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Hitachi,Ltd.
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| Part No. |
2SJ214S 2SJ214L
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| OCR Text |
...o drain diode forward voltage v df C1.1v i f = C10 a, v gs = 0 body to drain diode reverse recovery time t rr 200 ns i f = C10 a, v gs = 0, di f /dt = 50 a/s note 1. pulse test see characteristic curves of 2sj172 60 40 20 0 50 100 150... |
| Description |
Silicon P Channel MOS FET(P沟道MOSFET)
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| File Size |
24.53K /
4 Page |
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Mitsumi Electronics
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| Part No. |
C12-H
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| OCR Text |
.... typ. dd 1r5 1.5 30 16 5.5 6.8 df 2r2 2.2 30 24 5.2 6.5 dg 3r3 3.3 30 27 4.9 4.5 dj 4r7 4.7 30 35 4.0 4.0 dk 6r2 6.2 30 40 3.7 3.7 dm 7r9 7...c10-h series) c10-h3.5r c10-h5r inductance dc resistance rated current* distinctive name marking tol... |
| Description |
Power Inductors
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| File Size |
109.59K /
6 Page |
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it Online |
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Cypress Semiconductor, Corp.
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| Part No. |
2SJ215
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| OCR Text |
...o drain diode forward voltage v df C1.3v i f = C35 a, v gs = 0 body to drain diode reverse recovery time t rr 250 ns i f = C35 a, v gs = 0, di f /dt = 50 a/s note 1. pulse test
2sj215 4 150 100 50 0 50 100 150 case temperature t c ... |
| Description |
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 35A I(D) | TO-247VAR 晶体管| MOSFET的| P通道| 60V的五(巴西)直| 35A条(丁)|47VAR
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| File Size |
44.97K /
9 Page |
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it Online |
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Hitachi,Ltd.
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| Part No. |
2SJ215
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| OCR Text |
...o drain diode forward voltage v df C1.3v i f = C35 a, v gs = 0 body to drain diode reverse recovery time t rr 250 ns i f = C35 a, v gs = 0, di f /dt = 50 a/s note 1. pulse test
2sj215 4 150 100 50 0 50 100 150 case temperature t c ... |
| Description |
Silicon P-Channel MOS FET(P沟道MOSFET) Silicon P-Channel MOS FET(P娌??MOSFET)
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| File Size |
58.52K /
9 Page |
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it Online |
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Renesas Technology
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| Part No. |
2SJ332
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| OCR Text |
...o drain diode forward voltage v df C1.2v i f = C10 a, v gs = 0 body to drain diode reverse recovery time t rr 50si f = C10 a, v gs = 0, di f /dt = 50 a/s note 1. pulse test
2sj332(l), 2sj332(s) 4 20
15
10
5 0 channel dissipation ... |
| Description |
Silicon P-Channel MOS FET
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| File Size |
79.83K /
9 Page |
View
it Online |
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Hitachi,Ltd.
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| Part No. |
2SJ323
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| OCR Text |
...o drain diode forward voltage v df C1.5v i f = C30 a, v gs = 0 body to drain diode reverse recovery time t rr 200 ns i f = C30 a, v gs = 0, di f /dt = 50 a/s note 1. pulse test see characteristic curve of 2sj280
2sj323 4 60
40
20
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| Description |
Silicon P-Channel MOS FET(P沟道MOSFET)
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| File Size |
32.14K /
5 Page |
View
it Online |
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Cornell Dubilier Electronics, Inc.
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| Part No. |
550CE1232 550C431T450AC2B
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| OCR Text |
...25 130.18 1.25 31.75 30.0 850 df 3.000 76.20 5.625 142.88 1.25 31.75 31.9 904 dp 3.000 76.20 5.875 149.23 1.25 31.75 32.8 931 dn 3.000 76.20 7.625 193.68 1.25 31.75 39.5 1119 dg 3.000 76.20 8.625 219.08 1.25 31.75 43.3 1227 fc... |
| Description |
CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 450 V, 430 uF, CHASSIS MOUNT CAN, ROHS COMPLIANT
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| File Size |
368.39K /
7 Page |
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it Online |
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Microsemi
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| Part No. |
0405SC-2200M
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| OCR Text |
...ut power pulse width = 300us, df = 6% 390 440 w d drain efficiency f = 450 mhz, p out =2200w 50 55 % load mismatch f...c10 1000uf 160v electrolytic capacitor z4 1125 x 500 mils (w x l) c11 1uf chip capacitor z5 1... |
| Description |
Class AB 406 to 450 MHz Silicon Carbide SIT
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| File Size |
249.54K /
5 Page |
View
it Online |
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Price and Availability
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