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For 16-mb Found Datasheets File :: 9391 Search Time::1.125ms
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				Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	M65727FP M65727E
OCR Text	...(Switchable) However, 8.0(*A) / 16.0 are used during expansion respectively Horizontal direction: 7.5 / 15.5 / 31.5 / 63.5 / 127.5 pixel (Se...MB, not the 1MB processing time. ex. 1 (Horizontal 7.5, vertical 7.5) (550) cycles / ex. 2 (Horizon...
Description	MPEG2 MOTION ESTIMATION LSI From old datasheet system
File Size	239.45K / 55 Page	View it Online	Download Datasheet

				ZARLINK[Zarlink Semiconductor Inc]
Part No.	MT9043AN48PINSSOP MT9043 MT9043AN
OCR Text	...9 38 11 12 37 36 13 14 35 34 15 16 33 32 17 31 18 30 19 29 20 21 28 22 27 23 26 24 25 TMS TCK TRST TDI TDO IC IC FS1 FS2 IC RSEL IC MS Vd...Mb/s (CMOS Output). This is an 8kHz 61ns active low framing pulse, which marks the beginning of an S...
Description	Dual reference frequency selectable, 3,3V Digital PLL with multiple clock outputs for T1/E1 and Stratum 4 and 4E applications T1/E1 System Synchronizer
File Size	264.87K / 29 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	PH3230
OCR Text	...duty cycle < 0.1%; Figure 3 and 16 VGS = 10 V; Tmb = 25 C; Figure 2 and 4 Tmb = 25 C; pulsed; tp 10 s; Figure 4 Tmb = 25 C; Figure 1 Condit...mb) Thermal characteristics Conditions Min Typ Max Unit 3 K/W thermal resistance from junction to mo...
Description	N-channel enhancement mode field-effect transistor
File Size	94.11K / 13 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	PHD12N10E
OCR Text	...resistance MAX. 100 14 75 175 0.16 UNIT V A W C PINNING - SOT428 PIN 1 2 3 tab gate drain source DESCRIPTION PIN CONFIGURATION tab ...mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to amb...
Description	PowerMOS transistor
File Size	78.59K / 7 Page	View it Online	Download Datasheet

				http:// PHILIPS[Philips Semiconductors] NXP Semiconductors N.V.
Part No.	PHD12NQ15T PHP12NQ15T PHB12NQ15T PHB12NQ15T/T3
OCR Text	... Drain current, ID (A) 20 18 16 14 12 10 8 6 4 2 0 0 1 2 3 4 5 6 7 8 9 10 Gate-source voltage, VGS (V) 175 C Tj = 25 C VDS > ID X RDS(ON) 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 Threshold Voltage, VGS(TO) (V) maximum typical minimum -6...
Description	N-channel TrenchMOS transistor 12.5 A, 150 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET
File Size	110.51K / 12 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	PHD44N06LT PHP44N06LT PHB44N06LT
OCR Text	... V TYP. MAX. UNIT 0.95 1.0 41 0.16 44 176 1.2 A A V V ns C AVALANCHE LIMITING VALUE SYMBOL PARAMETER WDSS CONDITIONS MIN. MAX. 70 UNIT m...mb = f(t); parameter D = tp/T Drain current, ID (A) 5 10 8 6 Fig.7. Typical transfer characteris...
Description	TrenchMOS transistor Logic level FET 44 A, 55 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET
File Size	80.20K / 10 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	PHD5N20E
OCR Text	...hing times (ns) PHP5N20E Fig.16. Source-Drain diode characteristic. IF = f(VSDS); parameter Tj EAS, Normalised unclamped inductive energy (%) 100 tr td(off) tf 10 td(on) VDD = 100 V VGS = 10 V RD = 20 Ohms ID = 4.8 A Tj = 25 C 20 ...
Description	PowerMOS transistor
File Size	50.47K / 7 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	PHD66NQ03LT PHP66NQ03LT PHB66NQ03LT
OCR Text	...9.1 12.3 Max 25 66 57 93 175 12 16 Unit V A A W C m m drain-source voltage (DC) drain current (DC) Symbol Parameter 6. Limiting values T...mb) Rth(j-a) Thermal characteristics Conditions Figure 4 vertical in still air; SOT78 package mounte...
Description	Turret Lug, for 1.6mm panel thickness 66 A, 25 V, 0.0136 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB N-channel TrenchMOS transistor
File Size	112.35K / 14 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	PHP5N20E
OCR Text	...hing times (ns) PHP5N20E Fig.16. Source-Drain diode characteristic. IF = f(VSDS); parameter Tj EAS, Normalised unclamped inductive energy (%) 100 tr td(off) tf 10 td(on) VDD = 100 V VGS = 10 V RD = 20 Ohms ID = 4.8 A Tj = 25 C 20 ...
Description	PowerMOS transistor
File Size	47.45K / 7 Page	View it Online	Download Datasheet

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