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  mobile sdram Datasheet PDF File

For mobile sdram Found Datasheets File :: 1066    Search Time::2.203ms    
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    天津新技术产业园区管理委员会
INTEGRATED SILICON SOLUTION INC
Integrated Silicon Solu...
Part No. IS42SM32160C-75BLI IS42SM32160C-75BL-TR IS42SM32160C-75BLI-TR IS42RM32160C-75BL
OCR Text ...die revision: c 16mx32 512mb?mobile? synchronous?dram? description: issi's is42sm/rm32160c is a 512mb mobile syn- chronous dram confgured...sdram is internally con- fgured by stacking two 256mb, 16mx16 devices. each of the 4m x32 ba...
Description 16M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90
   512Mb mobile Synchronous DRAM

File Size 226.06K  /  17 Page

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    K4S56163LF K4S56163LF-F1H K4S56163LF-F1L K4S56163LF-F75 K4S56163LF-G K4S56163LF-L K4S56163LF-N K4S56163LF-XE K4S56163LF-

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S56163LF K4S56163LF-F1H K4S56163LF-F1L K4S56163LF-F75 K4S56163LF-G K4S56163LF-L K4S56163LF-N K4S56163LF-XE K4S56163LF-ZC750 K4S56163LF-ZE1L0 K4S56163LF-ZN1L0
OCR Text mobile sdram in 54BOC FEATURES * 2.5V power supply. * LVCMOS compatible with multiplexed address. * Four banks operation. * MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst ...
Description 16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
4M x 16Bit x 4 Banks mobile sdram in 54BOC 4米16 × 4银行4BOC移动sdram

File Size 112.21K  /  12 Page

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    K4S56163PF K4S56163PF-F1L K4S56163PF-F90 K4S56163PF-RG K4S56163PF-RG_F90 K4S56163PF-RG_F1L K4S56163PF-RG_F75 K4S56163PF-

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S56163PF K4S56163PF-F1L K4S56163PF-F90 K4S56163PF-RG K4S56163PF-RG_F90 K4S56163PF-RG_F1L K4S56163PF-RG_F75 K4S56163PF-RG/F90 K4S56163PF-RG/F1L K4S56163PF-RG/F75 K4S56163PF-RF750 K4S56163PF-BF900 K4S56163PF-RG750 K4S56163PF-BG750 K4S56163PF-RF900
OCR Text mobile sdram in 54FBGA FEATURES * 1.8V power supply. * LVCMOS compatible with multiplexed address. * Four banks operation. * MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst...
Description 16M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 LEAD FREE, FBGA-54
16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 LEAD FREE, FBGA-54
16M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 FBGA-54
4M x 16Bit x 4 Banks mobile sdram in 54FBGA 4米16 × 4银行4FBGA移动sdram
CAP 47UF 350V ELECT EB SMD

File Size 111.59K  /  12 Page

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    AV9148F-08

Integrated Circuit Systems
Part No. AV9148F-08
OCR Text ...ic 0 level, when input low (in mobile mode, mode=0) 17, 18, 20, 21, 28, 29, 31, 32, 34, 35,37,38 sdram (0:11) out sdram clock outputs. 19,30,36 vdd3 pwr supply for sdram (0:11), pll core and 24,48mhz clocks, nominal 3.3v 23 sdata in data ...
Description Frequency generator and integrated buffers for Pentium/PRO

File Size 626.41K  /  14 Page

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    K4M281633F K4M281633F-C K4M281633F-F1L K4M281633F-G K4M281633F-L K4M281633F-N K4M281633F-RE

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K4M281633F K4M281633F-C K4M281633F-F1L K4M281633F-G K4M281633F-L K4M281633F-N K4M281633F-RE
OCR Text mobile sdram in 54FBGA FEATURES * 3.0V & 3.3V power supply. * LVCMOS compatible with multiplexed address. * Four banks operation. * MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -...
Description 2M x 16Bit x 4 Banks mobile sdram in 54FBGA 200万16 × 4银行54FBGA移动sdram

File Size 111.99K  /  12 Page

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    K4M28163LF K4M28163LF-C K4M28163LF-L K4M28163LF-N K4M28163LF-R1L K4M28163LF-R75 K4M28163LF-RE K4M28163LF-S K4M28163LF-BR

SAMSUNG[Samsung semiconductor]
Samsung Electronic
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K4M28163LF K4M28163LF-C K4M28163LF-L K4M28163LF-N K4M28163LF-R1L K4M28163LF-R75 K4M28163LF-RE K4M28163LF-S K4M28163LF-BR750
OCR Text mobile sdram in 54FBGA FEATURES * 2.5V power supply. * LVCMOS compatible with multiplexed address. * Four banks operation. * MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst...
Description 2M x 16Bit x 4 Banks mobile sdram in 54FBGA 200万16 × 4银行4FBGA移动sdram
8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54

File Size 112.71K  /  12 Page

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    K4M28163PF K4M28163PF-F75 K4M28163PF-R K4M28163PF-RBGF75 K4M28163PF-RG K4M28163PF-RF750 K4M28163PF-BF900 K4M28163PF-BF75

Samsung Electronic
Samsung Semiconductor Co., Ltd.
Data Device, Corp.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Part No. K4M28163PF K4M28163PF-F75 K4M28163PF-R K4M28163PF-RBGF75 K4M28163PF-RG K4M28163PF-RF750 K4M28163PF-BF900 K4M28163PF-BF750 K4M28163PF-BG750
OCR Text mobile sdram in 54FBGA FEATURES * 1.8V power supply. * LVCMOS compatible with multiplexed address. * Four banks operation. * MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst...
Description 2M x 16Bit x 4 Banks mobile sdram in 54FBGA 200万16 × 4银行4FBGA移动sdram
8M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 0.80 MM PITCH, LEAD FREE, FBGA-54
8M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 0.80 MM PITCH, LEAD FREE, FBGA-54
8M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 0.80 MM PITCH, FBGA-54

File Size 111.60K  /  12 Page

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    AV9148F-03

Integrated Circuit Systems
Part No. AV9148F-03
OCR Text ...gic 0 level, when input low (in mobile mode, mode=0) 17, 18, 20, 21, 28, 29, 31, 32, 34, 35,37,38 sdram (0:11) out sdram clock outputs. 19,30,36 vdd3 pwr supply for sdram (0:11), pll core and 24, 48mhz clocks, nominal 3.3.v 23 ss_en# 1 in...
Description Frequency generator and integrated buffers for Pentium/PRO

File Size 559.75K  /  12 Page

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    K4M513233E K4M513233E-F1H K4M513233E-F1L K4M513233E-F75 K4M513233E-L K4M513233E-MC K4M513233E-MEC K4M513233E-MC1L0

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4M513233E K4M513233E-F1H K4M513233E-F1L K4M513233E-F75 K4M513233E-L K4M513233E-MC K4M513233E-MEC K4M513233E-MC1L0
OCR Text mobile sdram in 90FBGA FEATURES * 3.0V & 3.3V power supply. * LVCMOS compatible with multiplexed address. * Four banks operation. * MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -...
Description 16M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA90
4M x 32Bit x 4 Banks mobile sdram in 90FBGA 4米32Bit的4银行0FBGA移动sdram

File Size 138.60K  /  12 Page

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For mobile sdram Found Datasheets File :: 1066    Search Time::2.203ms    
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