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  1000-1200 Datasheet PDF File

For 1000-1200 Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | <8> | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    IXYS, Corp.
IXYS CORP
Part No. C-CWP347-18 T-CWP347-12 T-CWP347-18 W-CWP347-18 C-CWP347-12 W-CWP347-12 T-CWP22-12 W-CWP16-12 T-CWP16-12 C-CWP16-12 T-CWP35-08 C-CWP35-12
Description 392.5 A, 1800 V, SCR
392.5 A, 1200 V, SCR
47.1 A, 1200 V, SCR
37.68 A, 1200 V, SCR
81.64 A, 800 V, SCR
81.64 A, 1200 V, SCR

File Size 208.48K  /  2 Page

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    ONSEMI[ON Semiconductor]
Part No. MGY25N120_D ON1934 MGY25N120
Description Insulated Gate Bipolar Transistor 38 A, 1200 V, N-CHANNEL IGBT, TO-264
IGBT IN TO-264 A @ 90 38 A @ 25 1200 VOLTS SHORT CIRCUIT RATED
From old datasheet system

File Size 149.81K  /  5 Page

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    OKI SEMICONDUCTOR CO., LTD.
Part No. MSM6927GS-2K MSM6927GS-K MSM6947GS-K MSM6927RS
Description 1200 bps Single Chip FSK MODEM(1200bps单片FSK调制解调
1200 bps Single Chip FSK MODEM(1200bps半双工FSK调制解调ITU-T V.23,双电源供
1200 bps Single Chip FSK MODEM 1200 bps的单片FSK调制解调

File Size 225.62K  /  31 Page

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    APT26F120L APT26F120B2 APT26F120B209

Microsemi, Corp.
Microsemi Corporation
Part No. APT26F120L APT26F120B2 APT26F120B209
Description Power FREDFET; Package: TO-264 [L]; ID (A): 27; RDS(on) (Ohms): 0.58; BVDSS (V): 1200; 27 A, 1200 V, 0.58 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
Power FREDFET; Package: T-MAX&#153;; ID (A): 27; RDS(on) (Ohms): 0.58; BVDSS (V): 1200; 27 A, 1200 V, 0.58 ohm, N-CHANNEL, Si, POWER, MOSFET
N-Channel FREDFET

File Size 113.66K  /  4 Page

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    GHZTECH[GHz Technology]
Part No. 1214-55
Description 55 W, 28 V, 1200-1400 MHz common base transistor
55 Watts - 28 Volts, Pulsed Radar 1200 - 1400 MHz
BJT

File Size 326.26K  /  3 Page

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    GHZTECH[GHz Technology]
Part No. 1214-30
Description 30 W, 28 V, 1200-1400 MHz common base transistor
30 Watts, 28 Volts, Pulsed Radar 1200 - 1400 MHz
BJT

File Size 338.39K  /  3 Page

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    Central Semiconductor Corp.
Central Semiconductor, Corp.
Part No. CR40-010 CR40-040 CR40-060 CR40-020 CR40-100 CR20-100 CR20-120 CR20-080 CR40-120
Description Rectifiers, General Purpose 40 A, 400 V, SILICON, RECTIFIER DIODE, DO-5
Rectifiers, General Purpose 20 A, 1200 V, SILICON, RECTIFIER DIODE, DO-4
Rectifiers, General Purpose 40 A, 200 V, SILICON, RECTIFIER DIODE, DO-5
Rectifiers, General Purpose 40 A, 100 V, SILICON, RECTIFIER DIODE, DO-5
Rectifiers, General Purpose 40 A, 1000 V, SILICON, RECTIFIER DIODE, DO-5
Rectifiers, General Purpose 40 A, 1200 V, SILICON, RECTIFIER DIODE, DO-5
Rectifiers, General Purpose 20 A, 1000 V, SILICON, RECTIFIER DIODE, DO-4

File Size 53.24K  /  1 Page

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    KS621240

Powerex, Inc.
Powerex Power Semiconductors
Part No. KS621240
Description Single Darlington Transistor Module 400 Amperes/1200 Volts 400 A, 1200 V, NPN, Si, POWER TRANSISTOR

File Size 404.09K  /  4 Page

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    Microsemi, Corp.
Part No. MSAFZ15N40A MSAFX14N100A FSE1850 FSE1350 FSE1540 FSE2040 FSN0540 MICROSEMICORP-SCOTTSDALE-MSAFX11N80A
Description N Channel MOSFET; Package: CoolPack1; trr (nsec): 120; t(on) (nsec): 180; ID (A): 15; RDS(on) (Ohms): 0.3; PD (W): 300; BVDSS (V): 400; Rq: 0.4; VSD (V): 1.5 SMALL SIGNAL, FET
N Channel MOSFET; Package: CoolPack1; trr (nsec): 850; t(on) (nsec): 60; ID (A): 14; RDS(on) (Ohms): 0.82; PD (W): 310; BVDSS (V): 1000; Rq: 0.25; VGS(th) (V): 4; VSD (V): 1.5 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1200; t(on) (nsec): 35; ID (A): 18; RDS(on) (Ohms): 0.28; PD (W): 150; BVDSS (V): 500; Rq: 0.9; VSD (V): 1.8 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1200; t(on) (nsec): 27; ID (A): 13; RDS(on) (Ohms): 0.4; PD (W): 125; BVDSS (V): 500; Rq: 1; VSD (V): 1.4 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1000; t(on) (nsec): 35; ID (A): 15; RDS(on) (Ohms): 0.3; PD (W): 125; BVDSS (V): 400; Rq: 1; VSD (V): 1.6 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1000; t(on) (nsec): 33; ID (A): 20; RDS(on) (Ohms): 0.21; PD (W): 150; BVDSS (V): 400; Rq: 0.9; VSD (V): 1.8 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-257; trr (nsec): 660; t(on) (nsec): 17; ID (A): 5; RDS(on) (Ohms): 1; PD (W): 50; BVDSS (V): 400; Rq: 2; VSD (V): 1.6 5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 77.57K  /  1 Page

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    APT25GN120B APT25GN120BG APT25GN120S APT25GN120SG

Microsemi, Corp.
Microsemi Corporation
Part No. APT25GN120B APT25GN120BG APT25GN120S APT25GN120SG
Description Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: D3 [S]; BV(CES) (V): 1200; VCE(sat) (V): 1.7; IC (A): 33; 67 A, 1200 V, N-CHANNEL IGBT
Utilizing the latest Field Stop and Trench Gate technologies

File Size 145.42K  /  6 Page

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