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IR03909 D3804X EF9345 G1047 BZT11HSB PEB2086N 0A568 AON6524
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  tch Datasheet PDF File

For tch Found Datasheets File :: 14226    Search Time::2.125ms    
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    2SJ400

SANYO[Sanyo Semicon Device]
Part No. 2SJ400
OCR Text ...ture Symbol VDSS VGSS ID IDP PD tch Tstg PW10s, duty cycle1% Tc=25C Conditions Ratings -30 20 -35 -140 1.65 70 150 -55 to +150 Unit V V A A W W C C Electrical Characteristics at Ta = 25C Parameter Drain-to-Source Breakdown Vo...
Description P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications

File Size 41.78K  /  4 Page

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    2SJ409 2SJ409L 2SJ409S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ409 2SJ409L 2SJ409S
OCR Text ...S VGSS ID I D(pulse)* I DR Pch* tch Tstg 2 1 Ratings -100 20 -20 -80 -20 75 150 -55 to +150 Unit V V A A A W C C 2 2SJ409(L), 2SJ409(S) Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to sour...
Description    Silicon P-Channel MOS FET
Power switching MOSFET

File Size 28.01K  /  5 Page

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    2SJ410

HITACHI[Hitachi Semiconductor]
Part No. 2SJ410
OCR Text ...S VGSS ID I D(pulse)* I DR Pch* tch Tstg 2 1 Ratings -200 20 -6 -24 -6 30 150 -55 to +150 Unit V V A A A W C C 2 2SJ410 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown vol...
Description    Silicon P-Channel MOS FET

File Size 29.02K  /  6 Page

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    2SJ411 D11219EJ1V0DS00

NEC[NEC]
Part No. 2SJ411 D11219EJ1V0DS00
OCR Text ... Storage Temperature PT1 PT2 tch Tstg -55 to +150 The internal diode connected between the gate and source of this product is to protect the product from static electricity. If the product is used in a circuit where the rated volta...
Description    P-CHANNEL SIGNAL MOS FET FOR SWItchING
From old datasheet system

File Size 67.31K  /  6 Page

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    2SJ413

SANYO[Sanyo Semicon Device]
Part No. 2SJ413
OCR Text ...ture Symbol VDSS VGSS ID IDP PD tch Tstg PW10s, duty cycle1% Tc=25C 5.45 5.45 Conditions Ratings -60 20 -50 -200 3.0 70 150 -55 to +150 2.0 1 : Gate 2 : Drain 3 : Source SANYO : TO-3PML Unit V V A A W W C C Electri...
Description Ultrahigh-Speed Switching Applications

File Size 78.32K  /  4 Page

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    2SJ418

SANYO[Sanyo Semicon Device]
Part No. 2SJ418
OCR Text ...ture Symbol VDSS VGSS ID IDP PD tch Tstg PW10s, duty cycle1% Tc=25C Conditions Ratings -30 20 -8 -32 1.0 30 150 -55 to +150 Unit V V A A W W C C Electrical Characteristics at Ta = 25C Parameter Drain-to-Source Breakdown Volta...
Description Ultrahigh-Speed Switching Applications

File Size 126.59K  /  4 Page

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    2SJ424

SANKEN[Sanken electric]
Part No. 2SJ424
OCR Text tch Tstg Ratings -60 20 5 150C) (Ta = 25C) External dimensions 1 ...... FM20 Electrical Characteristics Symbol V(BR) DSS IGSS IDSS VTH Re (yfs) RDS (on) Ciss Coss t on toff -2.0 1.0 1.6 0.35 270 170 75 35 0.5 min -60 500 Ratings ty...
Description MOSFET

File Size 23.37K  /  1 Page

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    2SJ425

SANKEN[Sanken electric]
Part No. 2SJ425
OCR Text tch Tstg Ratings -60 20 8 150C) (Ta = 25C) External dimensions 1 ...... FM20 Electrical Characteristics Symbol V(BR) DSS IGSS IDSS VTH Re (yfs) RDS (on) Ciss Coss t on toff -2.0 1.8 2.8 0.2 580 360 90 45 0.28 min -60 500 Ratings ty...
Description MOSFET

File Size 33.23K  /  1 Page

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    2SJ448

NEC[NEC]
Part No. 2SJ448
OCR Text ...y** * PW 10 s, Duty Cycle 1 % tch Tstg IAS EAS 30 2.0 150 -4.0 80 1. Gate 2. Drain 3. Source -55 to +150 C A mJ MP-45F(ISOLATED TO-220) Drain ** Starting tch = 25 C, RG = 25 , VGS = -20 V 0 Gate Body Diode Gate P...
Description SWItchING P-CHANNEL POWER MOS FET INDUSTRIAL USE

File Size 117.41K  /  8 Page

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    2SJ449 2SJ449JM

NEC[NEC]
Part No. 2SJ449 2SJ449JM
OCR Text ...y** * PW 10 s, Duty Cycle 1 % tch Tstg IAS EAS 35 2.0 150 -6.0 180 -55 to +150 C 123 1. Gate 2. Drain 3. Source MP-45F(ISOLATED TO-220) Drain ** Starting tch = 25 C, RG = 25 , VGS = -20 V 0 Gate Body Diode Sourc...
Description Pch vertical DMOS FET MP-45F
SWItchING P-CHANNEL POWER MOS FET INDUSTRIAL USE

File Size 116.80K  /  8 Page

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For tch Found Datasheets File :: 14226    Search Time::2.125ms    
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