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    K4S560432E-NC75 K4S560832E-NC75 K4S560832E-NL75 K4S561632E K4S560432E-NC K4S560432E-NL75

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S560432E-NC75 K4S560832E-NC75 K4S560832E-NL75 K4S561632E K4S560432E-NC K4S560432E-NL75
OCR Text ...rogrammable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. Or...die (x4, x8 x8) Package Physical Dimension 54pin sTSOP(II)-300 CMOS SDRAM Units : Millimeter...
Description 256Mb E-die SDRAM Specification 54pin sTSOP-II 256Mb的电子芯片内存规4pin sTSOP -

File Size 180.64K  /  13 Page

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    SI6410DQ-T1-GE3

Vishay Siliconix
Part No. SI6410DQ-T1-GE3
OCR Text ...educes the power package to the same height as many resistors and capacitors in 0805 and 0605 sizes. it also allows placement on the ?pass...die tssop. notice that both sides of the package have source and drain connections, whereas little ...
Description N-Channel 30-V (D-S) MOSFET

File Size 191.33K  /  10 Page

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    TE Connectivity Ltd
Part No. 408-10051
OCR Text ...e stationary die and follow the same procedure used to crimp the first half of splice. 10. inspect the crimp according to section 5. figure 4 crimping splices with or without step--down adapter end of splice pointed toward topofyokeat appro...
Description Cumulative Trauma Disorders can result from the prolonged use ofmanually powered hand tools.

File Size 178.63K  /  7 Page

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    K4S560432E-TC K4S560432E-TC75 K4S561632E-TL75 K4S560432E-TL75 K4S560832E-TC75 K4S560832E-TL75 K4S561632E K4S561632E-TC60

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Part No. K4S560432E-TC K4S560432E-TC75 K4S561632E-TL75 K4S560432E-TL75 K4S560832E-TC75 K4S560832E-TL75 K4S561632E K4S561632E-TC60 K4S561632E-TC75 K4S561632E-TL60
OCR Text ...rogrammable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications. Or...die (x4, x8, x16) Package Physical Dimension CMOS SDRAM 0~8C 0.25 TYP 0.010 #54 #28 0.45~0.75...
Description 256Mb E-die SDRAM Specification 256Mb的电子芯片内存规

File Size 194.54K  /  14 Page

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    Diodes
Part No. DMC4040SSDQ
OCR Text ...ically and thermally the same, except where specified. for more information, pl ease refer to http://www.diodes.c om/quality/product_...die. 10. for a device with two active die running at equal power. 11. thermal resistance from jun...
Description 40V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

File Size 267.36K  /  11 Page

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    DMP4050SSD-15 DMP4050SSDQ-13

Diodes Incorporated
Part No. DMP4050SSD-15 DMP4050SSDQ-13
OCR Text ...a steady-state condition. 7. same as note (3), except the device is measured at t ? 10 sec. 8. same as note (3), except the device i...die. 10. for a device with two active die running at equal power. 11. thermal resistance from...
Description 40V DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

File Size 169.01K  /  8 Page

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