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International Rectifier
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| Part No. |
IRF1407
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| OCR Text |
...V VGS = 10VT VDD = 38V ID = 78A rg = 2.5 VGS = 10V T D Between lead, 6mm (0.25in.) G from package and center of die contact S VGS = 0V VDS = 25V = 1.0KHz, See Fig. 5 VGS = 0V, VDS = 1.0V, = 1.0KHz VGS = 0V, VDS = 60V, = 1.0KHz VGS = 0V, ... |
| Description |
Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A?
Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A?)
POWER MOSFET(VDSS=75V, RDS(ON)=0.0078OHM, ID=130Aㄌ)
Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A)
Power MOSFET(Vdss=75V/ Rds(on)=0.0078ohm/ Id=130A)
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| File Size |
126.10K /
9 Page |
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International Rectifier
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| Part No. |
IRF1704
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| OCR Text |
... VDD = 20V --- ID = 100A ns --- rg = 2.5 --- VGS = 10V,See Fig. 10 D Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact S --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz, See Fig. 5 --- VGS = 0V, V DS = 1.0V, = 1.... |
| Description |
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A?
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A??
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A)
POWER MOSFET(VDSS=40V, RDS(ON)=0.004OHM, ID=170Aㄌ)
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A?)
Power MOSFET(Vdss=40V/ Rds(on)=0.004ohm/ Id=170A)
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| File Size |
100.05K /
8 Page |
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STMicroelectronics
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| Part No. |
STD12NM50ND STB12NM50ND
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| OCR Text |
... A VGS = 10 V (see Figure 3)
rg
TBD
Qg Qgs Qgd
1.
Total gate charge Gate-source charge Gate-drain charge
TBD TBD TBD
nC nC nC
Pulsed: pulse duration = 300 s, duty cycle 1.5%
2. Coss eq. is defined as a constant ... |
| Description |
N-channel 500 V, 0.29 楼?, 11 A, FDmesh垄芒 II Power MOSFET (with fast diode), D2PAK, DPAK
N-channel 500 V, 0.29 Ω, 11 A, FDmesh?/a> II Power MOSFET (with fast diode), D2PAK, DPAK
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| File Size |
565.12K /
13 Page |
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HARRIS SEMICONDUCTOR
INTERSIL[Intersil Corporation]
Intersil, Corp.
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| Part No. |
IRF234 IRF235 IRF236 IRF237
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| OCR Text |
...igure 12) VDD = 125V, ID 8.1A, rg = 12, RL = 1.1 VGS = 10V, (Figures 17, 18) MOSFET Switching Times are Essentially Independent of Operating Temperature 2.9 -
0.32 0.48 4.3 9.1 23 31 19 24
0.45 0.68 14 35 47 29 35
S ns ns ns ns ... |
| Description |
8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs
8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs 6.5 A, 275 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
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| File Size |
68.51K /
7 Page |
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SemeLAB
SEME-LAB[Seme LAB]
Air Cost Control
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| Part No. |
IRF240SMD
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| OCR Text |
... 2% 2) @ VDD = 50V , L 1.5mH , rg = 25W , Peak IL = 22A , Starting TJ = 25C 3) @ ISD 13.9A , di/dt 150A/ms , VDD BVDSS , TJ 150C , SUGGESTED rg = 9.1W
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales... |
| Description |
N.CHANNEL POWER MOSFET
N-Channel Power MOSFET(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)) N沟道功率MOSFET（减振钢板基本：200伏，身份证（续）3.9A，的Rds（on）：0.18Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本00伏，身份证（续）3.9A时，RDS（对）：0.18Ω））
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| File Size |
22.29K /
2 Page |
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