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Crydom
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| Part No. |
AO241 AO241R
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| OCR Text |
...vdc ? 10 9 ohm max. capacitance 8.0 pf a mbient operating temperature range -30 to 80oc ambient storage temperature range -30 to 125oc m e c hani c a l spe c i f i c a t ion s weight : (typical) 0.15 oz. (4.3 g) encapsulation: thermally c... |
| Description |
AC OUTPUT MINI-SIP
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| File Size |
34.77K /
1 Page |
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SamHop Microelectronics
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| Part No. |
STT622S
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| OCR Text |
...ation with temperature 20 16 12 8 4 0 0 0.5 1.0 1.5 2.0 2.5 3.0 v gs =3.5v v gs =3v v gs =10v v gs =4v v gs =4.5v 10 8 6 4 2 0 0 0.8 4.8 4.0 3.2 2.4 1.6 25 c tj=125 c -55 c 180 150 120 90 60 30 1 1 4 8 12 16 20 v gs =10v v gs =4.5v 3.0... |
| Description |
N-Channel Logic Level Enhancement Mode Field Effect Transistor
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| File Size |
131.94K /
7 Page |
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SamHop Microelectronics...
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| Part No. |
STM301N
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| OCR Text |
...t to change without notice. s o-8 1 a t a =25 c t a =70 c a w 4.2 t a =70 c 1.6 green product
symbol min typ max units bv dss 100 v 1 i...ohm total gate charge rise time turn-off delay time v ds =50v,i d =5.2a,v gs =10v fall time turn-on ... |
| Description |
Super high dense cell design for low RDS(ON).
N-Channel Logic Level Enhancement Mode Field Effect Transistor
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| File Size |
189.64K /
7 Page |
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it Online |
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SamHop Microelectronics
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| Part No. |
STD466S
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| OCR Text |
...imum ratings v gs =0v,i s =7a 0.8 1.3 v notes nc 13 v ds =20v,i d =19a,v gs =10v v ds =20v,i d =19a,v gs =4.5v a.pulse test:pulse width < 300us, duty cycle < 2%. b.guaranteed by design, not subject to production testing. _ _ 11.73 55 40... |
| Description |
N-Channel Logic Level Enhancement Mode Field Effect Transistor
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| File Size |
113.50K /
8 Page |
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The ABB Group
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| Part No. |
5SMX12L1273
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| OCR Text |
...VCC = 600 V, IC = 100 A, RG = 6.8 , VGE = 15 V, L = 60 nH, inductive load VCC = 600 V, IC = 100 A, RG = 10 , VGE = 15 V, L = 60 nH, inductiv...ohm RGoff = 10 ohm VGE = 15 V Tvj = 125 C L = 60 nH Eon, E off [J]
0.050 0.045 0.040 0.035 0.030 ... |
| Description |
IGBT-Die
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| File Size |
64.43K /
5 Page |
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Analog Power
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| Part No. |
AM3837P
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| OCR Text |
...9 i dm 10 i s -1.6 i f 0.5 i fm 8 t a =25 o c1.15 t a =70 o c0.7 t a =25 o c1.0 t a =70 o c0.6 t j , t stg -55 to 150 o c average forward cu...ohm, v gen = -4.5 v, r g = 6 ohm ns drain-source on-state resistance a dynamic b v ds = ... |
| Description |
P-Channel 30-V (D-S) MOSFET With Schottky Diode
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| File Size |
212.00K /
5 Page |
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TY Semiconductor Co., Ltd
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| Part No. |
AM3829P
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| OCR Text |
...mum units v ds -20 v ka 20 v gs 8 t a =25 o c2.5 t a =70 o c1.9 i dm 10 i s -1.6 i f 0.5 i fm 8 t a =25 o c1.15 t a =70 o c0.7 t a =25 o c1....ohm, v gen = -4.5 v, r g = 6 ohm ns drain-source on-state resistance a dynamic b v ds = -5... |
| Description |
Low rDS(on) provides higher efficiency and extends battery life
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| File Size |
212.02K /
2 Page |
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it Online |
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Price and Availability
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