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    TOSHIBA
Part No. TPC8056-H
OCR Text ...ure storage temperature (t = 10 s) (t = 10 s) (note 1) (note 1) (note 2) (note 3) (note 4) symbol v dss v gss i d i dp p d p d e as i ar t c...h 2 5. 5. 5. 5. thermal characteristics thermal characteristics thermal characteristics thermal ...
Description Power MOSFET (N-ch single VDSS≤30V)

File Size 225.10K  /  9 Page

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    TOSHIBA
Part No. TPC8048-H
OCR Text ...nsfer admittance: |y fs | = 60 s (typ.) ? low leakage current: i dss = 10 a (max) (v ds = 60 v) ? enhancement mode: v th = 1.3...h 2013-11-01 2 thermal characteristics characteristic symbol max unit thermal resistance, chann...
Description Power MOSFET (N-ch single 30V<VDSS≤60V)

File Size 202.35K  /  7 Page

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    TOSHIBA
Part No. TPC8038-H
OCR Text ...ansfer admittance: |y fs | = 36 s (typ.) ? low leakage current: i dss = 10 a (max) (v ds = 30 v) ? enhancement mode: v th = 1.5 to ...h 2008-07-04 2 thermal characteristics characteristic symbol max unit thermal resistance, chann...
Description Power MOSFET (N-ch single VDSS≤30V)

File Size 229.96K  /  7 Page

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    TOSHIBA
Part No. TPC8229-H
OCR Text ...ure storage temperature (t = 10 s) (t = 10 s) (t = 10 s) (t = 10 s) (note 1) (note 1) (note 2), (note 4) (note 2), (note 5) (note 3), (note ...h 3 6. 6. 6. 6. electrical characteristics electrical characteristics electrical characteristics...
Description Power MOSFET (N-ch dual)

File Size 257.33K  /  9 Page

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    TOSHIBA
Part No. TPC8063-H
OCR Text ...ure storage temperature (t = 10 s) (t = 10 s) (note 1) (note 1) (note 2) (note 3) (note 4) symbol v dss v gss i d i dp p d p d e as i ar t c...h 2 5. 5. 5. 5. thermal characteristics thermal characteristics thermal characteristics thermal ...
Description Power MOSFET (N-ch single VDSS≤30V)

File Size 224.55K  /  9 Page

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    TPC8062-H

Toshiba Semiconductor
Part No. TPC8062-H
OCR Text ...ure storage temperature (t = 10 s) (t = 10 s) (note 1) (note 1) (note 2) (note 3) (note 4) symbol v dss v gss i d i dp p d p d e as i...h 2 5. 5. 5. 5. thermal characteristics thermal characteristics thermal characteristics thermal ...
Description MOSFETs Silicon N-Channel MOS (U-MOs-h)
   MOSFETs Silicon N-Channel MOS (U-MOs-h)

File Size 224.53K  /  9 Page

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    TOSHIBA
Part No. TPC6109-H
OCR Text ...nsfer admittance: |y fs | = 8.0 s (typ.) ? low leakage current: i dss = ? 10 a (max) (v ds = ? 30 v) ? enhancement mode: v th = ...h 2010-02-01 2 marking (note 5) note 1: ensure that the channel temperature do...
Description Power MOSFET (P-ch single)

File Size 277.93K  /  7 Page

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    TPC6109-H

Toshiba Semiconductor
Part No. TPC6109-H
OCR Text ...nsfer admittance: |y fs | = 8.0 s (typ.) ? low leakage current: i dss = ? 10 a (max) (v ds = ? 30 v) ? enhancement mode: v th = ...h 2010-02-01 2 marking (note 5) note 1: ensure that the channel temperature do...
Description TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (Ultra-High-Speed U-MOSIII)

File Size 267.35K  /  7 Page

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    TPC8040-H

Toshiba Semiconductor
Part No. TPC8040-H
OCR Text ...transfer admittance: |Yfs| = 45 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 ...H Thermal Characteristics Characteristic Thermal resistance, channel to ambient (t = 10 s) (Note 2...
Description Field Effect Transistor Silicon N-Channel MOS Type (U-MOS?H)
Field Effect Transistor Silicon N-Channel MOS Type (U-MOS楼碌-H)

File Size 218.07K  /  7 Page

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    A1035-H

Vincotech
Part No. A1035-H
OCR Text s answer to the most critical requirements in the GPS market: High performance, new features and lowest costs. The complete GPS antenna modu...H Back-up battery option Internal antenna supply A1080-A A1080-B A1082-A A1084-A A1084-B A1...
Description Cost-efficient and complete-an SMT GPS antenna module

File Size 134.10K  /  2 Page

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