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1N4864 TDA9103 ULN2005L 50218 2M10V B1340 84134901 PM5344
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  id-1.9a Datasheet PDF File

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    MAXIM - Dallas Semiconductor
Part No. DS1991
OCR Text ...ts each 64-bit password and id fields for each memory block 512-bit scratchpad ensu res data transfer integrity operating temper...1-wire ? protocol ensure compatibility with ibutton ? family button shape is self-aligning with ...
Description MultiKey iButton

File Size 303.05K  /  15 Page

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    FMV09N90E

Fuji Electric
Part No. FMV09N90E
OCR Text ... typical output characteristics id=f(vds):80 s pulse test,tch=25 c v g s =5 . 5 v 0 1 2 3 4 5 6 7 8 9 1 0 0 . 1 1 1 0 10 0 ] a [ d i v g s [ v ] typical transfer characteristic id=f(vgs):80 s pulse test,vds=25v,tch=25 c 0. 1 1 1 0 10...
Description N-CHANNEL SILICON POWER MOSFET

File Size 401.96K  /  5 Page

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    SDM8401

SamHop Microelectronics Corp.
ETC
Part No. SDM8401
OCR Text ... (P -C hannel) V DS S -30V ID 6A R DS (ON) ( m W ) TYP ID -4.5A R DS (ON) ( m W ) TYP 18.5 @ V G S = 10V 25 @ V G S...1 1 2 3 4 S1 G1 S 2 G2 ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted) P a...
Description Dual E nhancement Mode Field E ffect Transistor ( N and P Channel)

File Size 1,028.05K  /  9 Page

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    FMR09N90E

Fuji Electric
Part No. FMR09N90E
OCR Text ... typical output characteristics id=f(vds):80 s pulse test,tch=25 c v g s =5 . 5 v 0 1 2 3 4 5 6 7 8 9 1 0 0 . 1 1 1 0 10 0 ] a [ d i v g s [ v ] typical transfer characteristic id=f(vgs):80 s pulse test,vds=25v,tch=25 c 0. 1 1 1 0 1...
Description N-CHANNEL SILICON POWER MOSFET

File Size 400.31K  /  5 Page

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    FMH09N90E

Fuji Electric
Part No. FMH09N90E
OCR Text ... typical output characteristics id=f(vds):80 s pulse test,tch=25 c v g s =5 . 5 v 0 1 2 3 4 5 6 7 8 9 1 0 0 . 1 1 1 0 10 0 ] a [ d i v g s [ v ] typical transfer characteristic id=f(vgs):80 s pulse test,vds=25v,tch=25 c 0. 1 1 1 0 1...
Description N-CHANNEL SILICON POWER MOSFET

File Size 411.52K  /  5 Page

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    JILIN SINO-MICROELECTRONICS CO., LTD.
Part No. JCS9N90FT-O-F-N-B
OCR Text ID VDSS Rdson @Vgs=10V Qg UPS 9A 900 V 1.35 43 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts based on half bridge UPS FEATURES Low gate charge Low Crss (typical 13pF ) Fast switching 100% ...
Description N-CHANNEL MOSFET

File Size 845.36K  /  8 Page

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    JILIN SINO-MICROELECTRONICS CO., LTD.
Part No. JCS9N50FT-O-F-N-B JCS9N50CT-O-C-N-B JCS9N50T
OCR Text ID VDSS Rdson @Vgs=10V Qg UPS 9A 500 V 0.75 29 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ball...1/10 R JCS9N50T ABSOLUTE RATINGS (Tc=25) JCS9N50CT 500 9 5.7 36 30 369 9 15.8 4.5 JC...
Description N-CHANNEL MOSFET

File Size 1,351.73K  /  10 Page

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    ST Microelectronics
Part No. IRF630 IRF630FP IRF630ST4
OCR Text ...V RDS(on) < 0.40 < 0.40 ID 9A 9A TYPICAL RDS(on) = 0.35 EXTREMELY HIGH dv/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED TO-220 3 1 2 1 2 3 TO-220FP DESCRIPTION This power MOSFET is designed usi...
Description N-CHANNEL 200V - 0.35 OHM - 9A - TO-220/TO220-FP MESH OVERLAY MOSFET
N-CHANNEL 200V - 0.35 OHM - 9A - TO-220/TO220-FP MESH OVERLAY MOSFET

File Size 344.01K  /  9 Page

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    CEF02N7 CEB02N7 CEI02N7 CEP02N7

Chino-Excel Technology
Part No. CEF02N7 CEB02N7 CEI02N7 CEP02N7
OCR Text ...0V 700V RDS(ON) 6.6 6.6 6.6 6.6 ID 1.9A 1.9A 1.9A 1.9A e @VGS 10V 10V 10V 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 & TO-262 pa...
Description N-Channel Enhancement Mode Field Effect Transistor

File Size 123.50K  /  4 Page

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    IRFR220NPBF

International Rectifier
Part No. IRFR220NPBF
OCR Text ...SS RDS(on) max (m) 200V 600 ID 5.0A Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance I...1.6mm from case ) Units A W W/C V V/ns C Typical SMPS Topologies l Telecom 48V input Forw...
Description (IRFR220NPBF / IRFU220NPBF) HEXFET Power MOSFET

File Size 245.09K  /  10 Page

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