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c stm Datasheet PDF File

For c stm Found Datasheets File :: 3251 Search Time::5.64ms
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				ON Semiconductor MOTOROLA[Motorola Inc] MOTOROLA[Motorola, Inc]
Part No.	MTP10N40 MTP10N40E ON2540 MTP10N40E-D
OCR Text	...nit Vdc Vdc Vdc Vpk Adc Watts W/c c UNcLAMPED DRAIN-TO-SOURcE AVALANcHE cHARAcTERISTIcS (TJ < 150c) Single Pulse Drain-to-Source Avalanche Energy -- TJ = 25c Single Pulse Drain-to-Source Avalanche Energy -- TJ = 100c Repetitive Pulse Dr...
Description	TMOS E-FET High Energy Power FET N-channel Enhancement-Mode Silicon Gate TMOS POWER FET 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS From old datasheet system
File Size	249.12K / 8 Page	View it Online	Download Datasheet

				ON Semiconductor MOTOROLA[Motorola, Inc] http://
Part No.	MTP12N06EZL MTP12N06EZL_D ON2543 MTP12N06 MTP12N06EZL-D
OCR Text	...Vdc Vdc Vdc Vpk Adc Apk Watts W/c c mJ c/W c Designer's Data for "Worst case" conditions -- The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves -- representing boundarie...
Description	TMOS E-FET High Energy Power FET N-channel Enhancement-Mode Silicon Gate From old datasheet system TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.180 OHM
File Size	221.74K / 8 Page	View it Online	Download Datasheet

				ON Semiconductor MOTOROLA[Motorola Inc] MOTOROLA[Motorola, Inc]
Part No.	MTP12N10E MTP12N10E_D ON2545 MTP12N10E-D
OCR Text	...75 Unit Vdc Vdc Vdc Adc Watts W/c c UNcLAMPED DRAIN-TO-SOURcE AVALANcHE cHARAcTERISTIcS (TJ 175c) Single Pulse Drain-to-Source Avalanche Energy -- Starting TJ = 25c (VDD = 25 V, VGS = 10 V, L = 4.03 mH, RG = 25 , Peak IL = 12 A) (See F...
Description	TMOS E-FET Power Field Effect Transistor N-channel Enhancement-Mode Silicon Gate TMOS POWER FET 12 AMPERES 100 VOLTS RDS(on) = 0.16 OHM TMOS POWER FET 12 AMPERES 60 VOLTS From old datasheet system
File Size	239.56K / 6 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc] ON Semi
Part No.	MTP12P10 MTP12P10_D ON2547
OCR Text	...nit Vdc Vdc Vdc Vpk Adc Watts W/c c THERMAL cHARAcTERISTIcS Thermal Resistance -- Junction to case Thermal Resistance -- Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds RJc RJA TL 1.67 6...
Description	From old datasheet system TMOS POWER FET 12 AMPERES 60 VOLTS TMOS POWER FET 12 AMPERES 100 VOLTS RDS(on) = 0.3 OHM
File Size	190.83K / 6 Page	View it Online	Download Datasheet

				Motorola, Inc. ON Semi MOTOROLA[Motorola, Inc]
Part No.	MTP15N06VL MTP15N06VL_D ON2553
OCR Text	...Vdc Vdc Vdc Vpk Adc Apk Watts W/c c mJ c/W c Designer's Data for "Worst case" conditions -- The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves -- representing boundarie...
Description	TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on) = 0.085 OHM From old datasheet system
File Size	215.91K / 8 Page	View it Online	Download Datasheet

				Motorola, Inc. ON Semi MOTOROLA[Motorola, Inc]
Part No.	MTP15N06V ON2554
OCR Text	...Vdc Vdc Vdc Vpk Adc Apk Watts W/c c mJ c/W c Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds Designer's Data for "Worst case" conditions -- The Designer's Data Sheet permits the design of most circuits en...
Description	TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on) = 0.12 OHM From old datasheet system
File Size	163.67K / 8 Page	View it Online	Download Datasheet

				ON Semiconductor MOTOROLA[Motorola, Inc]
Part No.	MTP16N25E MTP16N25E_D ON2556 MTP16N25E-D
OCR Text	...Vdc Vdc Vdc Vpk Adc Apk Watts W/c c mJ c/W c Designer's Data for "Worst case" conditions -- The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves -- representing boundarie...
Description	TMOS E-FET Power Field Effect Transistor N-channel Enhancement-Mode Silicon Gate TMOS POWER FET 16 AMPERES 250 VOLTS RDS(on) = 0.25 OHM From old datasheet system
File Size	222.23K / 8 Page	View it Online	Download Datasheet

				Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc]
Part No.	MTP23P06V ON2569
OCR Text	...Vdc Vdc Vdc Vpk Adc Apk Watts W/c c mJ c/W c Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds Designer's Data for "Worst case" conditions -- The Designer's Data Sheet permits the design of most circuits en...
Description	TMOS POWER FET 23 AMPERES 60 VOLTS RDS(on) = 0.120 OHM 23 A, 60 V, 0.12 ohm, P-cHANNEL, Si, POWER, MOSFET, TO-220AB From old datasheet system
File Size	192.44K / 8 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MTP2P50 MTP2P50E ON2583
OCR Text	...Vdc Vdc Vdc Vpk Adc Apk Watts W/c c mJ c/W c Designer's Data for "Worst case" conditions -- The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves -- representing boundarie...
Description	From old datasheet system TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 6.0 OHM
File Size	230.76K / 8 Page	View it Online	Download Datasheet

				Motorola, Inc. ON Semi MOTOROLA[Motorola, Inc]
Part No.	MTP3055VL MTP3055VL_D ON2587
OCR Text	...Vdc Vdc Vdc Vpk Adc Apk Watts W/c c mJ c/W c Designer's Data for "Worst case" conditions -- The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves -- representing boundarie...
Description	TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.18 OHM From old datasheet system
File Size	161.53K / 8 Page	View it Online	Download Datasheet

For c stm Found Datasheets File :: 3251 Search Time::5.64ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | <7> | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |