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INTERSIL[Intersil Corporation]
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| Part No. |
HGTD1N120CNS FN4652 HGTP1N120CN
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| OCR Text |
...ns. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transis...1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Pro... |
| Description |
From old datasheet system
6.2A 1200V NPT Series N-Channel IGBT
6.2A, 1200V, NPT Series N-Channel IGBT
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| File Size |
76.20K /
7 Page |
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it Online |
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Intersil, Corp.
INTERSIL[Intersil Corporation]
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| Part No. |
HGT1S12N60B3DS HGTP12N60B3D HGTG12N60B3D FN4411
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| OCR Text |
...Hyperfast Diode
This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These...1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Pro... |
| Description |
27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode(27A, 600V, UFS系列带超快二极管 N沟道绝缘栅双极型晶体 27 A, 600 V, N-CHANNEL IGBT, TO-263AB
From old datasheet system
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| File Size |
116.56K /
7 Page |
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it Online |
Download Datasheet |
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INTERSIL[Intersil Corporation]
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| Part No. |
HGT1S12N60A4DS HGTP12N60A4D HGTG12N60A4D FN4697
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| OCR Text |
...12N60A4D and HGT1S12N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. The...1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Pro... |
| Description |
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
From old datasheet system
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| File Size |
352.20K /
8 Page |
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it Online |
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INTERSIL[Intersil Corporation]
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| Part No. |
HGT1S12N60C3DS HGTP12N60C3D FN4261
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| OCR Text |
...yperfast Diodes
This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. The d...1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Pro... |
| Description |
24 A, 600 V, N-CHANNEL IGBT, TO-263AB
From old datasheet system
24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
24A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
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| File Size |
98.36K /
7 Page |
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it Online |
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INTERSIL[Intersil Corporation]
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| Part No. |
HGT1S12N60C3S HGTP12N60C3 FN4040
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| OCR Text |
...TP12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. The...1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Pro... |
| Description |
24A/ 600V/ UFS Series N-Channel IGBTs
24A, 600V, UFS Series N-Channel IGBTs
From old datasheet system
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| File Size |
118.57K /
6 Page |
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it Online |
Download Datasheet |
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INTERSIL[Intersil Corporation]
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| Part No. |
HGT1S7N60B3DS HGTP7N60B3D FN4413
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| OCR Text |
...TP7N60B3D and HGT1S7N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. The...1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Pro... |
| Description |
14 A, 600 V, N-CHANNEL IGBT, TO-263AB
14A/ 600V/ UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode
3.3V 72-mc CPLD
14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode
From old datasheet system
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| File Size |
93.27K /
7 Page |
View
it Online |
Download Datasheet |
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Maxim
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| Part No. |
MAX1507
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| OCR Text |
...ates the current-sense circuit, MOS pass element, and thermal-regulation circuitry, and also eliminates the reverse-blocking Schottky diode ...1-Cell Li+ Battery Charger o No External FET, Reverse-Blocking Diode, or Current-Sense Resistor Requ... |
| Description |
Linear Li+ Battery Charger with Integrated Pass FET and Thermal Regulation in a 3mm x 3mm Thin DFN
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| File Size |
195.72K /
12 Page |
View
it Online |
Download Datasheet |
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Intersil, Corp.
INTERSIL[Intersil Corporation]
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| Part No. |
HGT1S7N60A4DS HGTP7N60A4D HGTG7N60A4D FN4827
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| OCR Text |
...TP7N60A4D and HGT1S7N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. The...1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Pro... |
| Description |
AML42 Series, Solid State Indicator, Square, Compact Style, Lighted, 1 LED, Snap in panel mount 34 A, 600 V, N-CHANNEL IGBT, TO-263AB
600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
600V SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
From old datasheet system
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| File Size |
91.22K /
8 Page |
View
it Online |
Download Datasheet |
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INTERSIL[Intersil Corporation]
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| Part No. |
HGT1S7N60C3DS HGTP7N60C3D FN4150
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| OCR Text |
...TP7N60C3D and HGT1S7N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. The...1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Pro... |
| Description |
From old datasheet system
14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
14A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
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| File Size |
175.01K /
7 Page |
View
it Online |
Download Datasheet |
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Maxim
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| Part No. |
MAX1508
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| OCR Text |
...ates the current-sense circuit, MOS pass element, and thermal-regulation circuitry, and also eliminates the reverse-blocking Schottky diode,...1-Cell Li+ Battery Charger o No External FET, Reverse-Blocking Diode, or Current-Sense Resistor Requ... |
| Description |
"Linear Li+ Battery Charger with Integrated Pass FET, Thermal Regulation, and ACOK-bar in 3mm x 3mm TDFN"
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| File Size |
190.36K /
11 Page |
View
it Online |
Download Datasheet |
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