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For typo Found Datasheets File :: 752 Search Time::2.547ms
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				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
Part No.	K4S643232H K4S643232H-TC_L60 K4S643232H-TC60 K4S643232H-TC_L50 K4S643232H-TC_L70 K4S643232H-TC55 K4S643232H-TL60 K4S643232H-TL70 K4S643232H-TC50 K4S643232H-TL55 K4S643232H-TC_L55 K4S643232H-TC70 K4S643232H-TL50 K4S643232H-TC/L50 K4S643232H-TC/L55 K4S643232H-TC/L60 K4S643232H-TC/L70 K4S643232H-TC550 K4S643232H-TC60T
OCR Text	....1 (December, 2003) - Corrected typo. Revision 1.2 (December, 2003) - Modified load cap 50pF -> 30pF & typo. Revision 1.3 (February, 2004) - Corrected typo. Revision 1.4 (August, 2004) - Corrected typo. CMOS SDRAM -2- Rev. 1.4 Augu...
Description	2M X 32 SYNCHRONOUS DRAM, 5 ns, PDSO86 64Mb H-die (x32) SDRAM Specification 64芯片（X32号）内存规格
File Size	116.12K / 12 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K4D261638E K4D261638E-TC40 K4D261638E-TC33 K4D261638E-TC36 K4D261638E-TC50 K4D261638E-TC2A K4D261638E-TC2A0
OCR Text	...ember 3, 2002) - Target Spec * typo corrected Revision 0.2 (November 12, 2002) - Target Spec * Changed tPDEX of K4D261638E-TC33/36/40/50 from 1tCK+tIS to 3tCK+tIS Revision 0.1 (November 7, 2002) - Target Spec * Changed tCK(max) of ...
Description	2M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM 200万16 × 4，银行双数据速率同步DRAM
File Size	213.19K / 16 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor]
Part No.	K4J52324QC K4J52324QC-BJ14 K4J52324QC-BC14 K4J52324QC-BC16 K4J52324QC-BC20 K4J52324QC-BJ12
OCR Text	...November 11, 2004) * Corrected typo in boundary scan order table. 512M GDDR3 SDRAM Revision 0.8 (October 10, 2004) * Changed part number from K4J52324QB-G to K4J52324QC-B -Package code attribute re-defined : G .... 144FBGA, Leaded ...
Description	512Mbit GDDR3 SDRAM
File Size	1,242.61K / 57 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	M464S1724ETSNBSP M464S0924E M464S0924ETS M464S0924ETS-C7A M464S0924ETS-CL7A M464S1724FTS M464S1724ETS M464S1724ETS-C7A M464S1724ETS-CL7A
OCR Text	...sion 1.2 (June. 2003) - Correct typo. Revision 1.3 (February. 2004) - Correct typo. Revision 1.4 (March. 2004) - Corrected package dimension. SDRAM Rev. 1.4 March. 2004 64MB, 128MB Unbuffered SODIMM 144Pin Unbuffered DIMM based on...
Description	64MB / 128MB Unbuffered SODIMM 64MB 128MB Unbuffered SODIMM 64MB, 128MB Unbuffered SODIMM
File Size	296.14K / 15 Page	View it Online	Download Datasheet

				Philips Semiconductors
Part No.	TDA5240 TDA5240T
OCR Text	...ge and temperature ranges MIN. typo 18 SYMBOL Vp IUM Vo PARAMETER supply voltage range (note 1) MAX. UNIT 4 0.6 0.85 0.93 + Lower transistor) current limiting output voltage at 10 = 100 mA(Upper 1 1.05 ~ ...
Description	Brushless DC motor drive circuit
File Size	3,388.75K / 19 Page	View it Online	Download Datasheet

				pmc
Part No.	1990864
OCR Text	...xGetHssLnkRxCounts: There was a typo in reading the counter register VTX_RX_HSS_CELL_LSB1 2. Fixed byte order of (VPI, VCI) and AAL5 packet length in ATM cells in the sample code (see file vtx_test.c) PROPRIETARY AND CONFIDENTIAL TO PMC-...
Description	From old datasheet system
File Size	412.60K / 7 Page	View it Online	Download Datasheet

				A-DATA[A-Data Technology] ADATA Technology Co., Ltd.
Part No.	ADD8616A8A VDD8608A8A-75BA VDD8608A8A ADD8616A8A-75BA
OCR Text	... AC Characteristics. 4. Changed typo size on module PCB in package dimensions. Rev 2 April, 2002 1 A-Data Double Data Rate SDRAM General Description The ADD8616A8A are four-bank Double Data Rate(DDR) Synchronous DRAMs organized a...
Description	DOUBLE DATA RATE SDRAM From old datasheet system DOUBLE DATA RATE SDRAM 双倍数据速率SDRAM内存
File Size	206.40K / 9 Page	View it Online	Download Datasheet

				Motorola
Part No.	MC9S12H256 9S12H256BDGV1
OCR Text	...P disabled) to 400A - Corrected typo in Figure 2-1 pin 76: PK3 -> PK2 - Added tEXTR and tEXTF to Oscillator Characteristics - Added typ value for tUPOSC - Corrected tEXTL and tEXTH values - Updated thermal resistances as per Thermal Simulat...
Description	Device User Guide From old datasheet system
File Size	589.58K / 124 Page	View it Online	Download Datasheet

				pmc
Part No.	1990553
OCR Text	...ault state when not being used. typo to INSRST corrected. Direction of OBCIF, IBCIF clocks in figures 5,6,7,8 corrected. INSRDY documentation corrected to say that INSRDY stays high until a full cell has been written in. Halfsecclk input pi...
Description	From old datasheet system
File Size	2,240.84K / 432 Page	View it Online	Download Datasheet

				Electronic Theatre Controls, Inc. ICSI Integrated Circuit Solution Inc
Part No.	IC61C1024L IC61C1024 IC61C1024L-12HI IC61C1024L-15H IC61C1024L-15J IC61C1024L-15JI IC61C1024L-15K IC61C1024L-15KI IC61C1024L-15T IC61C1024L-15TI IC61C1024-25H IC61C1024-25HI IC61C1024-25J IC61C1024-25JI IC61C1024-25K IC61C1024L-20H IC61C1024L-20J IC61C1024L-20JI IC61C1024L-20K IC61C1024L-20KI IC61C1024L-20T IC61C1024L-20TI IC61C1024L-25H IC61C1024L-25J IC61C1024L-25JI IC61C1024L-25K IC61C1024L-25KI IC61C1024L-25T IC61C1024L-25TI IC61C1024-20JI IC61C1024-12K IC61C1024-12KI IC61C1024-12TI IC61C1024-15J IC61C1024-15JI IC61C1024-15TI IC61C1024-20K IC61C1024-20KI IC61C1024-15H IC61C1024-15HI IC61C1024-20H IC61C1024-20HI IC61C1024-20T IC61C1024-20TI IC61C1024-12HI IC61C1024-12J IC61C1024-12JI IC61C1024-25TI IC61C1024-15KI IC61C1024-12H IC61C1024-15K IC61C1024-15T
OCR Text	... History Initial Draft Revise typo on page 6 and page 8 Draft Date March 13,2001 October 18,2001 Remark The attached datasheets are provided by ICSI. Integrated Circuit Solution Inc reserve the right to change the specifications...
Description	128K x 8 HIGH-SPEED CMOS STATIC RAM 128K的8高速CMOS静态RAM GT 12C 12#12 PIN RECP WALL RM 128K的8高速CMOS静态RAM RES CH 68.1 EW 1% ASYNCHRONOUS STATIC RAM, High Speed A.SRAM
File Size	169.94K / 11 Page	View it Online	Download Datasheet

For typo Found Datasheets File :: 752 Search Time::2.547ms
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