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SUMIDA[Sumida Corporation]
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| Part No. |
RCR-875D RCH8011 RCH-855 RCH-875 RCH-895
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| OCR Text |
0 o0.7
( 2.5H - 10mH )
RCH-875
o8.3MAX.
DIMENSIONS (mm)
5.0
CONSTRUCTION
7.5MAX.
5.0 o0.7
( 2.2H - 10mH )
RCH-895
o8.3MAX.
DIMENSIONS (mm)
5.0
CONSTRUCTION
9.5MAX.
5.0 o0.7
( 2.5H - 47mH )
R... |
| Description |
POWER INDUCTORS
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| File Size |
170.29K /
2 Page |
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UTC[Unisonic Technologies]
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| Part No. |
RCT6L-D16-T RCT6 RCT6-D16-T
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| OCR Text |
...GS UNIT DC Supply Voltage VDD 2.0 ~ 5.0 V Input/Output Voltage GND -0.2 ~ VDD + 0.2 V Operating Temperature TOPR -20 ~ +85 Storage Temperature TSTG -40 ~ +150 Note 1.Absolute maximum ratings and operation rating recommended are those valu... |
| Description |
REMOTE CONTROLLER WITH SEVEN FUNCTIONS
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| File Size |
244.20K /
8 Page |
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it Online |
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Quanzhou Jinmei Electronic ...
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
RD00HVS1 RD00HVS1-15
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| OCR Text |
0.1 1.6+/-0.1 LOT No.
3.9+/-0.3
RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W DESCRIPTION
RD00HVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.
TYPE NAME
0.8 MIN 2.5+/-0.1
... |
| Description |
RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W
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| File Size |
141.85K /
6 Page |
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it Online |
Download Datasheet |
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Quanzhou Jinmei Electro...
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
RD02MUS1 RD02MUS1-15
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| OCR Text |
0.2+/-0.05
(0.22) (0.22) (0.25)
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
DESCRIPTION
RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF po -wer amplifiers applications.
OUTLINE
D... |
| Description |
Silicon MOSFET Power Transistor 175MHz,520MHz,2W
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| File Size |
237.02K /
9 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
RD02MUS2
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| OCR Text |
0.2+/-0.05
(0.22) (0.22) (0.25)
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
DESCRIPTION
RD02MUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF po -wer amplifiers applications. This device hav... |
| Description |
RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W
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| File Size |
239.62K /
9 Page |
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it Online |
Download Datasheet |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
RD05MMP1
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| OCR Text |
0.2+/-0.05 0.65+/-0.2 (c) (b) 7.0+/-0.2 (b) 8.0+/-0.2 6.2+/-0.2 4.2+/-0.2 5.6+/-0.2
RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W DESCRIPTION
RD05MMP1 is a MOS FET type transistor specifically designed for UHF RF power ... |
| Description |
RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W
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| File Size |
124.65K /
7 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
RD06HHF1
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| OCR Text |
0.7 1.3+/-0.4 3.6+/-0.2
Silicon MOSFET Power Transistor 30MHz,6W DESCRIPTION
RD06HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications. OUTLINE DRAWING
3.2+/-0.4
4.8MAX
9+/-0.4
*High p... |
| Description |
Silicon MOSFET Power Transistor 30MHz,6W
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| File Size |
197.08K /
7 Page |
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it Online |
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Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
RD06HVF1-101 RD06HVF1
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| OCR Text |
...+/- 20 V Tc=25C 27.8 W Zg=Zl=50 0.6 W 3 A C 150 -40 to +150 C C/W junction to case 4.5
Note 1: Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS
(Tc=25C, UNLESS OTHERWISE NOTED)
SYMBOL IDSS IGSS VTH Pout D PA... |
| Description |
MOS FET type transistor specifically designed for VHF RF power amplifiers applications.
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| File Size |
374.92K /
8 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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