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Samsung
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| Part No. |
K9F1G08U0M
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| OCR Text |
...K9F1GXXX0M is 1G bit with spare 32M bit capacity. Its NAND cell provides the most costeffective solution for the solid state mass storage ma...word(X16 device) page and an erase operation can be performed in typical 2ms on a 128K-byte(X8 devic... |
| Description |
IC,EEPROM,NAND FLASH,128MX8,CMOS,TSSOP,48PIN,PLASTIC From old datasheet system
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| File Size |
475.80K /
39 Page |
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it Online |
Download Datasheet
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FUJITSU[Fujitsu Media Devices Limited]
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| Part No. |
MB82DP02183D MB82DP02183D-65LWT
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| OCR Text |
32M Bit (2 M word x 16 bit)
Mobile Phone Application Specific Memory
MB82DP02183D-65L
CMOS 2,097,152-WORD x 16 BIT Fast Cycle Random Access Memory with Low Power SRAM Interface
DESCRIPTION
The Fujitsu MB82DP02183D is a CMOS Fast C... |
| Description |
32M Bit (2 M word 】 16 bit) Mobile Phone Application Specific Memory
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| File Size |
168.77K /
33 Page |
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it Online |
Download Datasheet
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Fujitsu
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| Part No. |
MB84VZ064D-70 E550501
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| OCR Text |
...MORY & 64M (x16) FLASH MEMORY & 32M (x16) Mobile FCRAMTM & 8M (x16) STATIC RAM
MB84VZ064D-70
s FEATURES
* Power Supply Voltage of 2.7 V...word. Any combination of sectors can be concurrently erased. It also supports full chip erase. * Hid... |
| Description |
4-Stacked MCP From old datasheet system
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| File Size |
460.30K /
69 Page |
View
it Online |
Download Datasheet
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Price and Availability
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