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HYNIX[Hynix Semiconductor]
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
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| Part No. |
HY57V161610ET-7I HY57V161610ET-10I HY57V161610ET-15I HY57V161610ET-55I HY57V161610ET-5I HY57V161610ET-6I HY57V161610ET-8I HY57V161610ET-I HY57V161610ET
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| OCR Text |
...tes at CAS latency=2 and tCK2=8.9ns 3. VDD(min) of HY57V161610ET-5I/55I is 3.15V`
Rev. 0.1 / Nov. 2003
4
HY57V161610ET-I
CAPACITANCE (TA=25C, f=1MHz)
Parameter CLK Input capacitance A0 ~ A10, BA CKE, CS, RAS, CAS, WE, UDQM, LDQM ... |
| Description |
SDRAM - 16Mb
2 Banks x 512K x 16 Bit Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO50
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| File Size |
198.94K /
13 Page |
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Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
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| Part No. |
HY57V161610D HY57V161610DTC-10 HY57V161610DTC-5 HY57V161610DTC-55 HY57V161610DTC-7 HY57V161610DTC-8 HY57V161610DTC-15 HY57V161610DTC-6 HY57V161610DTC-10I HY57V161610DTC-6I HY57V161610DTC-55I HY57V161610DTC-7I
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| OCR Text |
...tes at CAS latency=2 and tCK2=8.9ns 3. VDD(min) of HY57V161610DTC-5/55 is 3.15V`
Rev. 4.0/Aug. 02
4
HY57V161610D
CAPACITANCE (TA=25C, f=1MHz)
Parameter CLK Input capacitance A0 ~ A10, BA CKE, CS, RAS, CAS, WE, UDQM, LDQM DQ0 ~ DQ... |
| Description |
2 Banks x 512K x 16 Bit Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO50
2 Banks x 512K x 16 Bit Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 5.5 ns, PDSO50
SDRAM - 16Mb
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| File Size |
171.73K /
13 Page |
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Samsung Electronics
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| Part No. |
K8F5615EBM
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| OCR Text |
...eters are changed tba : 8ns ==> 9ns (@83mhz) tbdh : 1.5ns ==> 3ns (@66mhz, 83mhz), 2ns (@133mhz) toe : 20ns ==> 15ns trdya : 8ns ==> 9ns (@83mhz) trdys : 4ns (@66mhz, 83mhz), 1.5ns (@133mhz) ==> 3ns (@66mhz, 83mhz), 2ns (@133mhz) toer : 20n... |
| Description |
256Mb M-die MLC NOR Specification
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| File Size |
1,124.45K /
59 Page |
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INTERSIL[Intersil Corporation]
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| Part No. |
ISL84714IH ISL84714IHZ-T ISL84714 ISL84714IH-T
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| OCR Text |
...g speeds (tON = 7.5ns, tOFF = 2.9ns). The digital logic input is 1.8V CMOS compatible when using a single +3V supply. Cell phones, for example, often face ASIC functionality limitations. The number of analog input or GPIO pins may be limite... |
| Description |
Ultra Low ON-Resistance, Low Voltage, Single Supply, SPDT Analog Switch
Ultra Low ON-Resistance Low Voltage Single Supply SPDT Analog Switch
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| File Size |
280.03K /
10 Page |
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it Online |
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Samsung Electronic
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| Part No. |
M368L1713BT1
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| OCR Text |
...signal input setup time 1.1ns 0.9ns 0.9ns b0h 90h 90h 33 command and address signal input hold time 1.1ns 0.9ns 0.9ns b0h 90h 90h 34 data signal input setup time 0.6ns 0.5ns 0.5ns 60h 50h 50h
serial presence detect rev. 0.4 jan. 2001 184... |
| Description |
16M x 64 DDR SDRAM 184pin DIMM based on 16Mx8 Serial Presence Detect
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| File Size |
21.40K /
3 Page |
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it Online |
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Samsung Electronic
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| Part No. |
M368L3313BT1
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| OCR Text |
...signal input setup time 1.1ns 0.9ns 0.9ns b0h 90h 90h 33 command and address signal input hold time 1.1ns 0.9ns 0.9ns b0h 90h 90h 34 data signal input setup time 0.6ns 0.5ns 0.5ns 60h 50h 50h
serial presence detect rev. 0.4 jan. 2001 18... |
| Description |
32M x 64 DDR SDRAM 184pin DIMM based on 16Mx8 Data Sheet
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| File Size |
21.41K /
3 Page |
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Hyundai
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| Part No. |
HY57V161610D HY57V
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| OCR Text |
...tes at CAS latency=2 and tCK2=8.9ns 3. VDD(min) of HY57V161610DTC-5/55 is 3.15V`
Rev. 3.3/Mar.99
4
HY57V161610D
CAPACITANCE (TA=25C, f=1MHz)
Parameter CLK Input capacitance A0 ~ A10, BA CKE, CS, RAS, CAS, WE, UDQM, LDQM DQ0 ~ DQ1... |
| Description |
16M DRAM
From old datasheet system
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| File Size |
120.08K /
11 Page |
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hynix
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| Part No. |
HY57V161610ET-6
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| OCR Text |
...tes at CAS latency=2 and tCK2=8.9ns 3. VDD(min) of HY57V161610ET-5/55 is 3.15V`
Rev. 0.2 / Aug. 2003
4
HY57V161610E
CAPACITANCE (TA=25C, f=1MHz)
Parameter CLK Input capacitance A0 ~ A10, BA CKE, CS, RAS, CAS, WE, UDQM, LDQM DQ0 ~... |
| Description |
IC,SDRAM,2X512KX16,CMOS,TSOP,50PIN,PLASTIC
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| File Size |
159.80K /
13 Page |
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it Online |
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