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  3a 650v Datasheet PDF File

For 3a 650v Found Datasheets File :: 137    Search Time::1.5ms    
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    IRFB9N65 IRFB9N65A

International Rectifier
Part No. IRFB9N65 IRFB9N65A
OCR Text ... VDS L D R IV E R ID 2.3a 3.3a 5.2A RG 20V tp D .U .T IA S + V - DD A 400 0 .0 1 Fig 12a. Unclamped Inductive Test Circuit V (B R )D SS tp 200 0 25 50 75 100 125 150 Starting TJ , Junction Temperatu...
Description Power MOSFET(Vdss=650v/ Rds(on)max=0.93ohm/ Id=8.5A)
650v Single N-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 107.63K  /  8 Page

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    ST Microelectronics
Part No. ACS402-5SB4 ACS402
OCR Text ...RRM dV/dt (dI/dt)c VCL IOUT = 0.3a VOUT = VDRM VOUT = VRRM VOUT = 400V gate open (dV/dt)c = 10V/s ICL = 1mA tp = 1ms tp = 500s Tj=25C Tj=25C...650v IH IH VOUT VOUT (200V/div) VCL Time (400s/div) AC LINE TRANSIENT VOLTAGE RUG...
Description QUAD AC LINE SWITCH ARRAY
QUAD AC LINE SWITCH ARRAY

File Size 91.69K  /  7 Page

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    IRFIB5N65 IRFIB5N65A

International Rectifier
Part No. IRFIB5N65 IRFIB5N65A
OCR Text ...rgy (mj) j as i d top bottom 2.3a 3.3a 5.2a irfib5n65a www.irf.com 7 p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i s...
Description 650v Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=650v/ Rds(on)max=0.93ohm/ Id=5.1A)

File Size 108.28K  /  8 Page

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    SavantIC
Part No. 2SC2979
OCR Text ...fe-1 dc current gain i c =0.3a ; v ce =5v 15 h fe-2 dc current gain i c =1.5a ; v ce =5v 7 switching times t on turn-on time 1.0 s t stg storage time 3.0 s t f fall time v cc a 250v; i c =1.5a i b1 =0.3a;i ...
Description SILICON POWER TRANSISTOR

File Size 159.06K  /  4 Page

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    Fairchild Semiconductor Corporation
Part No. FCU5N60
OCR Text ...esistance v gs = 10v, i d = 2.3a -- 0.81 0.95 ? g fs forward transconductance v ds = 40v, i d = 2.3a (note 4) -- 3.8 -- s dynamic characteristics c iss input capacitance v ds = 25v, v gs = 0v, f = 1.0mhz -- 470 600 pf c oss output cap...
Description 600V N-Channel MOSFET

File Size 847.26K  /  9 Page

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    STD6NM60N

STMicroelectronics
Part No. STD6NM60N
OCR Text ... resistance v gs = 10v, i d = 2.3a 0.85 0.92 ? table 5. dynamic symbol parameter test conditions min. typ. max. unit g fs (1) 1. pulsed: pulse duration=300s, duty cycle 1.5% forward transconductance v ds =15v, i d = 2.3a 4s c iss c oss c...
Description N-channel Power MOSFET

File Size 643.01K  /  17 Page

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    FMH25N50ES

Fuji Electric
Part No. FMH25N50ES
OCR Text ...60es fmi06n60es fmc06n60es 2.3 3a 3.00.5v fmp03n60e fmv03n60e fmi03n60e fmc03n60e 650v 0.97 9a 3.00.5v fmp09n65e fmv09n65e fmi09n65e fmc09n65e 1.47 7a 3.00.5v fmp07n65e fmv07n65e fmi07n65e fmc07n65e 700v 0.6 15a 4.00.5v fmh15n70e *1 fm...
Description This new power MOSFET realized the low switching loss and low switching noise

File Size 439.83K  /  2 Page

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    MTN7N65FP

Cystech Electonics Corp.
Part No. MTN7N65FP
OCR Text ... - 5 - s v ds =15v, i d =3a i gss - - 100 na v gs = 30 i dss - - 10 a v ds =650v, v gs =0 *r ds(on) - - 1.5 v gs =10v, i d =3.6a dynamic *qg - 28 36 *qgs - 4.5 - *qgd - 12 - nc i d =7a, v ...
Description N-Channel Enhancement Mode Power MOSFET

File Size 287.99K  /  9 Page

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    SFT66781 TR0019D

Solid States Devices, Inc
Solid States Devices, I...
Part No. SFT66781 TR0019D
OCR Text ... voltage* (i c = 15a, i b = 3a) v be (sat) - 1.5 v collector-emitter saturation voltage* (i c = 15a, i b = 3a) (t c = 25c) (t c = 125c) v ce (sat) - - 1.0 2.0 v current gain (i c = 1a, v ce = 10v , f = 5mhz) |h...
Description NPN High Speed Power Transistor
   NPN High Speed

File Size 196.12K  /  3 Page

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For 3a 650v Found Datasheets File :: 137    Search Time::1.5ms    
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