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  20.3.3a Datasheet PDF File

For 20.3.3a Found Datasheets File :: 23378    Search Time::2.906ms    
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    FS7KM-18A FS7KM-18

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. FS7KM-18A FS7KM-18
OCR Text ... 3 2 10-1 7 5 3 100ms 1ms 20 10ms 100ms TC = 25C Single Pulse DC 10 0 0 50 100 150 200 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2 3 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) CASE TEMPERATURE ...
Description HIGH-SPEED SWITCHING USE

File Size 41.74K  /  4 Page

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    FS7KM-18 FS7M0680TU FS7M0680YDTU FS7KM-18A

POWEREX[Powerex Power Semiconductors]
Fairchild Semiconductor
Part No. FS7KM-18 FS7M0680TU FS7M0680YDTU FS7KM-18A
OCR Text ... 3 2 10-1 7 5 3 100ms 1ms 20 10ms 100ms TC = 25C Single Pulse DC 10 0 0 50 100 150 200 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2 3 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) CASE TEMPERATURE ...
Description Fairchild Power Switch(FPS)
Nch POWER MOSFET HIGH-SPEED SWITCHING USE

File Size 46.69K  /  4 Page

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    FS7KM-5

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. FS7KM-5
OCR Text ... 40 100s 1ms 10ms 30 20 10 0 0 50 100 150 200 TC = 25C Single Pulse DC 10-1 7 5 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) 10 VGS = 20V 10V 7V PD ...
Description HIGH-SPEED SWITCHING USE

File Size 44.05K  /  4 Page

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    HD74HCU04 HD74HCU04A

HITACHI[Hitachi Semiconductor]
Part No. HD74HCU04 HD74HCU04A
OCR Text ...r IGND Tstg Ratings -0.5 to 7.0 20 20 25 50 -65 to 150 Unit V mA mA mA mA C 2 HD74HCU04A Recommended Operating Conditions Item Suppl...3.6 4.8 0 0 0 0 0 -- -- -- -- 0 0 0 -40 Typ 5.0 -- -- -- -- -- -- -- -- -4.0 -5.2 4.0 5.2 -- -- -- -...
Description Hex Inverters

File Size 40.80K  /  9 Page

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    HD74LV00A

HITACHI[Hitachi Semiconductor]
Part No. HD74LV00A
OCR Text ... IK I OK IO I CC or IGND PT -20 50 25 50 785 500 mA mA mA mA mW VI < 0 VO < 0 or VO > VCC VO = 0 to VCC SOP TSSOP Storage tem...3. The maximum package power dissipation was calculated using a junction temperature of 150C. 3 ...
Description Quad. 2-input NAND Gates

File Size 50.42K  /  13 Page

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    IRF1010NL IRF1010NS IRF1010NSTRR IRF1010NSPBF IRF1010NSTRL IRF1010NLPBF

IRF[International Rectifier]
Part No. IRF1010NL IRF1010NS IRF1010NSTRR IRF1010NSPBF IRF1010NSTRL IRF1010NLPBF
OCR Text ...rew Max. 85 60 290 180 1.2 20 43 18 3.6 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V A mJ V/ns C Thermal Resistance Parameter RJC RJA Junction-to-Case Junction-to-Ambient ( PCB Mounted,steady-state)**...
Description 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss = 55 V/ Rds(on)=11mohm/ Id=85A)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?

File Size 144.82K  /  10 Page

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    IRF1010N

IRF[International Rectifier]
Part No. IRF1010N
OCR Text ...rew Max. 85 60 290 180 1.2 20 43 18 3.6 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V A mJ V/ns C Thermal Resistance Parameter RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-...
Description Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A?)
Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A)

File Size 154.40K  /  8 Page

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    IRF7106 IRF7106TR

IRF[International Rectifier]
Part No. IRF7106 IRF7106TR
OCR Text ... 6 4 5 RDS(on) 0.125 0.20 ID 3.0A -2.5A P-CHANNEL MOSFET Top View SO-8 Absolute Maximum Ratings Parameter N-Channel ID @ T C = 25C ID @ T C = 70C IDM PD @T C = 25C VGS dv/dt TJ, TSTG Continuous Drain Current, V GS @ 1...
Description 20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss= -20V)

File Size 157.44K  /  7 Page

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    IRF7807D2

International Rectifier
Part No. IRF7807D2
OCR Text ...aracteristics 70 60 50 40 30 20 10 0 0 0.2 0.4 0.6 0.8 1 VGS TOP 4.5V 3.5V 3.0V 2.5V 2.0V BOTTOM 0.0V 70 60 50 40 30 20 10 0 0 0.2 0.4 0.6 0.8 1 VGS 4.5V 3.5V 3.0V 2.5V 2.0V BOTTOM 0.0V TOP IS, Source-to-Drain Current (A) IS, So...
Description MOSFET / SCHOTTKY DIODE

File Size 131.40K  /  8 Page

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    IRF9952

IRF[International Rectifier]
Part No. IRF9952
OCR Text ...annel Maximum P-Channel 30 20 -2.3 -1.8 -10 -1.3 2.0 1.3 57 -1.3 0.25 Units V Pulsed Drain Current Continuous Source Current (Diode Conduction) TA = 25C Maximum Power Dissipation TA = 70C Single Pulse Avalanche Energy Avalanche...
Description Power MOSFET(Vdss= -30V)

File Size 128.20K  /  10 Page

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