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SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
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| Part No. |
K4S640432E-L1H K4S640432E-L75 K4S640432E-L1L K4S640432E-TC
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| OCR Text |
...voltage v oh 2.4 - - v i oh = -2ma output logic low voltage v ol - - 0.4 v i ol = 2ma input leakage current i li -10 - 10 ua 3 1. v ih (m...if clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter. 3. assumed i... |
| Description |
4M x 4Bit x 4 Banks Synchronous DRAM 4米4位4银行同步DRAM
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| File Size |
71.98K /
10 Page |
View
it Online |
Download Datasheet
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http:// Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
K4S161622E-TC55 K4S161622E-TC80 K4S161622E-TC10 DSK4S161622E
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| OCR Text |
...voltage v oh 2.4 - - v i oh = -2ma output logic low voltage v ol --0.4vi ol = 2ma input leakage current i li -10 - 10 ua 3 note : capacita...if clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter. 3. assumed ... |
| Description |
1M x 16 SDRAM 100万16内存
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| File Size |
679.91K /
42 Page |
View
it Online |
Download Datasheet
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