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For g-die Found Datasheets File :: 27928    Search Time::8.281ms    
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    IRF9520 FN2281

INTERSIL[Intersil Corporation]
Part No. IRF9520 FN2281
OCR Text ...PACKAGE TO-220AB BRAND IRF9520 G NOTE: When ordering, use the entire part number. S Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRA...Die Internal Devices Measured From the Drain Inductances Lead, 6mm (0.25in) from Package to Center o...
Description 6A, 100V, 0.600 Ohm, P-Channel Power MOSFET(6A, 100V, 0.600 惟, P娌?????MOS?烘?搴??)
From old datasheet system
6A 100V 0.600 Ohm P-Channel Power MOSFET
6A/ 100V/ 0.600 Ohm/ P-Channel Power MOSFET

File Size 57.36K  /  7 Page

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    IRF9530NL IRF9530NS IRF9530NSTRR

IRF[International Rectifier]
Part No. IRF9530NL IRF9530NS IRF9530NSTRR
OCR Text ... VDSS = -100V RDS(on) = 0.20 G ID = -14A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techn...die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance...
Description Power MOSFET(Vdss=-100V/ Rds(on)=0.20ohm/ Id=-14A)
Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A)

File Size 169.24K  /  10 Page

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    IRF9530N

IRF[International Rectifier]
Part No. IRF9530N
OCR Text ... VDSS = -100V RDS(on) = 0.20 G ID = -14A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced pro...die contact --- VGS = 0V --- pF VDS = -25V --- = 1.0MHz, See Fig. 5 D S Source-Drain Ratin...
Description Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A)

File Size 109.25K  /  8 Page

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    IRF9540NL IRF9540NS IRF9540NSTRL

IRF[International Rectifier]
Part No. IRF9540NL IRF9540NS IRF9540NSTRL
OCR Text ...VDSS = -100V RDS(on) = 0.117 G ID = -23A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techn...die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistanc...
Description Power MOSFET(Vdss=-100V/ Rds(on)=0.117ohm/ Id=-23A)
Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)

File Size 183.18K  /  10 Page

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    IRF9540N IRF9540 IRF9540NPBF

IRF[International Rectifier]
Part No. IRF9540N IRF9540 IRF9540NPBF
OCR Text ...VDSS = -100V RDS(on) = 0.117 G S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techni...die contact --- VGS = 0V --- pF VDS = -25V --- = 1.0MHz, See Fig. 5 D S Source-Drain Ratin...
Description -100V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)
Power MOSFET(Vdss=-100V/ Rds(on)=0.117ohm/ Id=-23A)

File Size 121.23K  /  8 Page

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    IRF9540 RF1S9540SM FN2282

Intersil, Corp.
INTERSIL[Intersil Corporation]
Part No. IRF9540 RF1S9540SM FN2282
OCR Text ...RF9540 RF1S9540 Symbol D G NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in th...Die Measured From the Drain Lead, 6mm (0.25in) from Package to the Center of Die Modified MOSFET Sym...
Description 19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs 19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
19A/ 100V/ 0.200 Ohm/ P-Channel Power MOSFETs
From old datasheet system

File Size 59.17K  /  7 Page

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    IRF9620 FN2283

INTERSIL[Intersil Corporation]
Part No. IRF9620 FN2283
OCR Text ...PACKAGE TO-220AB BRAND IRF9620 G S NOTE: When ordering, use the entire part number. Packaging JEDEC TO-220AB SOURCE DRAIN GATE D...Die Measured From the Drain Lead, 6mm (0.25in) from Package to Center of Die Modified MOSFET Symbol ...
Description 3.5A/ 200V/ 1.500 Ohm/ P-Channel Power MOSFET
3.5A, 200V, 1.500 Ohm, P-Channel Power MOSFET
3.5A 200V 1.500 Ohm P-Channel Power MOSFET
From old datasheet system

File Size 57.96K  /  7 Page

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    IRF9952

IRF[International Rectifier]
Part No. IRF9952
OCR Text ...G S = 0 V 1.2 A 1.4 V G S , Ga te-to-S o urce V oltage (V ) V S D , Source-to-D rain V oltage (V ) Fig 3. Typical Transfer Characteristics Fig 4. Typical Source-Drain Diode Forward Voltage IRF9952 2.0 N-Channel ...
Description Power MOSFET(Vdss= -30V)

File Size 128.20K  /  10 Page

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    IRF9953

IRF[International Rectifier]
Part No. IRF9953
OCR Text ...ol showing the integral reverse G p-n junction diode. S TJ = 25C, I S = -1.25A, VGS = 0V TJ = 25C, IF = -1.25A di/dt = -100A/s Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD -1...
Description Power MOSFET(Vdss=-30V, Rds(on)=0.25ohm)

File Size 98.36K  /  7 Page

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    IRF9956

IRF[International Rectifier]
Part No. IRF9956
OCR Text ...tions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, I S = 1.25A, VGS = 0V TJ = 25C, I F = 1.25A di/dt = 100A/s D S Notes: Repetitive rating; pulse width limited by max. junction temperature. ( Se...
Description Power MOSFET(Vdss=30V, Rds(on)=0.10ohm)

File Size 98.88K  /  7 Page

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