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  switch-h Datasheet PDF File

For switch-h Found Datasheets File :: 45209    Search Time::2.25ms    
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    TPC8062-H

Toshiba Semiconductor
Part No. TPC8062-H
OCR Text ...charge 1 gate-drain charge gate switch charge symbol q g q gs1 q gd q sw test condition v dd 24 v, v gs = 10 v, i d = 18 a v dd 24...h 4 7. 7. 7. 7. marking(note) marking(note) marking(note) marking(note) fig. fig. fig. fig. ...
Description MOSFETs Silicon N-Channel MOS (U-MOS-H)
   MOSFETs Silicon N-Channel MOS (U-MOS-H)

File Size 224.53K  /  9 Page

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    TOSHIBA
Part No. TPC6109-H
OCR Text ...?) charge q gd ? 3.6 ? gate switch charge q sw v dd ?24 v, v gs = ?10 v, i d = ?5 a ? 4.8 ? nc source-drain ratings and ...h 2010-02-01 4 10 100 1000 ? 0.1 ? 1 ? 10 v gs = ? 10 v ? 4.5 v 0.1 1 10 ? 0.1 ? 10 ...
Description Power MOSFET (P-ch single)

File Size 277.93K  /  7 Page

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    TPC6109-H

Toshiba Semiconductor
Part No. TPC6109-H
OCR Text ...?) charge q gd ? 3.6 ? gate switch charge q sw v dd ?24 v, v gs = ?10 v, i d = ?5 a ? 4.8 ? nc source-drain ratings and ...h 2010-02-01 4 10 100 1000 ? 0.1 ? 1 ? 10 v gs = ? 10 v ? 4.5 v 0.1 1 10 ? 0.1 ? 10 ...
Description TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (Ultra-High-Speed U-MOSIII)

File Size 267.35K  /  7 Page

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    TPCA8027-H

Toshiba Semiconductor
Part No. TPCA8027-H
OCR Text ...?) charge q gd ? 5.2 ? gate switch charge q sw v dd 32 v, v gs = 10 v, i d = 30 a ? 8.1 ? nc source-drain ratings and charac...h 2008-06-26 4 10 100 1 0.1 1 10 100 1 10 100 1 100 25 100 tc = ? 55 c 10 0 1.0 0.2 0...
Description Field Effect Transistor

File Size 214.85K  /  7 Page

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    TPCA8A11-H

Toshiba Semiconductor
Part No. TPCA8A11-H
OCR Text ...charge 1 gate-drain charge gate switch charge symbol q g q gs1 q gd q sw test condition v dd 24 v, v gs = 10 v, i d = 35 a v dd 24...h 4 7. 7. 7. 7. marking marking marking marking fig. fig. fig. fig. 7.1 7.1 7.1 7.1 marking ...
Description MOSFETs

File Size 254.22K  /  10 Page

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    Toshiba
Part No. TPCC8062-H
OCR Text ...charge 1 gate-drain charge gate switch charge symbol q g q gs1 q gd q sw test condition v dd 24 v, v gs = 10 v, i d = 27 a v dd 24...h 4 7. 7. 7. 7. marking marking marking marking fig. fig. fig. fig. 7.1 7.1 7.1 7.1 marking ...
Description MOSFETs

File Size 416.88K  /  9 Page

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    TOSHIBA
Part No. TPCC8068-H
OCR Text ...charge 1 gate-drain charge gate switch charge symbol q g q gs1 q gd q sw test condition v dd 24 v, v gs = 10 v, i d = 13 a v dd 24...h 4 7. 7. 7. 7. marking marking marking marking fig. fig. fig. fig. 7.1 7.1 7.1 7.1 marking ...
Description Power MOSFET (N-ch single VDSS≤30V)

File Size 229.74K  /  9 Page

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    TOSHIBA
Part No. TPCC8067-H
OCR Text ...charge 1 gate-drain charge gate switch charge symbol q g q gs1 q gd q sw test condition v dd 24 v, v gs = 10 v, i d = 9 a v dd 24 ...h 4 7. 7. 7. 7. marking marking marking marking fig. fig. fig. fig. 7.1 7.1 7.1 7.1 marking ...
Description Power MOSFET (N-ch single VDSS≤30V)

File Size 236.46K  /  9 Page

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    TOSHIBA
Part No. TPCC8066-H
OCR Text ...charge 1 gate-drain charge gate switch charge symbol q g q gs1 q gd q sw test condition v dd 24 v, v gs = 10 v, i d = 11 a v dd 24...h 4 7. 7. 7. 7. marking marking marking marking fig. fig. fig. fig. 7.1 7.1 7.1 7.1 marking ...
Description Power MOSFET (N-ch single VDSS≤30V)

File Size 248.92K  /  9 Page

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