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For ecovery Found Datasheets File :: 545 Search Time::3.922ms
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				Nihon Inter Electronics Corporation
Part No.	PCHMB150E6 PCHMB150E6C
OCR Text	...t eak orward oltage everse ecovery ime = 150A,= 0V = 150A,= -10V i/t= 300A/s . . . . . . . hermal mpedance iode th(j-c) Junction to Case Tc . . . . . 35 00 ...
Description	IGBT Module-Chopper
File Size	318.41K / 4 Page	View it Online	Download Datasheet

				Nihon Inter Electronics Corporation
Part No.	PRHMB100E6
OCR Text	...t eak orward oltage everse ecovery ime = 100A,= 0V = 100A,= -10V i/t= 200A/s . . . . . . . hermal mpedance iode th(j-c) Junction to Case Tc . . . . . 00 Fig.1- ...
Description	IGBT Module-Dual
File Size	244.43K / 4 Page	View it Online	Download Datasheet

				Nihon Inter Electronics Corporation
Part No.	PRHMB150E6 PRHMB150E6C
OCR Text	...t eak orward oltage everse ecovery ime = 150A,= 0V = 150A,= -10V i/t= 300A/s . . . . . . . hermal mpedance iode th(j-c) Junction to Case Tc . . . . . 00 Fig.1-...
Description	IGBT Module-Dual
File Size	269.05K / 4 Page	View it Online	Download Datasheet

				Sirectifier Semiconductors
Part No.	SUR60100PT SUR6080PT SUR60120PT
OCR Text	...1.2 1.0 Kf 0.8 0.6 F ig. 2 R ecovery charge vers us -diF /dt. F ig. 3 P eak revers e current vers us -diF /dt. 60 1200 ns 1000 VFR 800 tfr 30 20 600 400 tfr 1.0 s 0.8 TVJ=100C VR=540V V 50 40 VFR IRM trr max. 0.6 IF...
Description	Ultra Fast Recovery Epitaxial Diodes
File Size	152.56K / 3 Page	View it Online	Download Datasheet

				Sirectifier Semiconductors
Part No.	SUR60100 SUR60120 SUR6080
OCR Text	...s us voltage drop. F ig. 2 R ecovery charge vers us -diF /dt. F ig. 3 P eak revers e current vers us -diF /dt. F ig. 4 Dynamic parameters vers us junction temperature. F ig. 5 R ecovery time vers us -diF /dt. F ig. 6 P eak fo...
Description	Ultra Fast Recovery Epitaxial Diodes
File Size	255.98K / 3 Page	View it Online	Download Datasheet

				Sirectifier Semiconductors
Part No.	SUR6020PT SUR6030PT SUR6060PT SUR6040PT
OCR Text	...s us voltage drop. F ig. 2 R ecovery charge vers us -diF /dt. F ig. 3 P eak revers e current vers us -diF /dt. F ig. 4 Dynamic parameters vers us junction temperature. F ig. 5 R ecovery time vers us -diF /dt. F ig. 6 P eak fo...
Description	Ultra Fast Recovery Epitaxial Diodes
File Size	263.42K / 3 Page	View it Online	Download Datasheet

				Sirectifier Semiconductors
Part No.	SUR30120 SUR3080 SUR30100
OCR Text	...1.2 1.0 Kf 0.8 0.6 F ig. 2 R ecovery charge vers us -diF /dt. F ig. 3 P eak revers e current vers us -diF /dt. 60 1200 ns 1000 VFR 800 tfr 30 20 600 400 tfr 1.0 s 0.8 TVJ=100C VR=540V V 50 40 VFR IRM trr max. 0.6 IF...
Description	Ultra Fast Recovery Epitaxial Diodes
File Size	140.75K / 3 Page	View it Online	Download Datasheet

				Nihon Inter Electronics Corporation
Part No.	PDMB100BS12
OCR Text	...t eak orward oltage everse ecovery ime . . . . . . = 100A,= 0V = 100A,= -10V i/t= 200A/s hermal mpedance iode th(j-c) Junction to Case Tc . . . . . QS043-402-2038...
Description	IGBT Module-Dual
File Size	281.99K / 4 Page	View it Online	Download Datasheet

For ecovery Found Datasheets File :: 545 Search Time::3.922ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | <7> | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |