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Philips
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| Part No. |
PBSS4320T PBSS4320T_1
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| OCR Text |
low VCEsat NPN transistor
Product specification 2002 Aug 08
Philips Semiconductors
Product specification
20 V low VCEsat NPN transistor
FEATURES * Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat * Hig... |
| Description |
20 V low VCEsat NPN transistor From old datasheet system
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| File Size |
71.39K /
12 Page |
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it Online |
Download Datasheet
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CYSTEKEC[Cystech Electonics Corp.]
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| Part No. |
BTD1805D3
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| OCR Text |
Low Vcesat NPN Epitaxial Planar Transistor
Spec. No. : C820D3 Issued Date : 2005.03.29 Revised Date :2006.04.21 Page No. : 1/ 4
BTD1805D3
Description
The device is manufactured in NPN planar technology by using a "Base Island" layou... |
| Description |
Low Vcesat NPN Epitaxial Planar Transistor
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| File Size |
170.75K /
4 Page |
View
it Online |
Download Datasheet
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CYSTEKEC[Cystech Electonics Corp.]
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| Part No. |
BTD1805FP
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| OCR Text |
Low Vcesat NPN Epitaxial Planar Transistor
Spec. No. : C820FP Issued Date : 2005.03.29 Revised Date :2005.07.26 Page No. : 1/ 4
BTD1805FP
Description
The device is manufactured in NPN planar technology by using a "Base Island" layou... |
| Description |
Low Vcesat NPN Epitaxial Planar Transistor
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| File Size |
169.26K /
4 Page |
View
it Online |
Download Datasheet
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CYSTEKEC[Cystech Electonics Corp.]
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| Part No. |
BTD1805I3
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| OCR Text |
Low Vcesat NPN Epitaxial Planar Transistor
Spec. No. : C820I3 Issued Date : 2004.12.19 Revised Date :2005.07.26 Page No. : 1/ 4
BTD1805I3
Description
The device is manufactured in NPN planar technology by using a "Base Island" layou... |
| Description |
Low Vcesat NPN Epitaxial Planar Transistor
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| File Size |
160.36K /
4 Page |
View
it Online |
Download Datasheet
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Price and Availability
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