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NEC[NEC] NEC Corp. NEC, Corp.
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| Part No. |
NE661M04-T2 NE661M04
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| OCR Text |
...P.
MAX.
Unit
ICBO IEBO hFE
Note 1
VCB = 5 V, IE = 0 VEB = 1 V, IC = 0 VCE = 2 V, IC = 5 mA
- - 50
- - 70
100 100 100
nA nA -
VCB = 2 V, IE = 0, f = 1 MHz VCE = 3 V, IC = 10 mA, f = 2 GHz VCE = 2 V, IC = 2 mA, f =... |
| Description |
NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD NPN SILICON RF TRANSISTOR FOR LOW CURRENT / LOW NOISE / HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD NPN硅射频晶体管,低噪声,高增益放大平引引脚薄型超小型,低电流模
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| File Size |
68.27K /
12 Page |
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NXP Semiconductors N.V. NXP Semiconductors / Philips Semiconductors
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| Part No. |
2PB1424 2PB1424115
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| OCR Text |
...CM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) are...low VCEsat (BISS) transistor
2. Pinning information
Table 2. Pin 1 2 3 Pinning Description emitt... |
| Description |
20 V, 3 A PNP low VCEsat (BISS) transistor 20伏,3安PNP型低饱和压降(BISS)晶体管
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| File Size |
116.84K /
13 Page |
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it Online |
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SANYO
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| Part No. |
15C02S
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| OCR Text |
...ration Voltage Symbol ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) VCB=12V, IE=0 VEB=4V, IC=0 VCE=2V, IC=50mA VCE=2V, IC=50mA VCB=10V, f=1MHz IC=400mA, IB=20mA IC=400mA, IB=20mA 300 440 4 140 0.9 280 1.2 Conditions Ratings min typ max 100 100 800... |
| Description |
Pico-TR Series
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| File Size |
34.74K /
5 Page |
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it Online |
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Price and Availability
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