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Nell Semiconductor Co., Ltd
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| Part No. |
NKT135-16a NKT135A
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| OCR Text |
...y dbc ceramic ai 2 3 o ) ? 3500 v rms isolating voltage ? industrial standard package ? high surge capability ? glass passivated chips ? / modules uses high voltage power thyristor diodes in two basic configurations ? simple mounting ? ul a... |
| Description |
Thyristor Diode and Thyristor / /Thyristor, 135A(New INT-A-PAK Power Modules)
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| File Size |
1,379.26K /
4 Page |
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List of Unclassifed Man...
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| Part No. |
v-10-1C24-T v-10-1C5-T v-10-3A4-T v-16-1A5 v-16-1C26
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| OCR Text |
v v miniature basic switch miniature basic switch that offers high reliability and security wide variation of best-selling microswitches ...16a act ua tor te r m i n a l s cont a ct form m a xim u m oper a ting force (of) pin pl u nger s ol... |
| Description |
Miniature Basic Switch
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| File Size |
1,682.59K /
16 Page |
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it Online |
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SamHop Microelectronics...
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| Part No. |
STU314D
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| OCR Text |
v gs i dm e as w a p d c 10.4 -55 to 150 i d units parameter 30 16 47 vv 20 t c =25 c gate-source voltage drain-source voltage thermal char...16a 40 @ vgs=4.5v 28 @ vgs=10v dual enhancement mode field effect transistor (n and p chann el) abso... |
| Description |
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
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| File Size |
269.93K /
11 Page |
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it Online |
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Alpha & Omega Semicondu...
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| Part No. |
AON6413
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| OCR Text |
v ds i d (at v gs =-10v) -32a r ds(on) (at v gs =-10v) < 8.5m? r ds(on) (at v gs =-4.5v) < 17m? typical esd protection hbm c...16a v ds =0v, v gs =25v gate-body leakage current gate source charge turn-off delaytime turn-off fal... |
| Description |
30v P-Channel MOSFET
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| File Size |
330.48K /
6 Page |
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it Online |
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Price and Availability
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