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ST Microelectronics
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| Part No. |
STB55NF06L-1
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| OCR Text |
...tor 0.63 0.2 w/c dv/dt (2) peak diode recovery voltage slope 20 v/ns e as (1) single pulse avalanche energy 300 mj v iso insulation withstand voltage (dc) - 2500 v t stg storage temperature C 55 to 175 c t j max. operating junction tempera... |
| Description |
N-CHANNEL POWER MOSFET
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| File Size |
597.24K /
12 Page |
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it Online |
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Alpha & Omega Semiconductor
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| Part No. |
AOTF27S60
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| OCR Text |
...as mosfet dv/dt ruggedness peak diode recovery dv/dt h t j , t stg t l symbol r ja r cs r jc * drain current limited by maximum junction tempera ture. -55 to 150 300 aotf27s60l 65 -- 3.1 2.5 aotf27s60l 600 30 27* 17* 110 aotf27s60 singl... |
| Description |
Single HV MOSFETs (500V - 1000V)
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| File Size |
475.03K /
7 Page |
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it Online |
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Xian Semipower Electronic Technology Co., Ltd.
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| Part No. |
SWP12N60 SWF12N60 SW12N60
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| OCR Text |
... (note 1) 22.5 mj dv/dt peak diode recovery dv/dt (note 3) 5.0 v/ns p d total power dissipation (@t c =25 o c) 165 52* w derating factor above 25 o c 1.32 0.42 w/ o c t stg , t j operating junction ... |
| Description |
N-channel MOSFET
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| File Size |
929.73K /
7 Page |
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it Online |
Download Datasheet
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Xian Semipower Electronic Technology Co., Ltd. Xian Semipower Electron...
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| Part No. |
SWP12N65 SW12N65 SWF12N65
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| OCR Text |
... (note 1) 16.5 mj dv/dt peak diode recovery dv/dt (note 3) 5.0 v/ns p d total power dissipation (@t c =25 o c) 165 54* w derating factor above 25 o c 1.32 0.43 w/ o c t stg , t j operating junction ... |
| Description |
N-channel MOSFET N-channel MOSFET
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| File Size |
1,029.78K /
7 Page |
View
it Online |
Download Datasheet
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