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4mh Datasheet PDF File

For 4mh Found Datasheets File :: 380 Search Time::0.797ms
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				ROHM[Rohm]
Part No.	RDN120N25
OCR Text	...1 Pw 10s, Duty cycle 1% 2 L 2.4mh, VDD=50V, RG=25, 1Pulse, Tch=25C A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection ...
Description	Switching (250V, 12A) From old datasheet system
File Size	75.79K / 5 Page	View it Online	Download Datasheet

				Fairchild
Part No.	FQA70N10
OCR Text	...m junction temperature 2. L = 0.4mh, IAS = 70A, VDD = 25V, RG = 25 , Starting TJ = 25C 3. ISD 70A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating tempe...
Description	TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,70A
File Size	633.03K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRH7450 2035 IRH8450
OCR Text	...ng TJ = 25C, Peak IL = 11A, L>7.4mh RG=25 ISD 11A, di/dt 120A/s, VDD BVDSS, TJ 150C Suggested RG =2.35 Pulse width 300 s; Duty Cycle 2% Pre-Irradiation Total Dose Irradiation with VGS Bias. 12 volt VGS applied and VDS = 0 during...
Description	500V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-204AA package 500V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-204AA package From old datasheet system HEXFET? TRANSISTOR
File Size	346.60K / 12 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRHN7450 2115 IRHN8450 JANSF2N7270U JANSH2N7270U JANSR2N7270U
OCR Text	...ng TJ = 25C, Peak IL = 11A, L 7.4mh, RG=25 ISD 11A, di/dt 140A/s, VDD BVDSS, TJ 150C Suggested RG =2.35 Pulse width 300 s; Duty Cycle 2% Pre-Irradiation Total Dose Irradiation with VGS Bias. 12 volt VGS applied and VDS = 0 dur...
Description	HEXFET TRANSISTOR From old datasheet system RADIATION HARDENED POWER MOSFET 500V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-1 package 500V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-1 package 500V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-1 package
File Size	306.22K / 12 Page	View it Online	Download Datasheet

				FUJI[Fuji Electric]
Part No.	2SK3888-01MR
OCR Text	...2:StartingTch=25C,IAS=3.6A,L=65.4mh, VCC=60V,RG=50 kV/s VDS< 600V = EAS limited by maximum channel temperature kV/s Note 4 and avalanch current. Tc=25C W See to the `Avalanche Energy' graph Ta=25C Note 3:Repetitive rating:Pulse width l...
Description	N-CHANNEL SILICON POWER MOSFET
File Size	93.55K / 4 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	IRFU230A IRFR230A
OCR Text	...um Junction Temperature O 2 O L=4mh, I AS=7.5A, VDD=50V, RG=27 , Starting T J =25 oC 3 _ _ _ O ISD< 9A, di/dt < 220A/ s, VDD <BVDSS , Starting T J =25 oC _ 4 O Pulse Test : Pulse Width = 250 s, Duty Cycle < 2% 5 Essentially Independent of O...
Description	Advanced Power MOSFET
File Size	255.91K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier] International Rectifier, Corp.
Part No.	10BQ060TR 10BQ60 10BQ060 10BQ060TRPBF
OCR Text	...e mJ A TJ = 25 C, IAS = 1A, L = 4mh Current decaying linearly to zero in 1 sec Frequency limited by TJ max. Va = 1.5 x Vr typical Following any rated load condition and with rated VRRM applied Electrical Specifications Parameters VFM M...
Description	1 A, 60 V, SILICON, SIGNAL DIODE, DO-214AA SCHOTTKY RECTIFIER 肖特基整流器
File Size	155.39K / 6 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier] http://
Part No.	IRHNJ53034 IRHNJ57034 IRHNJ58034 IRHNJ54034 JANSF2N7480U3 JANSG2N7480U3 JANSH2N7480U3 JANSR2N7480U3
OCR Text	... = 50V, starting TJ = 25C, L= 0.4mh Peak IL = 22A, VGS = 12V A ISD 22A, di/dt 234A/s, VDD 60V, TJ 150C A Pulse width 300 s; Duty Cycle 2% A Total Dose Irradiation with VGS Bias. 12 volt VGS applied and VDS = 0 during irradiation...
Description	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) 抗辐射功率MOSFET表面贴装系统（SMD - 0.5
File Size	187.03K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFMA450 IRFMA540
OCR Text	...= 50V, starting TJ = 25C, L= 10.4mh Peak IL =12A, VGS = 10V ISD 12A, di/dt 130A/s, Pulse width 300 s; Duty Cycle 2% VDD 500V, TJ 150C Case Outline and Dimensions --Tabless TO-254AA 0.13 [.005] A 13.84 [.545] 13.59 [.535] 6.6...
Description	500V Single N-Channel Hi-Rel MOSFET in a TO-254AA package POWER MOSFET THRU-HOLE (Tabless TO-254AA)
File Size	162.52K / 7 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	10MQ060N 10MQ060NTRPBF 10MQ060NPBF 10MQ060NTR
OCR Text	... pulse TJ = 25 C, IAS = 1A, L = 4mh Following any rated load condition and with rated VRRM applied A mJ A Electrical Specifications Parameters VFM Max. Forward Voltage Drop * See Fig. 1 (1) 10MQ 0.63 0.71 0.57 0.63 Units V V...
Description	SCHOTTKY RECTIFIER 肖特基整流器
File Size	166.54K / 6 Page	View it Online	Download Datasheet

For 4mh Found Datasheets File :: 380 Search Time::0.797ms
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