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飞思卡尔半导体(中国)有限公司
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| Part No. |
100B0R3BW 100B8R2CW
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| OCR Text |
...ide flag is source terminal for transistors. v rd1 v rg1 v rd1 v rg1 1. refer to an1987, quiescent current control for the rf integrated ci...ldmos wideband integrated power amplifiers case 1329 - 09 to - 272 wb - 16 plastic mw4ic2230nbr1 mw4... |
| Description |
RF LDMOS Wideband Integrated Power Amplifiers 射频LDMOS宽带集成功率放大
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| File Size |
702.41K /
16 Page |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MW6IC2015NBR1 MW6IC2015GNBR1
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| OCR Text |
...ide flag is source terminal for transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
(c) Freescale Semiconduct...LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revis... |
| Description |
RF LDMOS Wideband Integrated Power Amplifiers
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| File Size |
1,114.00K /
28 Page |
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Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
Freescale (Motorola)
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| Part No. |
MW5IC2030MBR1 MW5IC2030GMBR1
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| OCR Text |
...ide flag is source terminal for transistors.
Functional Block Diagram
(1) Refer to AN1987/D, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.motorola.com/semiconductors/rf . Select Documentation... |
| Description |
RF LDMOS Wideband Integrated Power Amplifiers 1930 MHz - 1990 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
1930–1990 MHz, 30 W, 26 V GSM/GSM EDGE, W–CDMA, PHS RF LDMOS Wideband Integrated Power Amplifier
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| File Size |
621.66K /
12 Page |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MW4IC915NBR1_06 MW4IC915GNBR1 MW4IC915GNBR1_06 MW4IC915NBR1
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| OCR Text |
...ide flag is source terminal for transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1987/D, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/r... |
| Description |
RF LDMOS Wideband Integrated Power Amplifiers
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| File Size |
678.09K /
20 Page |
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it Online |
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Freescale (Motorola)
MOTOROLA[Motorola, Inc]
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| Part No. |
MW4IC2020 MW4IC2020D MW4IC2020GMBR1 MW4IC2020MBR1
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| OCR Text |
...onal Block Diagram terminal for transistors. (1) Refer to AN1987/D, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.motorola.com/semiconductors/rf . Select Documentation/Application Notes - AN1987.
R... |
| Description |
GSM/GSM EDGE, CDMA 1.805–1.99 GHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifier
MW4IC2020MBR1, MW4IC2020GMBR1 GSM/GSM EDGE, CDMA, 1805-1990 MHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifiers
RF LDMOS Wideband Integrated Power Amplifiers
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| File Size |
579.33K /
12 Page |
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SGS Thomson Microelectronics
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| Part No. |
AN1226
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| OCR Text |
...f the gate to form two separate transistors with a common drain region. the depletion regions
an1226 - application note 3/4 p+ substrate s...ldmos is the characteristic of the source connection to the outside world. the source of a dmos is l... |
| Description |
UNDERSTANDING LDMOS DEVICE FUNDAMENTALS
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| File Size |
38.53K /
4 Page |
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it Online |
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Price and Availability
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