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    RJK6032DPD-00J2 RJK6032DPD-15

Renesas Electronics Corporation
Part No. RJK6032DPD-00J2 RJK6032DPD-15
OCR Text ... dissipation pch note3 40.3 w channel to case thermal impedance ? ch-c 3.1 ?c/w channel temperature tch 150 ?c storage temperatu...static drain to source on state resistance r ds(on) ? 3.3 4.3 ? i d = 1.5 a, v gs = 10 v n...
Description 600V - 3A - MOS FET High Speed Power Switching

File Size 78.24K  /  7 Page

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    TOSHIBA
Part No. TPN14006NH
OCR Text ... 13 150 -55 to 150 unit v v a a w w w mj a note: using continuously under heavy loads (e.g. the application of high temperature/...static characteristics (t static characteristics (t static characteristics (t static characteristics...
Description Power MOSFET (N-ch single 30V<VDSS≤60V)

File Size 228.50K  /  9 Page

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    TOSHIBA
Part No. TK39J60w5
OCR Text ...155 150 -55 to 150 0.8 unit v a w mj a n m note: using continuously under heavy loads (e.g. the application of high temperature/...static characteristics (t static characteristics (t static characteristics (t static characteristics...
Description Power MOSFET (N-ch 500V<VDSS≤700V)

File Size 245.57K  /  10 Page

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    TOSHIBA
Part No. TK14G65w5
OCR Text ....7 54.8 150 -55 to 150 unit v a w mj a note: using continuously under heavy loads (e.g. the application of high temperature/curre...static characteristics (t static characteristics (t static characteristics (t static characteristics...
Description Power MOSFET (N-ch 500V<VDSS≤700V)

File Size 239.17K  /  10 Page

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    RJK6032DPH-E0 RJK6032DPH-E0T2

Renesas Electronics Corporation
Part No. RJK6032DPH-E0 RJK6032DPH-E0T2
OCR Text ... dissipation pch note3 40.3 w channel to case thermal impedance ? ch-c 3.1 ?c/w channel temperature tch 150 ?c storage temperatu...static drain to source on state resistance r ds(on) ? 3.3 4.3 ? i d = 1.5 a, v gs = 10 v note...
Description 600V - 3A - MOS FET High Speed Power Switching

File Size 95.62K  /  7 Page

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    TOSHIBA
Part No. TPN2R503NC
OCR Text ... 62 40 150 -55 to 150 unit v a w w w mj a note: using continuously under heavy loads (e.g. the application of high temperatur...static characteristics (t static characteristics (t static characteristics (t static characteristics...
Description Power MOSFET (N-ch single VDSS≤30V)

File Size 243.24K  /  9 Page

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    TOSHIBA
Part No. TPC8057-H
OCR Text ... 842 18 150 -55 to 150 unit v a w w mj a note: using continuously under heavy loads (e.g. the application of high temperature/cur...static characteristics (t static characteristics (t static characteristics (t static characteristics...
Description Power MOSFET (N-ch single VDSS≤30V)

File Size 227.06K  /  9 Page

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    TOSHIBA
Part No. TK7S10N1Z
OCR Text ...6 7 8.4 175 -55 to 175 unit v a w mj a v/ns note: using continuously under heavy loads (e.g. the application of high temperature/...static characteristics (t static characteristics (t static characteristics (t static characteristics...
Description Power MOSFET (N-ch single 60V<VDSS≤150V)

File Size 239.71K  /  9 Page

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    TOSHIBA
Part No. TK10A60w5
OCR Text ...50 -55 to 150 2000 0.6 unit v a w mj a v n m note: using continuously under heavy loads (e.g. the application of high temperatur...static characteristics (t static characteristics (t static characteristics (t static characteristics...
Description Power MOSFET (N-ch 500V<VDSS≤700V)

File Size 239.38K  /  10 Page

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    MTB23C04J4

Cystech Electonics Corp.
Part No. MTB23C04J4
OCR Text ... (note2) 2.4 w p dsm total power dissipation (t a =70 ) (note2) 1.7 operating ju...static bv dss 40 - - v gs =0v, i d =250 a v gs(th) 1.0 1.6 2.5 v v ds =v gs , i d =250...
Description N & P-Channel Enhancement Mode Power MOSFET

File Size 294.05K  /  13 Page

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For w static Found Datasheets File :: 83588    Search Time::4.031ms    
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