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NTE[NTE Electronics]
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| Part No. |
NTE275 NTE274
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| OCR Text |
...Sustaining Voltage: VCEO(sus) = 80v Min D Monolithic Construction with Built-In Base-Emitter Shunt Resistors Absolute Maximum Ratings: Colle...4a Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ... |
| Description |
Silicon complementary PNP transistor. Darlington power apmlifier, switch. Silicon Complementary Transistors Darlington Power Amplifier, Switch
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| File Size |
25.03K /
2 Page |
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it Online |
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International Rectifier
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| Part No. |
IRF4000 IRF4000TR
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| OCR Text |
..., VGS = 0V
e e
e
VDS = 80v, VGS = 0V, TJ = 125C VGS = 30V VGS = -30V
Dynamic @ TJ = 25C (unless otherwise specified)
Parameter
...4a VDS = 80v VGS = 10V VDD = 50V ID = 1.4a RG = 6.2 VGS = 10V VGS = 0V
Conditions
VDS = 25V, ID ... |
| Description |
2.4 A, 100 V, 0.35 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET IEEE 802.3af Compliant PoE Switch in Power Sourcing Equipment From old datasheet system
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| File Size |
568.55K /
7 Page |
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it Online |
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ShenZhen FreesCale Electronics. Co., Ltd
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| Part No. |
IRF9530N
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| OCR Text |
... gs = 0v CCC CCC -250 v ds = -80v, v gs = 0v, t j = 150c gate-to-source forward leakage CCC CCC 100 v gs = 20v gate-to-source reverse l...4a q gs gate-to-source charge CCC CCC 8.3 nc v ds = -80v q gd gate-to-drain ("miller") charge CCC C... |
| Description |
HEXFET? Power MOSFET
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| File Size |
213.63K /
7 Page |
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it Online |
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ShenZhen FreesCale Electronics. Co., Ltd
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| Part No. |
IRF9530NS IRF9530NSL
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| OCR Text |
... gs = 0v CCC CCC -250 v ds = -80v, v gs = 0v, t j = 150c gate-to-source forward leakage CCC CCC 100 v gs = 20v gate-to-source reverse l...4a q gs gate-to-source charge CCC CCC 8.3 nc v ds = -80v q gd gate-to-drain ("miller") charge CCC C... |
| Description |
HEXFET? Power MOSFET
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| File Size |
257.22K /
8 Page |
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it Online |
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Price and Availability
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