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  h.m.b-19 Datasheet PDF File

For h.m.b-19 Found Datasheets File :: 38934    Search Time::2.469ms    
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    TOSHIBA[Toshiba Semiconductor]
Part No. TPCM8001-H
OCR Text H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII) TPCM8001-H High Speed and High Efficiency DC...m S pF ID = 10A V OUT RL = 1.5 ns nC Duty < 1%, tw = 10 s = V DD 15 V - V ...
Description MOSFET TPC Series
High Speed and High Efficiency DC-DC Converters, Notebook PC Applications, Portable Equipment Applications

File Size 38.24K  /  4 Page

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    HYMD564726AL8-H HYMD564726AL8-K HYMD564726A8-H HYMD564726A8-K HYMD564726A8-L HYMD564726A8-M HYMD564726AL8-M HYMD564726AL

Hynix Semiconductor
Part No. HYMD564726AL8-H HYMD564726AL8-K HYMD564726A8-H HYMD564726A8-K HYMD564726A8-L HYMD564726A8-M HYMD564726AL8-M HYMD564726AL8-L HYMD564726A8J-D4 HYMD564726A8J-J
OCR Text H/L DESCRIPTION Preliminary 64Mx72 bits Hynix HYMD564726A(L)8-M/K/H/L series is unbuffered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules (DIMMs) which are organized as 64Mx72 high-speed memory arrays. Hynix H...
Description Unbuffered DDR SDRAM DIMM

File Size 264.04K  /  16 Page

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    B82442-H

EPCOS
Part No. B82442-H
OCR Text h rated current 35 to 2500 ma construction n upright ferrite drum core n laser-welded winding n flame-retardant encapsulation features n ver...m m cu; 1C2 m m ag; 5C7 m m sn n base material cusn6 n no leaching during wave soldering marking mar...
Description Rated inductance

File Size 121.44K  /  6 Page

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    HYMD232726CL8-H HYMD232726CL8-K HYMD232726CL8-L HYMD232726CL8-M HYMD232726C8-M HYMD232726C8-L HYMD232726C8-H HYMD232726C

HYNIX SEMICONDUCTOR INC
Part No. HYMD232726CL8-H HYMD232726CL8-K HYMD232726CL8-L HYMD232726CL8-M HYMD232726C8-M HYMD232726C8-L HYMD232726C8-H HYMD232726C8-K
OCR Text H/L DESCRIPTION 32Mx72 bits Hynix HYMD232726C(L)8-M/K/H/L series is unbuffered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules (DIMMs) which are organized as 32Mx72 high-speed memory arrays. Hynix HYMD232726C(L)...
Description DDR SDRAM - Unbuffered DIMM 256MB
32M X 72 DDR DRAM MODULE, 0.8 ns, DMA184
Unbuffered DDR SDRAM DIMM

File Size 153.34K  /  16 Page

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    HYMD232726AL8-H HYMD232726AL8-K HYMD232726A8-H HYMD232726A8-K HYMD232726A8-L HYMD232726A8-M HYMD232726A8J-D4 HYMD232726A

Hynix Semiconductor
Part No. HYMD232726AL8-H HYMD232726AL8-K HYMD232726A8-H HYMD232726A8-K HYMD232726A8-L HYMD232726A8-M HYMD232726A8J-D4 HYMD232726AL8-L HYMD232726AL8-M HYMD232726A8J-D43 HYMD232726A8J-J HYMD232726A8
OCR Text H/L DESCRIPTION 32Mx72 bits Hynix HYMD232726A(L)8-M/K/H/L series is unbuffered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules (DIMMs) which are organized as 32Mx72 high-speed memory arrays. Hynix HYMD232726A(L)...
Description DDR SDRAM - Unbuffered DIMM 256MB
Unbuffered DDR SDRAM DIMM

File Size 257.83K  /  16 Page

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    Toshiba
Part No. TPCA8057-H
OCR Text h 1 mosfets silicon n-channel mos (u-mos -h) tpca8057-h tpca8057-h tpca8057-h tpca8057-h 1. 1. 1. 1. applications applications applicat...m ? (typ.) (v gs = 4.5 v) (5) low leakage current: i dss = 10 a (max) (v ds = 30 v) (6) enhanc...
Description Field Effect Transistor

File Size 283.89K  /  9 Page

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    STF26NM60N-H

意法半导
STMicroelectronics
Part No. STF26NM60N-H
OCR Text H N-channel 600 V, 0.135 20 A MDmeshTM II Power MOSFET , in TO-220FP Features Type STF26NM60N-H VDSS 600 V RDS(on) max < 0.165...m ite tion d by in t m his ax a R rea D S( on ) is 10s 100s 1ms 10ms 1 0.1 Tj=150C...
Description Low gate input resistance

File Size 678.92K  /  12 Page

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    TOSHIBA
Part No. TPC8221-H
OCR Text h 1 mosfets silicon n-channel mos (u-mos -h) tpc8221-h tpc8221-h tpc8221-h tpc8221-h 1. 1. 1. 1. applications applications applications...m ? (typ.) (v gs = 4.5 v) (5) low leakage current: i dss = 10 a (max) (v ds = 30 v) (6) enhanc...
Description Power MOSFET (N-ch dual)

File Size 384.43K  /  9 Page

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    TPCA8057-H

Toshiba Semiconductor
Part No. TPCA8057-H
OCR Text h 1 mosfets silicon n-channel mos (u-mos -h) tpca8057-h tpca8057-h tpca8057-h tpca8057-h 1. 1. 1. 1. applications applications applicat...m ? (typ.) (v gs = 4.5 v) (5) low leakage current: i dss = 10 a (max) (v ds = 30 v) (6) enhanc...
Description MOSFETs Silicon N-Channel MOS (U-MOS-H)

File Size 261.23K  /  9 Page

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    TOSHIBA[Toshiba Semiconductor]
Part No. TPCA8010-H
OCR Text H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type(I -MOSV) TPCA8010-H High Speed and High Efficiency DC-DC Converters * * *...M A Low drain-source ON resistance: R DS (ON) = 380mO (typ.) High forward transfer admittance: |Y...
Description MOSFET TPC Series
High Speed and High Efficiency DC-DC Converters

File Size 37.14K  /  4 Page

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For h.m.b-19 Found Datasheets File :: 38934    Search Time::2.469ms    
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