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isd-74 Datasheet PDF File

For isd-74 Found Datasheets File :: 804 Search Time::2.281ms
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				INTERSIL[Intersil Corporation]
Part No.	FSJ9160R FSJ9160R1 FSJ9160R3 FSJ9160R4 FSJ9160D FN4465 FSJ9160 FSJ9160D1 FSJ9160D3
OCR Text	... SYMBOL VSD trr TEST CONDITIONS ISD = 44A ISD = 44A, dISD/dt = 100A/s MIN -0.6 TYP MAX -1.8 230 UNITS V ns Electrical Specifications up to 100K RAD PARAMETER Drain to Source Breakdown Volts Gate to Source Threshold Volts Gate to Body Le...
Description	44A/ -100V/ 0.055 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs 44A, -100V, 0.055 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs From old datasheet system
File Size	45.96K / 8 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation] Intersil, Corp.
Part No.	FSYC9160R FSYC9160R1 FSYC9160R3 FSYC9160R4 FSYC9160D FN4552 FSYC9160D1 FSYC9160D3
OCR Text	... SYMBOL VSD trr TEST CONDITIONS ISD = 47A ISD = 47A, dISD/dt = 100A/s MIN -0.6 TYP MAX -1.8 200 UNITS V ns Electrical Specifications up t...74 0.053 UNITS V V nA A V 3. Insitu Gamma bias must be sampled for both VGS = -12V, VDS = 0V and...
Description	Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs From old datasheet system Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs 47 A, 100 V, 0.053 ohm, P-CHANNEL, Si, POWER, MOSFET
File Size	60.40K / 8 Page	View it Online	Download Datasheet

				FUJITSU[Fujitsu Media Devices Limited]
Part No.	MB86967 MB86967PFV
OCR Text	...I/O P IU/OD O O O O G O O O O I ISD ISU OD OD G OD -- P I I I -- -- Pin no. 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 9...74 75 Symbol VDD3 LEDL BA6 BA5 BA4 BA3 GND5 BA2 BA1 BA0 CLKO CLKI AEN CHRESET EOP LEDT GNDA1 LEDC I...
Description	LAN Controller with PC Card, ISA Bus, and General-purpose Bus Interfaces
File Size	625.19K / 129 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor, Corp.
Part No.	HRF3205 HRF3205S HRF3205NL
OCR Text	...o Drain Current (Note 2) SYMBOL ISD ISDM TEST CONDITIONS MOSFET Symbol Showing The Integral Reverse P-N Junction Diode D MIN - TYP - MAX 100 (Note 1 390 UNITS A A G S Source to Drain Diode Voltage Reverse Recovery Time...
Description	100A, 55V, 0.008 Ohm, N-Channel, PowerMOSFETs 100A/ 55V/ 0.008 Ohm/ N-Channel/ Power MOSFETs 100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs 100 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB 100A, 55V, 0.008 Ohm, N-Channel, Power MOSFETs 100 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
File Size	185.98K / 9 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	HUFA76419D3 HUFA76419D3S HUFA76419D3STNL
OCR Text	...iode Voltage SYMBOL VSD trr QRR ISD = 20A ISD = 10A Reverse Recovery Time Reverse Recovered Charge ISD = 20A, dISD/dt = 100A/s ISD = 20A, dISD/dt = 100A/s TEST CONDITIONS MIN TYP MAX 1.25 1.0 74 200 UNITS V V ns nC (c)2001 Fairchild Semi...
Description	20A, 60V, 0.043 Ohm, N-Channel, Logic Level UltraFETPower MOSFETs 20A, 60V, 0.043 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs
File Size	194.86K / 10 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	IRF634A IRF634
OCR Text	...0V, RG=27, Starting TJ =25C (3) ISD 8.1A, di/dt 210A/s, VDD BVDSS , Starting TJ =25C (4) Pulse Test: Pulse Width = 250s, Duty Cycle 2% (5) Essentially Independent of Operating Temperature 1&+$11(/ 32:(5 026)(7 Fig 1. Output Characte...
Description	Advanced Power MOSFET
File Size	222.50K / 7 Page	View it Online	Download Datasheet

				Samsung semiconductor FAIRCHILD[Fairchild Semiconductor]
Part No.	IRF634B IRFS634B IRF634BFP001
OCR Text	... RG = 25 , Starting TJ = 25C 3. ISD 8.1A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature (c)2001 Fairchild Semiconductor Corporation ...
Description	250V N-Channel B-FET / Substitute of IRF634 & IRF634A 250V N-Channel MOSFET
File Size	856.87K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFPS3810
OCR Text	...limitation current is 105A. ISD 100A, di/dt 350A/s, VDD V(BR)DSS, 2 TJ 175C www.irf.com APPROVED IRFPS3810 VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V TOP 1000 I D , Drain-to-Source Current (A) 100 I ...
Description	Power MOSFET(Vdss=100V, Rds(on)=0.009ohm, Id=170A? Power MOSFET(Vdss=100V, Rds(on)=0.009ohm, Id=170A) Power MOSFET(Vdss=100V Rds(on)=0.009ohm Id=170A) Power MOSFET(Vdss=100V, Rds(on)=0.009ohm, Id=170A?)
File Size	122.48K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFPS3815
OCR Text	...s rising from 0 to 80% VDSS ISD 58A, di/dt 450A/s, VDD V(BR)DSS, TJ 175C 2 www.irf.com IRFPS3815 1000 100 10 1 5.0V I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) VGS 15V 12V 10...
Description	150V Single N-Channel HEXFET Power MOSFET in a Super 247 (TO-274AA) package Power MOSFET(Vdss=150V, Rds(on)=0.015ohm, Id=105A)
File Size	100.34K / 8 Page	View it Online	Download Datasheet

For isd-74 Found Datasheets File :: 804 Search Time::2.281ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | <7> | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |