HYB39S16160CT-7
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| OCR Text |
6/-7 16-mbit synchronous dram data book 1 09.99 the hyb 39s16160ct-5.5/-6/-7 are high-speed dual-bank synchronous drams organized as 2banks...column address every clk (1-n rule) ? single 3.3 v 0.3 v power supply ? lvttl interface ? plastic ... |
| Description |
SDRAM 1M x 16 Bit
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| File Size |
160.08K /
19 Page |
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HYNIX[Hynix Semiconductor]
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| Part No. |
HY57V281620ALT-6 HY57V281620ALT-7 HY57V281620ALT-8 HY57V281620ALT-P HY57V281620AT-6 HY57V281620AT-7 HY57V281620AT-8 HY57V281620AT-H HY57V281620AT-P HY57V281620AT-K HY57V281620AT-S HY57V281620ALT-K HY57V281620ALT-H HY57V281620ALT-S HY57V281620A
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| OCR Text |
...MATION
Part No.
HY57V281620AT-6 HY57V281620AT-7 HY57V281620AT-K HY57V281620AT-H HY57V281620AT-8 HY57V281620AT-P HY57V281620AT-S HY57V28162...Column Address : CA0 ~ CA8 Auto-precharge flag : A10 RAS, CAS and WE define the operation Refer func... |
| Description |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 143MHz
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 125MHz
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 166MHz
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 133MHz
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 100MHz
4 BANKS X 2M X 16BITS SYNCHRONOUS DRAM
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| File Size |
94.05K /
13 Page |
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Hynix Semiconductor
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| Part No. |
GM71C17403C-6 GM71C17403C-7 GM71C17403CL-7 GM71S17403C-6 GM71S17403CL-5 GM71S17403CL-7 GM71C17403C-5 GM71C17403CL-6 GM71S17403C-5 GM71S17403CL-6 GM71C17403C GM71C17403CL-5 GM71S17403C-7 GM71C17403CLJ-5 GM71C17403CLJ-7 GM71C17403CJ-5 GM71C17403CJ-7 GM71C17403CJ-6 GM71CS17403CJ-5 GM71CS17403CJ-6 GM71CS17403CJ-7
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| OCR Text |
...S)17403C/CL-5 GM71C(S)17403C/CL-6 GM71C(S)17403C/CL-7 50 60 70 13 15 18
tRC
84 104 124
tHPC
20 25 30
Pin Configuration 24(26) SOJ...Column Address Strobe
Pin
WE OE VCC VSS NC
Function
Read/Write Enable Output Enable Power (+... |
| Description |
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 60ns
4,194,304 WORDS X 4 BIT CMOS DYNAMIC RAM
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 50ns, low power
CMOS DRAM 4,194,304 words x 4 bit, 5.0V, 70ns, low power
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| File Size |
96.47K /
10 Page |
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Mitsubishi Electric Corporation
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| Part No. |
MH28S72PJG-6
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| OCR Text |
6,-7 27/mar. /2001 mit-ds-406-0.2 preliminary spec. some contents are subject to change without notice. mitsubishi lsis mitsubishi electric...column access random burst w rite / single w rite (programmable) auto precharge / auto bank precha... |
| Description |
9,663,676,416-BIT ( 134,217,728-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
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| File Size |
1,014.47K /
57 Page |
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Mitsubishi Electric Corporation
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| Part No. |
MH64S72VJG-6 MH64S72VJG-5
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| OCR Text |
6 27 .feb.2001 mit-ds-0385-0.1 mitsubishi lsis preliminary spec. some contents are subject to change without notice. mitsubishi electric de...column access burst write / single write(programmable) auto precharge / all bank precharge controlle... |
| Description |
4,831,838,208-BIT ( 67,108,864-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
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| File Size |
1,006.03K /
57 Page |
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Mitsubishi Electric, Corp.
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MH4M36CJD-6 MH4M36CJD-7 MH4M36CJD-5 MH4M36CJD
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| OCR Text |
6,-7
FAST PAGE MODE ( 4194304-WORD BY 36-BIT ) DYNAMIC RAM
DESCRIPTION
The MH4M36CJD is an 4M word by 36-bit dynamic RAM module and con...Column address APD APD DNC DNC DNC DNC Input/Output Refresh Input OPN APD DNC OPN DNC DNC Output VLD... |
| Description |
FAST PAGE MODE ( 4194304-WORD BY 36-BIT ) DYNAMIC RAM 快速页面模式（4194304 - Word6位）动态随机存储器
From old datasheet system
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| File Size |
130.45K /
14 Page |
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