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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
RA30H3340M_06 RA30H3340M RA30H3340M-101 RA30H3340M06
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| OCR Text |
...ut=30W (VGG control), Load VSWR=20:1
No parasitic oscillation No degradation or destroy
All Parameters, Conditions, Ratings and Limits...520MHz, VDD=12.5V, VGG=5V
Pout
80 60 40 20 0 100
20 0 100
80
80
INPUT POWER Pin (m... |
| Description |
RoHS Compliance , 330-400MHz 30W 12.5V, 3 Stage Amp. For MOBILE RADIO
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| File Size |
70.27K /
7 Page |
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it Online |
Download Datasheet
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Mitsubishi Electric Semicon...
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
RA30H4452M_06 RA30H4452M RA30H4452M-101 RA30H4452M06
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| OCR Text |
...ut=30W (VGG control), Load VSWR=20:1
No parasitic oscillation No degradation or destroy
All Parameters, Conditions, Ratings and Limits...520MHz, VDD=12.5V, VGG=5V
Pout
80 60 40 20 0 100
20 0 100
80
80
INPUT POWER Pin (m... |
| Description |
RoHS Compliance , 440-520MHz 30W 12.5V MOBILE RADIO
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| File Size |
70.13K /
7 Page |
View
it Online |
Download Datasheet |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
RA45H4452M_06 RA45H4452M RA45H4452M-101 RA45H4452M06
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| OCR Text |
...ut=45W (VGG control), Load VSWR=20:1
No parasitic oscillation No degradation or destroy
All parameters, conditions, ratings, and limit...520MHz, VDD=12.5V, VGG=5V
40 30 20 10 0 -15 -10 -5 0 5
40 30 20 10 0 -15 -10 -5 0 5
8 4 0
... |
| Description |
RoHS Compliance , 440-520MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO
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| File Size |
102.27K /
8 Page |
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it Online |
Download Datasheet |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
RA60H4452M1-101 RA60H4452M1
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| OCR Text |
...ut=60W (VGG control), Load VSWR=20:1
MIN
440 60 40
TYP
MAX
520
UNIT
MHz W %
Harmonic
-35 3:1 5 6 1 No parasitic oscillation No degradation or destroy
dBc -- mA mA -- --
Input VSWR Gate Current Leakage Current Stab... |
| Description |
RoHS Compliance, 440-520MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO
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| File Size |
165.67K /
9 Page |
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it Online |
Download Datasheet |
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Quanzhou Jinmei Electronic ...
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
RD00HVS1 RD00HVS1-15
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| OCR Text |
...on to case RATINGS 30 +/-10 3.1 20 200 150 -40 to +125 40 UNIT V V W mW mA
C C C/W
Note : Above parameters are guaranteed independently....520MHz Vdd=12.5V Idq=50mA Gp Po
Pin-Po CHARACTERISTICS 100 90 Pout(W) , Idd(A) 80 d(%) 70 60 50 ... |
| Description |
RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W
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| File Size |
141.85K /
6 Page |
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it Online |
Download Datasheet |
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Quanzhou Jinmei Electro...
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
RD02MUS1 RD02MUS1-15
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| OCR Text |
...on to case RATINGS UNIT 30 V +/-20 V 21.9 W 0.1 W 1.5 A C 150 -40 to +125 C C/W 5.7
Note 1: Above parameters are guaranteed independently...520MHz Idq=200mA VDD=9.2V,Po=2W(PinControl) f=175MHz,Idq=200mA,Zg=50 Load VSWR=20:1(All Phase) VDD=9... |
| Description |
Silicon MOSFET Power Transistor 175MHz,520MHz,2W
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| File Size |
237.02K /
9 Page |
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it Online |
Download Datasheet |
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Quanzhou Jinmei Electro...
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
RD15HVF1 RD15HVF1-15
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| OCR Text |
... junction to case RATINGS 30 +/-20 48 1.5(Note2) 4 150 -40 to +150 2.6
Note 1: Above parameters are guaranteed independently. Note 2: Ove...520MHz,Idq=0.5A VDD=15.2V,Po=15W(PinControl) f=175MHz,Idq=0.5A,Zg=50 Load VSWR=20:1(All Phase) VDD=1... |
| Description |
Silicon MOSFET Power Transistor, 175MHz520MHz,15W
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| File Size |
363.09K /
9 Page |
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it Online |
Download Datasheet |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
RD30HUF1
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| OCR Text |
...resistance RATINGS UNIT 30 V +/-20 V Tc=25C 75 W Zg=Zl=50 7.5 W C 175 -40 to +175 C C/W Junction to case 2.0 CONDITIONS
Note 1: Above par...520MHz,VDD=12.5V Pin=3.0W,Idq=1.0A VDD=15.2V,Po=30W(PinControl) Idq=1.0A,Zg=50 Load VSWR=20:1(All Ph... |
| Description |
Silicon MOSFET Power Transistor/520MHz/30W
Silicon MOSFET Power Transistor,520MHz,30W
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| File Size |
386.46K /
7 Page |
View
it Online |
Download Datasheet |
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