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  df-c10 Datasheet PDF File

For df-c10 Found Datasheets File :: 147    Search Time::1.547ms    
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    C5-K2.5R C5-K1.8R C5-K1.8RA C5-K3R C5-K3RA C13-K4.5L C4-K1.8R C4-K1.8RA C8-K5L C8-K5LA C8-K4L C6-K5LA C6-K3LA C6-K1.8R C

MITSUMI ELECTRIC CO., LTD.
Part No. C5-K2.5R C5-K1.8R C5-K1.8RA C5-K3R C5-K3RA C13-K4.5L C4-K1.8R C4-K1.8RA C8-K5L C8-K5LA C8-K4L C6-K5LA C6-K3LA C6-K1.8R C3-K C3-K1.8L C3-K1.5L C4-K3R C4-K3RA MITSUMIELECTRIC-C6-K1.8R MITSUMIELECTRIC-C3-K1.5L
OCR Text ...2r2 2.2 30 1khz - 43 1.35 1.90 df 2r7 2.7 30 1khz - 47 1.25 1.80 dg 3r3 3.3 30 1khz - 55 1.15 1.70 dh 3r9 3.9 30 1khz - 65 1.05 1.50 dj ...c10-k3l series) inductance dc current srf dcr (a) item stamp (mhz) (m ? ) inductance temp. (h) toler...
Description Power Inductors 功率电感
Power Inductors 1 ELEMENT, 68 uH, GENERAL PURPOSE INDUCTOR, SMD
Power Inductors 1 ELEMENT, 150 uH, GENERAL PURPOSE INDUCTOR, SMD

File Size 140.25K  /  16 Page

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    Hitachi,Ltd.
Part No. 2SJ214S 2SJ214L
OCR Text ...o drain diode forward voltage v df C1.1v i f = C10 a, v gs = 0 body to drain diode reverse recovery time t rr 200 ns i f = C10 a, v gs = 0, di f /dt = 50 a/s note 1. pulse test see characteristic curves of 2sj172 60 40 20 0 50 100 150...
Description Silicon P Channel MOS FET(P沟道MOSFET)

File Size 24.53K  /  4 Page

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    Mitsumi Electronics
Part No. C12-H
OCR Text .... typ. dd 1r5 1.5 30 16 5.5 6.8 df 2r2 2.2 30 24 5.2 6.5 dg 3r3 3.3 30 27 4.9 4.5 dj 4r7 4.7 30 35 4.0 4.0 dk 6r2 6.2 30 40 3.7 3.7 dm 7r9 7...c10-h series) c10-h3.5r c10-h5r inductance dc resistance rated current* distinctive name marking tol...
Description Power Inductors

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    Cypress Semiconductor, Corp.
Part No. 2SJ215
OCR Text ...o drain diode forward voltage v df C1.3v i f = C35 a, v gs = 0 body to drain diode reverse recovery time t rr 250 ns i f = C35 a, v gs = 0, di f /dt = 50 a/s note 1. pulse test 2sj215 4 150 100 50 0 50 100 150 case temperature t c ...
Description TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 35A I(D) | TO-247VAR 晶体管| MOSFET的| P通道| 60V的五(巴西)直| 35A条(丁)|47VAR

File Size 44.97K  /  9 Page

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    Hitachi,Ltd.
Part No. 2SJ215
OCR Text ...o drain diode forward voltage v df C1.3v i f = C35 a, v gs = 0 body to drain diode reverse recovery time t rr 250 ns i f = C35 a, v gs = 0, di f /dt = 50 a/s note 1. pulse test 2sj215 4 150 100 50 0 50 100 150 case temperature t c ...
Description Silicon P-Channel MOS FET(P沟道MOSFET)
Silicon P-Channel MOS FET(P娌??MOSFET)

File Size 58.52K  /  9 Page

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    Renesas Technology
Part No. 2SJ332
OCR Text ...o drain diode forward voltage v df C1.2v i f = C10 a, v gs = 0 body to drain diode reverse recovery time t rr 50si f = C10 a, v gs = 0, di f /dt = 50 a/s note 1. pulse test 2sj332(l), 2sj332(s) 4 20 15 10 5 0 channel dissipation ...
Description Silicon P-Channel MOS FET

File Size 79.83K  /  9 Page

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    Hitachi,Ltd.
Part No. 2SJ323
OCR Text ...o drain diode forward voltage v df C1.5v i f = C30 a, v gs = 0 body to drain diode reverse recovery time t rr 200 ns i f = C30 a, v gs = 0, di f /dt = 50 a/s note 1. pulse test see characteristic curve of 2sj280 2sj323 4 60 40 20 ...
Description Silicon P-Channel MOS FET(P沟道MOSFET)

File Size 32.14K  /  5 Page

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    Cornell Dubilier Electronics, Inc.
Part No. 550CE1232 550C431T450AC2B
OCR Text ...25 130.18 1.25 31.75 30.0 850 df 3.000 76.20 5.625 142.88 1.25 31.75 31.9 904 dp 3.000 76.20 5.875 149.23 1.25 31.75 32.8 931 dn 3.000 76.20 7.625 193.68 1.25 31.75 39.5 1119 dg 3.000 76.20 8.625 219.08 1.25 31.75 43.3 1227 fc...
Description CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID, POLARIZED, 450 V, 430 uF, CHASSIS MOUNT CAN, ROHS COMPLIANT

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    0405SC-2200M

Microsemi Corporation
Part No. 0405SC-2200M
OCR Text ...ut power pulse width = 300us, df = 6% 390 440 w d drain efficiency f = 450 mhz, p out =2200w 50 55 % load mismatch f...c10 1000uf 160v electrolytic capacitor z4 1125 x 500 mils (w x l) c11 1uf chip capacitor z5 1...
Description 2200Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT

File Size 224.98K  /  5 Page

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    Microsemi
Part No. 0405SC-2200M
OCR Text ...ut power pulse width = 300us, df = 6% 390 440 w d drain efficiency f = 450 mhz, p out =2200w 50 55 % load mismatch f...c10 1000uf 160v electrolytic capacitor z4 1125 x 500 mils (w x l) c11 1uf chip capacitor z5 1...
Description Class AB 406 to 450 MHz Silicon Carbide SIT

File Size 249.54K  /  5 Page

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For df-c10 Found Datasheets File :: 147    Search Time::1.547ms    
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