nitride silicon pdf Datasheet P7 Full Text Search --- IC-ON-LINE


	Part Number	Hot Search : 2SK821 47M50 T041641 2SD2114K TAA761 HBD2C4N C5001BYB 0812C
	Product Description
	Full Text Search

nitride silicon Datasheet PDF File

For nitride silicon Found Datasheets File :: 1802 Search Time::4.281ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | <7> | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

				Ericsson Microelectronics ERICSSON[Ericsson]
Part No.	PTB20004
OCR Text	...applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot...silicon nitride Passivated Typical Output Power vs. Input Power 60 Output Power (Watts) 50...
Description	50 Watts, 860-900 MHz Cellular Radio RF Power Transistor 50 Watts/ 860-900 MHz Cellular Radio RF Power Transistor
File Size	46.81K / 3 Page	View it Online	Download Datasheet

				Ericsson Microelectronics ERICSSON[Ericsson]
Part No.	PTB20005
OCR Text	...applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot...silicon nitride Passivated Typical Output Power vs. Input Power 30 Output Power (Watts) 25...
Description	15 Watts 860-900 MHz Cellular Radio RF Power Transistor 15 Watts, 860-900 MHz Cellular Radio RF Power Transistor 15 Watts/ 860-900 MHz Cellular Radio RF Power Transistor
File Size	44.10K / 3 Page	View it Online	Download Datasheet

				Ericsson Microelectronics ERICSSON[Ericsson]
Part No.	PTB20006
OCR Text	...applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot...silicon nitride Passivated Typical Output Power vs. Input Power 12 Output Power (Watts) 10...
Description	4 Watts, 86000 MHz Cellular Radio RF Power Transistor 4 Watts, 860-900 MHz Cellular Radio RF Power Transistor 4 Watts/ 860-900 MHz Cellular Radio RF Power Transistor
File Size	44.52K / 3 Page	View it Online	Download Datasheet

				Ericsson Microelectronics ERICSSON[Ericsson]
Part No.	PTB20007
OCR Text	...applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot...silicon nitride Passivated Typical Output Power vs. Input Power 60 Output Power (Watts) 50...
Description	30 Watts, 93560 MHz Cellular Radio RF Power Transistor 30 Watts, 935-960 MHz Cellular Radio RF Power Transistor 30 Watts 935-960 MHz Cellular Radio RF Power Transistor
File Size	47.21K / 3 Page	View it Online	Download Datasheet

				Ericsson Microelectronics ERICSSON[Ericsson]
Part No.	PTB20008
OCR Text	...applications. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceabilit...silicon nitride Passivated Typical Output Power vs. Input Power 15.0 Output Power (Watts) ...
Description	10 Watts, 93560 MHz Cellular Radio RF Power Transistor 10 Watts, 935-960 MHz Cellular Radio RF Power Transistor 10 Watts 935-960 MHz Cellular Radio RF Power Transistor
File Size	43.78K / 3 Page	View it Online	Download Datasheet

				Ericsson Microelectronics ERICSSON[Ericsson] TriQuint Semiconductor, Inc.
Part No.	PTB20009
OCR Text	...applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot...silicon nitride Passivated Typical Output Power vs. Input Power 6 Output Power (Watts) 5 4...
Description	2.5 Watts, 93560 MHz Cellular Radio RF Power Transistor 2.5 Watts/ 935-960 MHz Cellular Radio RF Power Transistor 2.5 Watts, 935-960 MHz Cellular Radio RF Power Transistor 2.5瓦，935-960兆赫蜂窝无线电射频功率晶体管
File Size	38.88K / 2 Page	View it Online	Download Datasheet

				Ericsson Microelectronics ERICSSON[Ericsson]
Part No.	PTB20011
OCR Text	...applications. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceabilit...silicon nitride Passivated Typical Output Power vs. Input Power 30 25 20 15 Output Power (Wat...
Description	20 Watts P-Sync, 47060 MHz UHF TV Linear Power Transistor 20 Watts P-Sync, 470-860 MHz UHF TV Linear Power Transistor 20 Watts P-Sync 470-860 MHz UHF TV Linear Power Transistor
File Size	46.25K / 3 Page	View it Online	Download Datasheet

				Ericsson Microelectronics ERICSSON[Ericsson]
Part No.	PTB20017
OCR Text	...applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot...silicon nitride Passivated Typical Output Power vs. Input Power 240 Output Power (Watts) 2...
Description	150 Watts, 86000 MHz Cellular Radio RF Power Transistor 150 Watts, 860-900 MHz Cellular Radio RF Power Transistor 150 Watts 860-900 MHz Cellular Radio RF Power Transistor
File Size	44.06K / 3 Page	View it Online	Download Datasheet

				Ericsson Microelectronics ERICSSON[Ericsson]
Part No.	PTB20030
OCR Text	...applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot...silicon nitride Passivated Typical Output Power vs. Input Power 30 Output Power (Watts) 25...
Description	15 Watts, 42070 MHz RF Power Transistor 15 Watts, 420-470 MHz RF Power Transistor
File Size	44.12K / 3 Page	View it Online	Download Datasheet

				Ericsson Microelectronics ERICSSON[Ericsson]
Part No.	PTB20031
OCR Text	...applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot...silicon nitride Passivated Typical Output Power vs. Input Power 60 Output Power (Watts) 50...
Description	40 Watts, 42070 MHz RF Power Transistor 40 Watts, 420-470 MHz RF Power Transistor
File Size	44.46K / 2 Page	View it Online	Download Datasheet

For nitride silicon Found Datasheets File :: 1802 Search Time::4.281ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | <7> | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |