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  0.0109 Datasheet PDF File

For 0.0109 Found Datasheets File :: 2818    Search Time::5.671ms    
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    2SA1627

Unisonic Technologies
Part No. 2SA1627
OCR Text ... Tj TSTG VALUE -600 -600 -7.0 1.0 -1.0 -2.0 150 -55 to +150 UNIT V V V W A A C C ELECTRICAL CHARACTERISTICS(Ta=25C, unless otherwise specified) PARAMETER Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain DC Curr...
Description PNP EPITAXIAL SILICON TRANSISTOR

File Size 95.43K  /  3 Page

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    2SA1674 2SC4391

PANASONIC[Panasonic Semiconductor]
Part No. 2SA1674 2SC4391
OCR Text ...mplementary to 2SC4391 6.90.1 0.15 Unit: mm 1.05 2.50.1 0.05 (1.45) 0.8 0.5 4.50.1 0.45-0.05 0.7 4.0 s Features q q q Low collector to emitter saturation voltage VCE(sat). High collector to emitter voltage VCEO. Allowing...
Description Silicon PNP epitaxial planer type

File Size 38.19K  /  2 Page

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    2SA1774

Weitron Technology
Part No. 2SA1774
OCR Text ...urrent Gain (IC=-1 mAdc, VCE=-6.0 Vdc) Collector-Emitter Saturation Voltage (IC=-50 mAdc, IB=-5mAdc) Output Capacitance (VCB =-12Vdc, I E =0A, f=1MHZ) Current-Gain-Bandwidth Product (IE=2 mAdc, VCE=-12 Vdc,f=30 MHZ) hFE VCE(sat) 120 -...
Description PNP General Purpose Transistors

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    2SA1774

Unisonic Technologies
Part No. 2SA1774
OCR Text ...Tj Tstg RATINGS -60 -50 -6 -0.15 0.15 150 -55 ~ +150 UNIT V V V A W ELECTRICAL CHARACTERISTICS (Ta=25, unless otherwise specified.) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base B...
Description GENERAL PURPOSE TRANSISTOR

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    2SB1116

Unisonic Technologies
Part No. 2SB1116
OCR Text ...Icp Pc Tj Tstg -50 -60 -6 -1 -2 0.75 150 -55 ~ +150 V V A A W C C VCBO -60 -80 V SYMBOL RATINGS UNIT ELECTRICAL CHARACTERISTICS (Ta=25C) PARAMETER Collector Cut-off Current Emitter Cut-off current DC Current Gain* 2SB1116 2SB1...
Description PNP EPITAXIAL SILICON TRANSISTOR

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    2SB1183 2SB1239

ROHM[Rohm]
Part No. 2SB1183 2SB1239
OCR Text ...mensions (Units : mm) 2SB1183 0.75 5.5 1.5 (3) (2) (1) 2.3 0.9 0.9 0.65 2.3 !Equivalent circuit 1.0 0.5 C 0.5 1.0 0.9 14.5 4.4 1.5 2.5 9.5 B RBE 4k ROHM : CPT3 EIAJ : SC-63 E (1) Base(Gate) (2) Coll...
Description Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
Darlington connection for high DC current gain.

File Size 54.35K  /  1 Page

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    2SB1187

List of Unclassifed Manufacturers
ETC
Part No. 2SB1187
OCR Text ...acitance CONDITIONS IC=1mA , IB=0 IC=50|I IE=50|I A , IE=0 A , IC=0 MIN 60 80 5 TYP. SYMBOL VCEO VCBO VEBO VCEsat VBEsat ICBO IEBO hFE fT Cob 2SB1187 MAX UNIT V V V IC=2A IB=0.2A IC=2A IB=0.2A VCB=60V IE=0 VEB=4V; IC=0 IC=0.5A ;...
Description Silicon Power Transistors

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    2SB1188

Weitron Technology
Part No. 2SB1188
OCR Text ...C T j, Tstg -40 -32 -5 -2 -3 0.5 150, -55 to +150 Vdc Vdc Vdc A(DC) A (Pulse)* W % C C ELECTRICAL CHARACTERISTICS (Ta=25% unless otherwise noted ) Parameter Symbol Collector-Base Breakdown Voltage (Ic=-50uA) Collector-Emitter Break...
Description Epitaxial Planar PNP Transistors

File Size 115.72K  /  5 Page

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    2SB1188 2SB1188-E-AB3-R 2SB1188-P-AB3-R 2SB1188-Q-AB3-R 2SB1188-X-AB3-R 2SB1188L-X-AB3-R 2SB1188L-E-AB3-R 2SB1188L-P-AB3

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Unisonic Technologies Co., Ltd.
友顺科技股份有限公司
UTC[Unisonic Technologies]
Part No. 2SB1188 2SB1188-E-AB3-R 2SB1188-P-AB3-R 2SB1188-Q-AB3-R 2SB1188-X-AB3-R 2SB1188L-X-AB3-R 2SB1188L-E-AB3-R 2SB1188L-P-AB3-R 2SB1188L-Q-AB3-R
OCR Text ...urrent IC -3 A Base Current IB -0.6 A Power Dissipation PD 0.5 W Junction Temperature TJ +150 Storage Temperature TSTG -40 ~ +150 Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute ...
Description MEDIUM POWER LOW VOLTAGE TRANSISTOR 3000 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR

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    2SB1424

Weitron Technology
Part No. 2SB1424
OCR Text ...mbol Limits -20 -20 -6 -3 -5 0.6 150, -55 to +150 Unit VCBO VCEO VEBO IC I CP PD Tj , Tstg Vdc Vdc Vdc A(DC) A (Pulse)* W % C C ELECTRICAL CHARACTERISTICS (Ta=25% unless otherwise noted ) Min Parameter Symbol Collector-Ba...
Description Epitaxial Planar PNP Transistors

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