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n-die Datasheet PDF File

For n-die Found Datasheets File :: 23892 Search Time::1.531ms
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				IRF[International Rectifier]
Part No.	IRF5305
OCR Text	...howing the G integral reverse p-n junction diode. S TJ = 25C, IS = -16A, VGS = 0V TJ = 25C, IF = -16A di/dt = -100A/s Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD -16A, di/dt...
Description	Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)
File Size	120.44K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF530L IRF530NS IRF530NL
OCR Text	...integral reverse --- --- 60 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 9.0A, VGS = 0V --- 130 190 ns TJ = 25C, I F = 9.0A --- 650 970 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes:...
Description	Power MOSFET(Vdss=100V/ Rds(on)=0.11ohm/ Id=17A) HEXFET Power MOSFET Power MOSFET(Vdss=100V, Rds(on)=0.11ohm, Id=17A)
File Size	174.65K / 10 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	IRF530N
OCR Text	N-channel TrenchMOSTM transistor IRF530N FEATURES * 'Trench' technology * Low on-state resistance * Fast switching * Low thermal resi...die Measured from drain lead to centre of die (SOT78 package only) Measured from source lead to sour...
Description	N-channel TrenchMOS transistor(N沟道 TrenchMOS 晶体 N-channel TrenchMOS TM transistor
File Size	95.87K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7106 IRF7106TR
OCR Text	N-CHANNEL MOSFET 1 8 HEXFET (R) Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mou...die capability making it ideal in a variety of power applications. With these improvements, multiple...
Description	20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package Power MOSFET(Vdss= -20V)
File Size	157.44K / 7 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF840LCL IRF840LCS
OCR Text	...integral reverse 28 --- --- S p-n junction diode. --- --- 2.0 V TJ = 25C, IS = 8.0A, VGS = 0V --- 490 740 ns TJ = 25C, IF = 8.0A --- 3.0 4.5 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: ...
Description	Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A) 功率MOSFET（减振钢板基本\u003d 500V及的Rds（on）\u003d 0.85ohm，身份证\u003d 8.0A Power MOSFET(Vdss=500V Rds(on)=0.85ohm Id=8.0A)
File Size	169.91K / 10 Page	View it Online	Download Datasheet

				Samsung semiconductor International Rectifier Intersil Corporation
Part No.	IRF9150
OCR Text	... Showing the Integral Reverse P-N Junction Diode G D MIN - TYP - MAX -25 -100 UNITS A A S Source to Drain Diode Voltage(Note 2) Reverse Recovery Time Reverse Recovery Charge NOTES: VSD trr QRR TC = 25oC, ISD = 25A, ...
Description	-25A, -100V, 0.150 Ohm, P-Channel Power MOSFET
File Size	56.86K / 7 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF9410
OCR Text	...hnology Ultra Low On-Resistance N-Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated S S S G ...die capability making it ideal in a variety of power applications. With these improvements, multiple...
Description	Power MOSFET(Vdss=30V, Rds(on)=0.030ohm)
File Size	103.18K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9520NL IRF9520NS
OCR Text	... integral reverse --- --- -27 p-n junction diode. S --- --- -1.6 V TJ = 25C, IS = -4.0A, VGS = 0V --- 100 150 ns TJ = 25C, IF = -4.0A ___ 420 630 nC di/dt = -100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) ...
Description	Power MOSFET(Vdss=-100V/ Rds(on)=0.48ohm/ Id=-6.8A) Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A) Power MOSFET(Vdss=-100V Rds(on)=0.48ohm Id=-6.8A)
File Size	151.66K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9520N
OCR Text	... integral reverse --- --- -27 p-n junction diode. S --- --- -1.6 V TJ = 25C, IS = -4.0A, VGS = 0V --- 100 150 ns TJ = 25C, IF = -4.0A --- 420 630 nC di/dt = -100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) N...
Description	Power MOSFET(Vdss=-100V Rds(on)=0.48ohm Id=-6.8A) Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A)
File Size	91.94K / 8 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	IRF9520 FN2281
OCR Text	... Showing the Integral Reverse P-N Junction Diode G D MIN - TYP - MAX -6.0 -24 UNITS A A S Source to Drain Diode Voltage (Note 2) Reverse Recovery Time Reverse Recovery Charge NOTES: VSD trr QRR TC = 25oC, ISD = -6.0...
Description	6A, 100V, 0.600 Ohm, P-Channel Power MOSFET(6A, 100V, 0.600 惟, P娌?????MOS?烘?搴??) From old datasheet system 6A 100V 0.600 Ohm P-Channel Power MOSFET 6A/ 100V/ 0.600 Ohm/ P-Channel Power MOSFET
File Size	57.36K / 7 Page	View it Online	Download Datasheet

For n-die Found Datasheets File :: 23892 Search Time::1.531ms
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