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  100a 400v Datasheet PDF File

For 100a 400v Found Datasheets File :: 3305    Search Time::0.954ms    
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    APT8065BVFR APT10M11B2VR APT20M22B2VR APT8065

ADPOW[Advanced Power Technology]
Part No. APT8065BVFR APT10M11B2VR APT20M22B2VR APT8065
OCR Text ...Time (IS = -ID [Cont.], di/dt = 100a/s) Reverse Recovery Charge (IS = -ID [Cont.], di/dt = 100a/s) Peak Recovery Current (IS = -ID [Cont.], ...400v 8 1 .5 4 50 100 150 200 250 300 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES ...
Description POWER MOS V 800V 13A 0.650 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 63.14K  /  4 Page

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    APT8065BVR APT8065 APT8065AVR

ADPOW[Advanced Power Technology]
Part No. APT8065BVR APT8065 APT8065AVR
OCR Text ...ime (IS = -ID[Cont.], dl S/dt = 100a/s) Reverse Recovery Charge (IS = -ID[Cont.], dl S/dt = 100a/s) THERMAL CHARACTERISTICS Symbol RJC R...400v 8 1 .5 4 50 100 150 200 250 300 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES ...
Description POWER MOS V 800V 13A 0.650 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 60.69K  /  4 Page

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    APT8065SVR

ADPOW[Advanced Power Technology]
Part No. APT8065SVR
OCR Text ...ime (IS = -ID[Cont.], dl S/dt = 100a/s) Reverse Recovery Charge (IS = -ID[Cont.], dl S/dt = 100a/s) THERMAL CHARACTERISTICS Symbol RJC R...400v 8 1 .5 4 50 100 150 200 250 300 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES ...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 800V 13A 0.650 Ohm

File Size 63.31K  /  4 Page

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    APT8065 APT8065AVR

ADPOW[Advanced Power Technology]
Part No. APT8065 APT8065AVR
OCR Text ...ime (IS = -ID[Cont.], dl S/dt = 100a/s) Reverse Recovery Charge (IS = -ID[Cont.], dl S/dt = 100a/s) THERMAL CHARACTERISTICS Symbol RJC R...400v 8 1 .5 4 50 100 150 200 250 300 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES ...
Description POWER MOS V 800V 11.5A 0.650 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 60.68K  /  4 Page

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    APT8067HVR

ADPOW[Advanced Power Technology]
Part No. APT8067HVR
OCR Text ...ime (IS = -ID[Cont.], dl S/dt = 100a/s) Reverse Recovery Charge (IS = -ID[Cont.], dl S/dt = 100a/s) THERMAL CHARACTERISTICS Symbol RJC R...400v 16 10 5 TJ =+150C TJ =+25C 8 1 .5 4 50 100 150 200 250 300 Qg, TOTAL GA...
Description POWER MOS V 800V 11.5A 0.670 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 59.92K  /  4 Page

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    APT8075BVFR

ADPOW[Advanced Power Technology]
Part No. APT8075BVFR
OCR Text ...Time (IS = -ID [Cont.], di/dt = 100a/s) Reverse Recovery Charge (IS = -ID [Cont.], di/dt = 100a/s) Peak Recovery Current (IS = -ID [Cont.], ...400v 8 1 .5 4 50 100 150 200 250 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE...
Description POWER MOS V 800V 12A 0.750 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 69.90K  /  4 Page

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    APT8075BVR APT8075

Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Part No. APT8075BVR APT8075
OCR Text ...ime (IS = -ID[Cont.], dl S/dt = 100a/s) Reverse Recovery Charge (IS = -ID[Cont.], dl S/dt = 100a/s) THERMAL CHARACTERISTICS Symbol RJC R...400v 8 1 .5 4 50 100 150 200 250 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 800V 12A 0.750 Ohm

File Size 61.94K  /  4 Page

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    APT8075 APT8075BN APT8090BN

ADPOW[Advanced Power Technology]
Part No. APT8075 APT8075BN APT8090BN
OCR Text ...me (IS = -ID [Cont.], dl S/dt = 100a/s) Reverse Recovery Charge (IS = -ID [Cont.], dl S/dt = 100a/s) Q rr SAFE OPERATING AREA CHARACTE...400v 20 T = +150C J 10 5 T = +25C J 8 4 2 1 GS 40 80 120 160 200 Qg, TOTAL GATE CH...
Description POWER MOS V 800V 13.0A 0.75 Ohm / 800V 12.0A 0.90 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

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    IR51H310

IRF[International Rectifier]
Part No. IR51H310
OCR Text ... Conditions IF = 700mA di/dt = 100a/s fOSC = 20 kHz Static Electrical Characteristics VBIAS (VCC, VB) = 12V unless otherwise specifi...400v --kHz --1.0 A 2.5V < V ----mV --------V ---- V RT = 35.7 k, CT = 1 nF RT = 7.04 k, CT = 1...
Description GT 7C 7#16S PIN PLUG
SELF-OSCILLATING HALF-BRIDGE

File Size 146.39K  /  6 Page

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    IR51H320

IRF[International Rectifier]
Part No. IR51H320
OCR Text ...OSC = 20 kHz IF = 900mA di/dt = 100a/s Static Electrical Characteristics VBIAS (VCC, VB) = 12V unless otherwise specified. Symbol ...400v --kHz --1.0 A 2.5V < V ----mV --------V ---- V RT = 35.7 k, CT = 1 nF RT = 7.04 k, CT = 1...
Description SELF-OSCILLATING HALF-BRIDGE

File Size 146.36K  /  6 Page

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