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  rg-142 Datasheet PDF File

For rg-142 Found Datasheets File :: 761    Search Time::4.953ms    
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    STMicro
Part No. TDA7384A 4060
OCR Text ...ERISTICS (VS = 14.4V; f = 1KHz; Rg = 600; RL = 4; Tamb = 25C; Refer to the test and application diagram, unless otherwise specified.) Symbo...142 0.880 0.762 0.626 0.313 0.169 0.173 20 45 Flexiwatt25 V3 H3 O H H1 H2 R3 R4 A ...
Description 4 x 35W QUAD BRIDGE CAR RADIO AMPLIFIER
From old datasheet system

File Size 302.49K  /  9 Page

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    ONSEMI[ON Semiconductor]
Part No. NTF3055-160T1 NTF3055-160T3 NTF3055-160T3LF NTF3055-160 NTF3055-160-D
OCR Text ...ID = 2.0 Adc, VGS = 10 Vdc, Vdc RG = 9.1 ) (Note 3.) td(on) tr td(off) tf QT Q1 Q2 - - - - - - - 9.2 9.2 16 9.2 6.9 1.4 3.0 20 20 40 20 14 - - nC ns SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage (IS = 2.0 Adc, VGS = 0 Vdc) (IS =...
Description TRANSISTOR|MOSFET|N-CHANNEL|60VV(BR)DSS|2AI(D)|SOT-223
From old datasheet system
Power MOSFET 2.0 Amps, 60 Volts N?Channel SOT23(2A,60V逻辑电平,N通道,SOT-223封装的功率MOSFET)
Power MOSFET 2.0 Amps, 60 Volts N-Channel SOT-223 2 A, 60 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261

File Size 58.35K  /  8 Page

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    NEZ7785-15D NEZ4450-15D NEZ4450-15DD NEZ3642-15D NEZ3642-15DD NEZ6472-15D NEZ5964-15D NEZ5964-15DD NEZ6472-15DD

NEC, Corp.
NEC Corp.
NEC[NEC]
Part No. NEZ7785-15D NEZ4450-15D NEZ4450-15DD NEZ3642-15D NEZ3642-15DD NEZ6472-15D NEZ5964-15D NEZ5964-15DD NEZ6472-15DD
OCR Text ...evel) MAXIMUM OPERATING LIMITS Rg max. () 50 VDS max. (V) 10 Rg max is the maximum series resistance between the gate supply and the FET...142.4 -170.7 162.4 137.3 113.5 89.3 59.2 30.7 -12.2 -62.8 -109.7 -149.4 176.1 145.1 115.5 84.8 50.6 ...
Description 20 characters x 4 Lines, 5x7 Dot Matric Character and Cursor 15瓦C波段砷化镓场效应管N沟道砷化镓场效应晶体
15 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

File Size 67.49K  /  12 Page

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    ST Microelectronics
意法半导
STMicro
Part No. TDA7250
OCR Text ... dB dB f = 100 Hz f = 10 kHz RG = 600 B = 20 Hz to 20 kHz Vopp Po Output Voltage Swing Output Power (*) Io SVR Cs Output Cur...142/TIP147 GV = 1 + R1/R2 6/11 TDA7250 Figure 2 : Output Power vs. Supply Voltage. Figure 3 :...
Description 6W AUDIO AMPLIFIER WITH STAND-BY
6W Hi-Fi Audio Amplifier(6W Hi-Fi双音频放大器)
60 W HI-FI DUAL AUDIO DRIVER

File Size 134.37K  /  11 Page

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    UPA651TT UPA651TT-E1 UPA651TT-E2

NEC Corp.
Part No. UPA651TT UPA651TT-E1 UPA651TT-E2
OCR Text ...-10 V, ID = -2.5 A VGS = -4.0 V RG = 10 MIN. TYP. MAX. UNIT -10 m10 -0.45 4.0 55 66 85 600 120 75 45 200 435 345 5.5 1.2 2.1 0.94 69 88 142 A A V S m m m pF pF pF ns ns ns ns nC nC nC V -1.5 TEST CIRCUIT 1 SWITCHING TIME T...
Description P-channel enhancement type MOS FET
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

File Size 73.18K  /  8 Page

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    AO4406

Alpha Industries
Part No. AO4406
OCR Text ...iss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn...
Description N CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

File Size 166.40K  /  7 Page

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    BCR5AM-12 BCR5AM-12L BCR5AM-8 BCR5AM-8L BCR5AM

POWEREX[Powerex Power Semiconductors]
Part No. BCR5AM-12 BCR5AM-12L BCR5AM-8 BCR5AM-8L BCR5AM
OCR Text ...Conditions (Trigger Mode) VD RL RG Tj Min. BCR5AM Typ. Max. Units T-11 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (412) 925-7272 BCR5AM Triac 5 Amperes/400-600 Volts Characteristics Thermal Resistance, Jun...
Description Triac 5 Amperes/400-600 Volts

File Size 79.47K  /  6 Page

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    MGP11N60ED

ON Semiconductor
Part No. MGP11N60ED
OCR Text ...0 Vdc, VGE = 15 Vdc, TJ = 125C, RG = 20 ) Thermal Resistance -- Junction to Case - IGBT -- Junction to Case - Diode -- Junction to Ambient M...142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 ...
Description SHORT CIRCUIT RATED LOW ON-VOLTAGE

File Size 110.32K  /  6 Page

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    MGP11N60E

Motorola, Inc
Part No. MGP11N60E
OCR Text ...0 Vdc, VGE = 15 Vdc, TJ = 125C, RG = 20 ) Thermal Resistance -- Junction to Case - IGBT -- Junction to Ambient Maximum Lead Temperature for ...142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 ...
Description Insulated Gate Bipolar Transistor

File Size 93.72K  /  6 Page

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