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				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S643232E-TN70 K4S643232E-TE50 K4S643232E- K4S643232E-TE60 K4S643232E-TE70 K4S643232E-TN50 K4S643232E-TN60 K4S643232E
OCR Text	...te Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock ...
Description	LED ORANGE DIFFUSED 2X5 RECT 200万32内存12k × 32 × 4银行同步DRAM LVTTL.3 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V) 200万32内存12k × 32 × 4银行同步DRAM LVTTL.3 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V) 200万32内存12k × 32 × 4银行同步DRAM LVTTL3.3 LED ORANGE DIFFUSED 2X5 RECT CONNECTOR ACCESSORY LED ORG/RED DIFFUSED 2X5MM RECT -2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V)
File Size	99.80K / 12 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S643232E-TP60 K4S643232E-TP70 K4S643232E-TI K4S643232E-TI60 K4S643232E-TI70
OCR Text	...te Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock ...
Description	2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存12k × 32 × 4银行同步DRAM LVTTL CONNECTOR ACCESSORY IR LED 880NM 40 DEG SIDE VIEW
File Size	98.65K / 12 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K4S643232F-TL45 K4S643232F-TL55 K4S643232F-TL70 K4S643232F-TC70 K4S643232F-TC60 K4S643232F K4S643232F-TC45 K4S643232F-TC50 K4S643232F-TC55 K4S643232F-TL50 K4S643232F-TL60
OCR Text	...te Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock ...
Description	IR LED 950NM 18 DEG DOUBLE END 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存12k × 32 × 4银行同步DRAM LVTTL
File Size	100.27K / 12 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K4S643232F-TP60 K4S643232F-TP70 K4S643232F- K4S643232F-TI60 K4S643232F-TI70
OCR Text	...te Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNGs high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock ...
Description	2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL3.3V -2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL3.3V CONNECTOR ACCESSORY 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL3.3V 200万32内存12k × 32 × 4银行同步DRAM LVTTL3.3V
File Size	98.11K / 12 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	KM29U128IT KM29U128T
OCR Text	... Flash Memory with a spare 512K(524,288)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation programs the 528-byte page in typically 200s and an erase operation can be p...
Description	16M x 8 Bit NAND Flash Memory
File Size	479.05K / 26 Page	View it Online	Download Datasheet

				TOSHIBA[Toshiba Semiconductor]
Part No.	TC55NEM208AFTN70 TC55NEM208A TC55NEM208AFPN TC55NEM208AFPN55 TC55NEM208AFPN70 TC55NEM208AFTN TC55NEM208AFTN55
OCR Text	524,288-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC55NEM208AFPN/AFTN is a 4,194,304-bit static random access memory (SRAM) organized as 524,288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device o...
Description	TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
File Size	105.55K / 10 Page	View it Online	Download Datasheet

				TOSHIBA[Toshiba Semiconductor]
Part No.	TH50VSF2580AASB TH50VSF2581AASB
OCR Text	...s SRAM 262,144 words of 16 bits 524,288 words of 8 bits 524,288 words of 8 bits * * * * * * * Function mode control for flash memory Compatible with JEDEC-standard commands Flash memory functions Simultaneous Read/Write operatio...
Description	SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE
File Size	533.68K / 50 Page	View it Online	Download Datasheet

				TOSHIBA[Toshiba Semiconductor]
Part No.	TH50VSF3582AASB TH50VSF3583AASB
OCR Text	... 4,194,304 words of 8 bits SRAM 524,288 words of 16 bits 1,048,576 words of 8 bits 1,048,576 words of 8 bits * * * * * * * PIN ASSIGNMENT (TOP VIEW) * Case: CIOF = VCC, CIOS = VCC (x16, x16) 1 2 3 4 5 6 7 8 9 10 Function m...
Description	TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS
File Size	535.38K / 50 Page	View it Online	Download Datasheet

				TOSHIBA[Toshiba Semiconductor]
Part No.	TH50VSF3680 TH50VSF3681AASB TH50VSF368
OCR Text	... 8,388,608 words of 8 bits SRAM 524,288 words of 16 bits 1,048,576 words of 8 bits 1,048,576 words of 8 bits * * * * * * * Function mode control for flash memory Compatible with JEDEC-standard commands Flash memory functions Sim...
Description	SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE
File Size	580.07K / 55 Page	View it Online	Download Datasheet

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