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  diode diode Datasheet PDF File

For diode diode Found Datasheets File :: 167736    Search Time::1.75ms    
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    ST Microelectronics
Part No. STB55NF06L-1
OCR Text ...tor 0.63 0.2 w/c dv/dt (2) peak diode recovery voltage slope 20 v/ns e as (1) single pulse avalanche energy 300 mj v iso insulation withstand voltage (dc) - 2500 v t stg storage temperature C 55 to 175 c t j max. operating junction tempera...
Description N-CHANNEL POWER MOSFET

File Size 597.24K  /  12 Page

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    BTS120 C67078-A5009-A2

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
Part No. BTS120 C67078-A5009-A2
OCR Text .... Parameter Symbol min. Reverse diode Continuous source current Pulsed source current diode forward on-voltage I F = 38 A, VGS = 0 Reverse recovery time I F = I S, diF/dt = 100 A/s, VR = 30 V Reverse recovery charge I F = I S, diF/dt = 100 ...
Description From old datasheet system
TEMPFET (N channel Enhancement mode Temperature sensor with thyristor characteristic)
N-Channel TEMPFET

File Size 310.34K  /  9 Page

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    BUPD1520

Power Innovations Ltd
Power Innovations Limited
Part No. BUPD1520
OCR Text diode Copyright (c) 1999, Power Innovations Limited, UK MAY 1999 - REVISED SEPTEMBER 1999 G Designed for Self Oscillating Inverter Ap...diode B C E TO-220 PACKAGE (TOP VIEW) G G 1 2 3 Pin 2 is in electrical contact with the...
Description NPN SILICON TRANSISTOR WITH INTEGRATED diode

File Size 114.07K  /  5 Page

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    C67070-A2701-A67 050B17N2 BSM50GB170DN2

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. C67070-A2701-A67 050B17N2 BSM50GB170DN2
OCR Text ...e Thermal resistance, chip case diode thermal resistance, chip case Insulation test voltage, t = 1min. Creepage distance Clearance DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJCD Vis - Semic...
Description IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) IGBT功率模块(半桥包括快速续流二极管的绝缘金属基片包
From old datasheet system

File Size 111.79K  /  9 Page

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    Alpha & Omega Semiconductor
Part No. AOTF27S60
OCR Text ...as mosfet dv/dt ruggedness peak diode recovery dv/dt h t j , t stg t l symbol r ja r cs r jc * drain current limited by maximum junction tempera ture. -55 to 150 300 aotf27s60l 65 -- 3.1 2.5 aotf27s60l 600 30 27* 17* 110 aotf27s60 singl...
Description Single HV MOSFETs (500V - 1000V)

File Size 475.03K  /  7 Page

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    HUFA76413DK8T10

Fairchild Semiconductor
Part No. HUFA76413DK8T10
OCR Text ...y in the avalanche mode and the diode exhibits very low re- verse recovery time and stored charge. it was designed for use in applications where power efficiency is important, such as switching regulators, switching convertors, motor driver...
Description N-Channel Logic Level UltraFET? Power MOSFET 60V, 4.8A, 56mΩ

File Size 563.31K  /  11 Page

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    Xian Semipower Electronic Technology Co., Ltd.
Part No. SWP12N60 SWF12N60 SW12N60
OCR Text ... (note 1) 22.5 mj dv/dt peak diode recovery dv/dt (note 3) 5.0 v/ns p d total power dissipation (@t c =25 o c) 165 52* w derating factor above 25 o c 1.32 0.42 w/ o c t stg , t j operating junction ...
Description N-channel MOSFET

File Size 929.73K  /  7 Page

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    Xian Semipower Electronic Technology Co., Ltd.
Xian Semipower Electron...
Part No. SWP12N65 SW12N65 SWF12N65
OCR Text ... (note 1) 16.5 mj dv/dt peak diode recovery dv/dt (note 3) 5.0 v/ns p d total power dissipation (@t c =25 o c) 165 54* w derating factor above 25 o c 1.32 0.43 w/ o c t stg , t j operating junction ...
Description N-channel MOSFET
   N-channel MOSFET

File Size 1,029.78K  /  7 Page

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    FDS6680A12

Fairchild Semiconductor
Part No. FDS6680A12
OCR Text ... = 5 v 5.8 nc drain?source diode characteristics and maximum ratings i s maximum continuous drain?source diode forward current 2.1 a v sd drain?source diode forward voltage v gs = 0 v, i s = 2.1 a (note 2) 0.73 1.2...
Description Single N-Channel, Logic Level, PowerTrench? MOSFET

File Size 165.62K  /  5 Page

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    CPV364M4K

IRF[International Rectifier]
Part No. CPV364M4K
OCR Text ...nce Parameter RJC (IGBT) RJC (diode) RCS (MODULE) Wt Junction-to-Case, each IGBT, one IGBT in conduction Junction-to-Case, each diode, one diode in conduction Case-to-Sink, flat, greased surface Weight of module Typ. --- --- 0.10 20 (...
Description IGBT SIP MODULE

File Size 269.79K  /  10 Page

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For diode diode Found Datasheets File :: 167736    Search Time::1.75ms    
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