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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
ISL9R860P2 ISL9R860S3S
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| OCR Text |
...70 60 50 40 30 20 10 ta AT IF = 16a, 8A, 4A 0 100 200 300 400 500 600 900 700 800 dIF /dt, CURRENT RATE OF CHANGE (A/s) 1000 tb AT IF = 16a, 8A, 4A
Figure 3. ta and tb Curves vs Forward Current
IRRM , MAX REVERSE RECOVERY CURRENT (A) 11... |
| Description |
8A 600v Stealth Diode
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| File Size |
122.94K /
6 Page |
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FAIRCHILD[Fairchild Semiconductor]
SAMSUNG[Samsung semiconductor]
Fairchild Semiconductor Corporation
SAMSUNG SEMICONDUCTOR CO. LTD.
Fairchild Semiconductor, Corp.
Samsung Semiconductor Co., Ltd.
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| Part No. |
ISL9860PF2 ISL9R860PF2 SAMSUNGSEMICONDUCTORCO.LTD.-ISL9860PF2 R860PF2 ISL9R860PF2NL
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| OCR Text |
...70 60 50 40 30 20 10 ta AT IF = 16a, 8A, 4A 0 100 200 300 400 500 600 900 700 800 dIF /dt, CURRENT RATE OF CHANGE (A/s) 1000 tb AT IF = 16a, 8A, 4A
Figure 3. ta and tb Curves vs Forward Current
IRRM , MAX REVERSE RECOVERY CURRENT (A) 11... |
| Description |
8A, 600v Stealth⑩ Diode
8A 600v Stealth Diode
8A, 600v Stealth Diode 8A条，600v的隐形二极管
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| File Size |
113.22K /
6 Page |
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Fairchild Semiconductor
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| Part No. |
FCP16N60
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| OCR Text |
...eferenced to 25C VGS = 0V, ID = 16a VDS = 600v, VGS = 0V VDS = 480V, TC = 125C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250A VGS = 10V, ID = 8A VDS = 40V, ID = 8A VDS = 25V, VGS = 0V, f = 1.0MHz
(Note 4)
Min
600 -------... |
| Description |
600v N-Channel MOSFET
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| File Size |
846.28K /
8 Page |
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IRF[International Rectifier]
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| Part No. |
IRGPC30M
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| OCR Text |
...E(sat) 2.9V
@VGE = 15V, I C = 16a
n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have ...600v -- -- 1000 VGE = 0V, V CE = 600v, T J = 150C -- -- 100 nA VGE = 20V
Switching Characteristic... |
| Description |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600v, @Vge=15V, Ic=16a)
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| File Size |
214.09K /
6 Page |
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IRF[International Rectifier]
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| Part No. |
IRGPC30MD2
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| OCR Text |
...t) 2.9V
G
@VGE = 15V, IC = 16a
E
n-channel
Description
Co-packaged IGBTs are a natural extension of International Rectifier's wel...600v -- -- 2500 VGE = 0V, V CE = 600v, T J = 150C -- 1.4 1.7 V IC = 12A See Fig. 13 -- 1.3 1.6 IC = ... |
| Description |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600v, @Vge=15V, Ic=16a)
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| File Size |
377.61K /
8 Page |
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IRF[International Rectifier]
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| Part No. |
IRGIB7B60KD
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| OCR Text |
... 20 ICE = 4.0A ICE = 8.0A ICE = 16a ICE = 4.0A ICE = 8.0A ICE = 16a
12 10 8 6 4 2 0
Fig. 9 - Typical VCE vs. VGE TJ = -40C
Fig. 10 - Typical VCE vs. VGE TJ = 25C
20 18 16 14
VCE (V)
100
80
ICE = 4.0A ICE = 8.0A ICE = 16a... |
| Description |
600v Low-Vceon Copack IGBT in a TO-220 FullPak package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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| File Size |
432.54K /
12 Page |
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IRF[International Rectifier]
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| Part No. |
IRGPC20MD2
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| OCR Text |
...VGE = 15V 80s PULSE WIDTH I C = 16a
4.0
10
8
3.0
6
2.0
I C = 8.0A IC = 4.0A
4
1.0
2
0 25 50 75 100 125
A
150
0.0 -60 -40 -20 0 20 40 60 80
A
100 120 140 160
TC , Case Temperature (C)
TC, Cas... |
| Description |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600v, @Vge=15V, Ic=8.0A)
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| File Size |
374.16K /
8 Page |
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