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				NEC
Part No.	UPD42S18165L UPD42S18165LLE-A70 UPD42S18165LG5-A50-7JF UPD42S18165LG5-A60-7JF UPD42S18165LLE-A50 UPD42S18165LLE-A60 UPD42S18165LG5-A70-7JF UPD4218165L UPD4218165LG5-A50-7JF UPD4218165LG5-A60-7JF UPD4218165LG5-A70-7JF UPD4218165LLE-A50 UPD4218165LLE-A60 UPD4218165LLE-A70
OCR Text	...lastic SOJ. Features * EDO (Hyper page mode) * 1,048,576 words by 16 bits organization * Single +3.3 V 0.3 V power supply * Fast access and cycle time Power consumption Active (MAX.) 612 mW 540 mW 504 mW Access time (MAX.) 50 ns 60 ns ...
Description	3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE
File Size	463.31K / 48 Page	View it Online	Download Datasheet

				SSDI[Solid States Devices Inc] Solid States Devices, Inc
Part No.	1N4148SM
OCR Text	...a Sheet FEATURES: * * * * * * Hyper Fast Recovery: 5 nsec maximum Subminiature Surface Mount Package Round Tab Mounting (Square Tabs Available) Hermetically Sealed Planar Passivated Chip For High Efficiency Applications 200 mAMP 75 VOL...
Description	200 mAMP 75 VOLTS 5 nsec HYPER FAST RECTIFIER
File Size	45.72K / 2 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	KM416V4104CS-45 KM416V4104C KM416V4004C KM416V4004CS-L50
OCR Text	... Access time from CAS precharge Hyper Page cycle time Hyper Page read-modify-write cycle time CAS precharge time (Hyper page cycle) RAS pulse width (Hyper page cycle) RAS hold time from CAS precharge OE access time OE to data delay CAS prec...
Description	4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power
File Size	807.58K / 36 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
Part No.	KMM5361205C2WG KMM5361205C2W
OCR Text	...tput loading CL=100pF Parameter Hyper page mode cycle time CAS precharge time(Hyper page cycle) RAS pulse width(Hyper page cycle) RAS hold time from CAS precharge W to RAS precharge time(C-B-R refresh) W to RAS hold time(C-B-R refresh) Outp...
Description	1M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh
File Size	281.12K / 17 Page	View it Online	Download Datasheet

				Samsung Semiconductor
Part No.	KMM5361205C2W
OCR Text	...tput loading CL=100pF Parameter Hyper page mode cycle time CAS precharge time(Hyper page cycle) RAS pulse width(Hyper page cycle) RAS hold time from CAS precharge W to RAS precharge time(C-B-R refresh) W to RAS hold time(C-B-R refresh) Outp...
Description	1MBx36 DRAM Simm Using 1MBx16 And 4MB Quad Cas Edo
File Size	277.25K / 17 Page	View it Online	Download Datasheet

				Samsung semiconductor
Part No.	KMM5322104CKUG KMM5322104CKU
OCR Text	... Access time from CAS precharge Hyper page mode cycle time CAS precharge time from (Hyper Page Cycle) RAS pulse width (Hyper Page Cycle) RAS hold time from CAS precharge W to RAS precharge time (C-B-R refresh) W to RAS hold time (C-B-R refr...
Description	2M x 32 DRAM SIMM using 2Mx8 , 2K Refresh, 5V
File Size	265.96K / 15 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG[Samsung semiconductor]
Part No.	KMM5322204C2WG KMM5322204C2W
OCR Text	...tput loading CL=100pF Parameter Hyper page mode cycle time CAS precharge time(Hyper page cycle) RAS pulse width(Hyper page cycle) RAS hold time from CAS precharge W to RAS precharge time(C-B-R refresh) W to RAS hold time(C-B-R refresh) Outp...
Description	2M x 32 DRAM SIMM using 1Mx16 , 1K Refresh, 5V 200万32的DRAM上海药物研究所使用1Mx16，每1000刷新V
File Size	278.83K / 17 Page	View it Online	Download Datasheet

				Samsung Semiconductor
Part No.	KMM5364005CK
OCR Text	... Access time from CAS precharge Hyper page mode cycle time CAS precharge time(Hyper page cycle) RAS pulse width(Hyper page cycle) RAS hold time from CAS precharge W to RAS precharge time(C-B-R refresh) W to RAS hold time(C-B-R refresh) Outp...
Description	(KMM5364105CK / KMM5364005CK) 4MBx36 DRAM Simm Using 4MBx4 And 16MB Quad Cas
File Size	264.70K / 15 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor]
Part No.	KM416C1004C-5 KM416C1004C-L45 KM416C1004C-L5 KM416C1204C-5 KM416C1204C-6 KM416C1204C-L45 KM416C1204C-L5 KM416C1204C-L6 KM416C1204C KM416C1004C-45 KM416C1004C-6 KM416C1004C-L6 KM416C1204C-45 KM416V1004C KM416C10CJ-L45 KM416C10CJ-L5 KM416C10CJ-L6 KM416C10CT-L45 KM416C10CT-L5 KM416C12CJ-L45 KM416C12CJ-L5 KM416C12CJ-L6 KM416C12CT-L45 KM416C12CT-L5 KM416C12CT-L6 KM416V1204C KM416C10CT-L6 KM416V12CT-L6 KM416C1004C KM416V1004C-45 KM416V1004C-5 KM416V1004C-6 KM416V1004C-L45 KM416V1004C-L5 KM416V1004C-L6 KM416V10CJ-L45 KM416V10CJ-L5 KM416V10CJ-L6 KM416V10CT-L45 KM416V10CT-L5 KM416V10CT-L6 KM416V1204C-45 KM416V1204C-5 KM416V1204C-6 KM416V1204C-L45 KM416V1204C-L5 KM416V1204C-L6 KM416V12CJ-L45 KM416V12CJ-L5 KM416V12CJ-L6 KM416V12CT-L45 KM416V12CT-L5
OCR Text	... within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45...Fast Page Mode with Extended Data Out) * 2 CAS Byte/Word Read/Write operation * CAS-before-RAS refre...
Description	1M X 16BIT CMOS DYNAMIC RAM WITH EXTENDED DATA OUT
File Size	803.85K / 35 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd. SAMSUNG[Samsung semiconductor]
Part No.	KMM5364005CKG KMM5364105CKG KMM5364105CK KMM5364005CK
OCR Text	... Access time from CAS precharge Hyper page mode cycle time CAS precharge time(Hyper page cycle) RAS pulse width(Hyper page cycle) RAS hold time from CAS precharge W to RAS precharge time(C-B-R refresh) W to RAS hold time(C-B-R refresh) Outp...
Description	4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K, Refresh, 5V 4米36的DRAM上海药物研究所利用4Mx46M四中科院K/2K，刷新，5V
File Size	268.55K / 15 Page	View it Online	Download Datasheet

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