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12mh Datasheet PDF File

For 12mh Found Datasheets File :: 103 Search Time::0.765ms
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				Fuji Electric
Part No.	FMV09N90E
OCR Text	...9 avalanche capability i av l=5.12mh, t ch =25c 9 - - a diode forward on-voltage v sd i f =9a, v gs =0v, t ch =25c - 0.90 1.35 v reverse recovery time trr i f =9a, v gs =0v -di/dt=100a/ s, tch=25c - 1.8 - s reverse recovery charge qrr - 1...
Description	N-CHANNEL SILICON POWER MOSFET
File Size	401.96K / 5 Page	View it Online	Download Datasheet

				ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	TEA2018 TEA2018A
OCR Text	...50 +5V 470 0 F RF Filter 2 x 12mh 1k 8 0.1F 47k 0.5A 1 220 V C A 1.2nF 100 2 3 3.9V 4 22k 4.7k 7 6 5 BA 15 9 RB 8.2 BUV 46 A BA 159 2.2k 3W TEA2018A 10F 150 1nF 1kV 47F Re 1 2018A-10.EPS Maximum Power 30W Operating Freq...
Description	CURRENT MODE SWITCHING POWER SUPPLY CONTROL CIRCUIT
File Size	75.87K / 7 Page	View it Online	Download Datasheet

				意法半导
Part No.	STEVAL-ILL016V1
OCR Text	...ings: or csm2010-127 r24 100k 2.12mh differential l r2 1k r12 1k vcc vccbulk gatedrv zcd am3121v1 obsolete product(s) - obsolete product(s) steval-ill016v1 revision history 3/4 2 revision history table 1. document revision h...
Description
File Size	155.90K / 4 Page	View it Online	Download Datasheet

				Fuji Electric
Part No.	FMV12N50E
OCR Text	...1 avalanche capability i av l=2.12mh, tch =25c 12 - - a diode forward on-voltage v sd i f =12a, v gs =0v, t ch =25c - 0.88 1.32 v reverse recovery time trr i f =12a, v gs =0v -di/dt=100a/ s, tch=25c - 0.36 - s reverse recovery charge qrr ...
Description	N-CHANNEL SILICON POWER MOSFET
File Size	430.31K / 5 Page	View it Online	Download Datasheet

				Advanced Power Technology, Ltd.
Part No.	APT5014BLL APT5014SLL
OCR Text	...4 starting t j = +25c, l =2.12mh, r g = 25 w , peak i l = 35a 2 pulse test: pulse width < 380 s, duty cycle < 2% apt reserves the right to change, without notice, the specifications and information contained herein. thermal charac...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS 电源MOS 7TM是一个低损耗，高电压，N沟道增强模式的新一代功率MOSFET Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS 7 500V 35A 0.140 Ohm
File Size	61.15K / 2 Page	View it Online	Download Datasheet

				Advanced Power Technolo... Advanced Power Technology Ltd.
Part No.	APT5014SFLL APT5014BFLL
OCR Text	... starting t j = +25c, l = 2.12mh, r g = 25 w , peak i l = 35a 2 pulse test: pulse width < 380 s, duty cycle < 2% 5dv / dt numbers reflect the limitations of the test circuit rather than the device itself. i s - i d [ cont. ...
Description	Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. POWER MOS 7 500V 35A 0.140 Ohm Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	71.25K / 2 Page	View it Online	Download Datasheet

				Seme LAB
Part No.	2N6385SMD05
OCR Text	... = 5v i c = 1.0a f = 1.0kh z l =12mh r be = 100 v be(off) = 1.5v i c = 4.5a collector ? emitter breakdown voltage collector cut?off current collector cut?off current emitter cut?off current collector?emitter breakdown voltage * collector...
Description	SILICON POWER NPN
File Size	18.59K / 2 Page	View it Online	Download Datasheet

				CAMBION Electronic Components WEARNES CAMBION LTD
Part No.	550-2960 550-2960-42-01-36 550-2960-36-03-36 550-2960-43-02-36 550-2960-23-01-00 550-2960-32-03-00
OCR Text	...ck black 30 7.9 .605 565 38 -41 12mh brown red black 50 2.5 1.05 430 32 -42 15mh brown green black 55 2.5 1.20 400 27 -43 18mh brown grey black 60 2.5 1.95 315 27 -44 22mh red red black 60 2.5 2.20 295 22 550-2960 -45 27mh red violet black ...
Description	1 ELEMENT, 2.2 uH, GENERAL PURPOSE INDUCTOR R F Choke, moulded, axial 1 ELEMENT, 15 uH, GENERAL PURPOSE INDUCTOR 1 ELEMENT, 4.7 uH, GENERAL PURPOSE INDUCTOR 1 ELEMENT, 18 uH, GENERAL PURPOSE INDUCTOR 1 ELEMENT, 0.33 uH, GENERAL PURPOSE INDUCTOR
File Size	28.07K / 2 Page	View it Online	Download Datasheet

				http://
Part No.	FMC12N50E
OCR Text	...1 avalanche capability i av l=2.12mh, tch =25c 12 - - a diode forward on-voltage v sd i f =12a, v gs =0v, t ch =25c - 0.88 1.32 v reverse recovery time trr i f =12a, v gs =0v -di/dt=100a/ s, tch=25c - 0.36 - s reverse recovery charge qrr ...
Description	N-CHANNEL SILICON POWER MOSFET
File Size	507.48K / 5 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF7311TR IRF7311TRPBF
OCR Text	...s: ? starting t j = 25c, l = 12mh r g = 25 w , i as = 4.1a. ? pulse width 300s; duty cycle 2%. parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 20 CCC CCC v v gs = 0v, i d = 250a d v (...
Description	Generation V Technology 20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package 6.6 A, 20 V, 0.029 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
File Size	212.20K / 7 Page	View it Online	Download Datasheet

For 12mh Found Datasheets File :: 103 Search Time::0.765ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | <8> | 9 | 10 | 11 |