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IRF[International Rectifier]
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| Part No. |
IRHM7450SE
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| OCR Text |
...ese devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the SEE process utilizes International Rectifier's patented HEXFET tech... |
| Description |
TRANSISTOR N-CHANNEL(BVdss=500V, Rds(on)=0.51ohm, Id=12A)
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| File Size |
91.39K /
4 Page |
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IRF[International Rectifier]
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| Part No. |
IRHM7C50SE IRHM2C50SE
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| OCR Text |
...ese devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the SEE process utilizes International Rectifier's patented HEXFET tech... |
| Description |
TRANSISTOR N-CHANNEL(BVdss=600V, Rds(on)=0.60ohm, Id=10.4A)
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| File Size |
101.94K /
4 Page |
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it Online |
Download Datasheet |
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IRF[International Rectifier]
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| Part No. |
IRHM8230 IRHM7230
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| OCR Text |
...ese devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the RAD HARD process utilizes International Rectifier's patented HEXFET... |
| Description |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR
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| File Size |
295.92K /
12 Page |
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it Online |
Download Datasheet |
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IRF[International Rectifier]
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| Part No. |
IRHM9064
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| OCR Text |
...ese devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Single Event Effect (SEE) testing of International Rectifier P-Channel RAD HA... |
| Description |
TRANSISTOR P-CHANNEL(BVdss=-60V, Rds(on)=0.060ohm, Id=-35*A)
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| File Size |
101.13K /
4 Page |
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it Online |
Download Datasheet |
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IRF[International Rectifier]
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| Part No. |
IRHM9160
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| OCR Text |
...ese devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Single Event Effect, (SEE), testing of International Rectifier 's P-channel R... |
| Description |
TRANSISTOR P-CHANNEL(BVdss=-100V, Rds(on)=0.087ohm, Id=-35*A)
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| File Size |
87.31K /
4 Page |
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it Online |
Download Datasheet |
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IRF[International Rectifier]
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| Part No. |
IRHN7C50SE IRHN2C50SE
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| OCR Text |
...ese devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the SEE process utilizes International Rectifier's patented HEXFET tech... |
| Description |
TRANSISTOR N-CHANNEL(BVdss=600V, Rds(on)=0.60ohm, Id=10.4A)
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| File Size |
80.62K /
4 Page |
View
it Online |
Download Datasheet |
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IRF[International Rectifier]
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| Part No. |
IRHN8130 IRHN7130
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| OCR Text |
...n, these devices are capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Single Event Effect (SEE) testing of International Rectifier RAD HARD HEXFETs... |
| Description |
TRANSISTOR N-CHANNEL(BVdss=100V, Rds(on)=0.18ohm, Id=14)
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| File Size |
444.31K /
14 Page |
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it Online |
Download Datasheet |
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International Rectifier, Corp.
IRF[International Rectifier]
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| Part No. |
IRHN8230 IRHN7230
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| OCR Text |
...n, these devices are capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Single Event Effect (SEE) testing of International Rectifier RAD HARD HEXFETs... |
| Description |
TRANSISTOR N-CHANNEL(BVdss=200V, Rds(on)=0.40ohm, Id=9.0A) 晶体管N沟道（BVdss \u003d 200V的电压，的Rds（on）\u003d 0.40ohm，身份证\u003d 9.0,9.0
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| File Size |
450.04K /
14 Page |
View
it Online |
Download Datasheet |
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IRF[International Rectifier]
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| Part No. |
IRHN9130
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| OCR Text |
...ese devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Single Event Effect, (SEE), testing of International Rectifier 's P-channel R... |
| Description |
TRANSISTOR P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-11A)
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| File Size |
88.01K /
4 Page |
View
it Online |
Download Datasheet |
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IRF[International Rectifier]
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| Part No. |
IRHN9150
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| OCR Text |
...ese devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Single Event Effect, (SEE), testing of International Rectifier's P-channel RA... |
| Description |
TRANSISTOR P-CHANNEL(BVdss=-100V, Rds(on)=0.120ohm, Id=-22A)
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| File Size |
81.76K /
4 Page |
View
it Online |
Download Datasheet |
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