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  gma Datasheet PDF File

For gma Found Datasheets File :: 438    Search Time::1.5ms    
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    BFP540F

INFINEON[Infineon Technologies AG]
Part No. BFP540F
OCR Text ...eter in V 30 GHz Power gain gma, Gms = (IC) VCE = 2V f = Parameter in GHz 30 dB 26 24 22 20 24 22 20 0.9GHz fT 18 16 14 12 10 8 6 4 2 0 0 10 20 30 40 50 60 70 80 mA 100 0.5V 1V 2V 3V to 4V G 18 16 14 12 10 8 6 4 2 0...
Description RF-Bipolar - NPN Silicon RF transistor for low noise, highest gain LNA in NEW thin small flatlead package TSFP-4

File Size 186.98K  /  6 Page

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    BFP540

INFINEON[Infineon Technologies AG]
Part No. BFP540
OCR Text ...ter in V 35 GHz Power gain gma, Gms = (IC) VCE = 2V f = Parameter in GHz 30 dB 1 25 20 fT 20 4 3 G 2 15 3 15 2 1.5 1 10 4 5 6 10 5 0.5 5 0 0 10 20 30 40 50 60 70 m...
Description RF-Bipolar - NPN Silicon RF transistor for low noise, highest gain amplifiers

File Size 157.55K  /  7 Page

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    SIEMENS[Siemens Semiconductor Group]
Infineon
Part No. BFP182R Q62702-F1601
OCR Text ..., ZL = ZLopt Power gain 2) gma |S21e|2 17 11 15 - IC = 10 mA, VCE = 8 V, f = 1.8 GHz ZS = ZSopt, ZL = ZLopt Transducer gain IC = 10 mA, VCE = 8 V, ZS =ZL= 50 f = 900 MHz f = 1.8 GHz 1) Gms = |S21/S12| 2) gma = |S21/S12| (k-(k...
Description NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA)
From old datasheet system

File Size 58.13K  /  7 Page

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    SIEMENS[Siemens Semiconductor Group]
Infineon
Part No. BFP182W Q62702-F1502
OCR Text ..., ZL = ZLopt Power gain 2) gma |S21e|2 17.5 12 15.5 - IC = 10 mA, VCE = 8 V, f = 1.8 GHz ZS = ZSopt, ZL = ZLopt Transducer gain IC = 10 mA, VCE = 8 V, ZS =ZL= 50 f = 900 MHz f = 1.8 GHz 1) Gms = |S21/S12| 2) gma = |S21/S12| (...
Description NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA)
From old datasheet system

File Size 59.09K  /  7 Page

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    SIEMENS[Siemens Semiconductor Group]
Infineon
Part No. BFP182 Q62702-F1396
OCR Text ..., ZL = ZLopt Power gain 2) gma |S21e|2 17 11 15 - IC = 10 mA, VCE = 8 V, f = 1.8 GHz ZS = ZSopt, ZL = ZLopt Transducer gain IC = 10 mA, VCE = 8 V, ZS =ZL= 50 f = 900 MHz f = 1.8 GHz 1) Gms = |S21/S12| 2) gma = |S21/S12| (k-(k...
Description NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA)
From old datasheet system

File Size 60.21K  /  7 Page

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    BFP720

Infineon Technologies AG
Part No. BFP720
OCR Text ... . . . . . . . . . . Power Gain gma, Gms, IS21I = f (f) VCE = 3 V, IC = 13 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Input Matching S11 vs. Frequency VCE = 3 V, IC = 5 mA / 13 mA . . . . . . . . . . . . . . . . . . . ...
Description C Heterojunction Wideband RF Bipolar Transistor

File Size 1,506.43K  /  26 Page

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    SIEMENS[Siemens Semiconductor Group]
Infineon
Part No. BFR194 Q62702-F1346
OCR Text ... f = 1.8 GHz Power gain 2) gma IC = 70 mA, VCE = 8 V, ZS = ZSopt ZL = ZLopt f = 900 MHz f = 1.8 GHz Transducer gain |S21e|2 8 3 10 5.5 - IC = 70 mA, VCE = 8 V, ZS =ZL= 50 f = 900 MHz f = 1.8 MHz 2) gma = |S21/S12| (k-(k2-1)1/2...
Description PNP Silicon RF Transistor (For low distortion broadband amplifiers in antenna and telecommunications)
From old datasheet system

File Size 57.54K  /  7 Page

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    iBase-i
Part No. IB950
OCR Text ...dia Accelerator X3100 (Intel(R) gma X3100) architecture, operates at core speeds of up to 400 MHz. It features a low-power design, is validated with the Intel(R) Core 2 Duo and Intel(R) Celeron processors on 65nm process. With dual channel ...
Description Disk Size Embedded Board User Manual

File Size 1,319.15K  /  63 Page

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    SIEMENS[Siemens Semiconductor Group]
Part No. Q62702-F1315 BFR182
OCR Text ... f = 1.8 GHz Power gain 2) gma IC = 10 mA, VCE = 8 V, ZS = ZSopt ZL = ZLopt f = 900 MHz f = 1.8 GHz Transducer gain |S21e|2 14.5 9 17.5 11.5 - IC = 10 mA, VCE = 8 V, ZS =ZL= 50 f = 900 MHz f = 1.8 GHz 2) gma = |S21/S12| (k-(k2...
Description From old datasheet system
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA)

File Size 71.66K  /  8 Page

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    BFY450P BFY450 BFY450ES BFY450H BFY450S

INFINEON[Infineon Technologies AG]
Part No. BFY450P BFY450 BFY450ES BFY450H BFY450S
OCR Text ...dBm 1.8 GHz Max. Available Gain gma = 16dB at 1.8 GHz Hermetically sealed microwave package Transition Frequency fT = 20 GHz SIEGET 25-Line Infineon Technologies Grounded Emitter Transistor25 GHz fT-Line Space Qualified ESA/SCC Detail Spec....
Description HiRel NPN Silicon RF Transistor

File Size 392.38K  /  5 Page

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For gma Found Datasheets File :: 438    Search Time::1.5ms    
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