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  high-curre Datasheet PDF File

For high-curre Found Datasheets File :: 1235    Search Time::1.453ms    
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    2N5551BU 2N5551CTA 2N5551CBU

Fairchild Semiconductor
Part No. 2N5551BU 2N5551CTA 2N5551CBU
OCR Text ...is designed for general purpose high voltage amplifiers and gas discharge display drivers. Absolute Maximum Ratings* Symbol VCEO VCBO V...CURRE NT GAIN Typical Pulsed Current Gain vs Collector Current Collector-Emitter Saturation Vo...
Description NPN General Purpose Amplifier

File Size 72.87K  /  6 Page

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    SK52 SK53 SK58 SK56 SK510 SK54 SK545 SK55

Micro Commercial Compon...
MCC[Micro Commercial Components]
Micro Commercial Components Corp.
Part No. SK52 SK53 SK58 SK56 SK510 SK54 SK545 SK55
OCR Text ... Resistance Easy Pick And Place High Temp Soldering: 250OC for 10 Seconds At Terminals\ High Current Capability With Low Forward Voltage ...Curre nt - Amperes versus Ambient Temperature - C 140 160 180 100 200 400 1000 Junction ...
Description    5 Amp Schottky Rectifier 20 to 100 Volts
FERRITE TUBULAR BEAD 19.05MM

File Size 91.73K  /  3 Page

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    SANKEN[Sanken electric]
Part No. 2SC5124
OCR Text High Voltage Switchihg Transistor) sAbsolute maximum ratings (Ta=25C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC5124 1500 800 6 10(Pulse20)...Curre nt I C( A) 5 10 Co lle ctor Cu rre nt I C( A) 5 Maximu m Power Dissipa tion P C( W) 5...
Description Silicon NPN Triple Diffused Planar Transistor(Display Horizontal Deflection Output, Switching Regulator and General Purpose)
Silicon NPN Triple Diffused Planar Transistor(Display Horizontal Deflection Output Switching Regulator and General Purpose)

File Size 23.09K  /  1 Page

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    Sanken
Part No. 2SC5124
OCR Text High Voltage Switchihg Transistor) sAbsolute maximum ratings (Ta=25C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 1500 800 6 10(Pulse20)...Curre nt I C( A) 5 10 Co lle ctor Cu rre nt I C( A) 5 Maximu m Power Dissipa tion P C( W) 5...
Description Silicon NPN Transistor

File Size 29.25K  /  2 Page

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    IRKF132 IRKF132-08HL IRKF132-08HLN

International Rectifier, Corp.
Part No. IRKF132 IRKF132-08HL IRKF132-08HLN
OCR Text ...f thyristor Fast recovery diode High surge capability Electrically isolated baseplate 3000 V RMS isolating voltage Industrial standard packa...Curre nt Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current 10000 Instantaneous On-state C...
Description FAST THYRISTOR/ DIODE and THYRISTOR 快速晶闸管/二极管和晶闸

File Size 129.98K  /  8 Page

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    IXTH12N120

IXYS Corporation
Part No. IXTH12N120
OCR Text High Voltage Preliminary Data Sheet VDSS = 1200 V ID (cont) = 12 A RDS(on)= 1.4 Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS PD TJ ...Curre nt vs . Cas e Tem pe rature 14 12 Fig. 5. RDS(on) Norm alize d to 0.5 ID25 Value vs. ID 2...
Description Discrete MOSFETs: Standard N-channel Types
Power MOSFET, Avalanche Rated High Voltage

File Size 541.76K  /  4 Page

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    IXTH50P085

IXYS Corporation
Part No. IXTH50P085
OCR Text ...ID25 * * * * Applications High side switching Push-pull amplifiers DC choppers Automatic test equipment Advantages Easy to mount wi...Curre nt vs. Cas e Te m pe rature R D S (on) - Normalized 2 -40 I D - Amperes -100 -125...
Description Standard Power MOSFET

File Size 538.71K  /  4 Page

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    N.A.
ETC[ETC]
Part No. XE056LCC
OCR Text ...ternative to discrete DAA's for high-speed dialup communications. The XE056LCC replaces 25 to 30 discrete components. In spite of being less...Curre nt Holding Circuit Tip MOV Ring Transformer RI Ring Detect XECOM (1) XE056L...
Description Surface-Mount Slim-Link DAA for 56K bps Data Transfer

File Size 107.62K  /  12 Page

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    ANPEC[Anpec Electronics Coropration]
Part No. APM7313KC-TU APM7313KC-TR APM7313KC-TRL APM7313KC-TUL APM7313K
OCR Text ...n Description * * * Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant) (8) D1 Top View of SOP -...Curre nt 2.0 1.5 ID - Drain Current (A) o 6 Ptot - Power (W) 4 1.0 2 0.5 o...
Description Dual N-Channel Enhancement Mode MOSFET

File Size 173.02K  /  10 Page

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    IXTK102N30P

IXYS Corporation
Part No. IXTK102N30P
OCR Text ... Easy to mount Space savings High power density Symbol Test Conditions (TJ = 25 C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS...Curre nt vs . Cas e Te m pe rature 90 80 70 0.5 ID25 V alue vs . ID V GS = 10V External Lead...
Description PolarHT Power MOSFET

File Size 216.74K  /  5 Page

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