750-850 pdf Datasheet P7 Full Text Search --- IC-ON-LINE


	Part Number	Hot Search : C74HC40 M16811 BYT53 M29W200 240SC6MH 5FN256C1 90FEB SM210T
	Product Description
	Full Text Search

750-850 Datasheet PDF File

For 750-850 Found Datasheets File :: 7960 Search Time::1.297ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | <7> | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

				ADPOW[Advanced Power Technology]
Part No.	APT50M50JVFR
OCR Text	...uty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 1.21mH, R = 25, Peak I = 77A j G L 5 I -I [Cont.], di/ = 100A/s, V S D DD VDSS, Tj 150C, RG = 2.0, dt VR = 200V APT Reserves the right to change, without notice...
Description	POWER MOS V 500V 77A 0.050 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	73.13K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technology, Ltd. ADPOW[Advanced Power Technology]
Part No.	APT50M50JVR
OCR Text	...uty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 1.21mH, R = 25, Peak I = 77A j G L APT Reserves the right to change, without notice, the specifications and information contained herein. 0.2 , THERMAL IMPEDANCE...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET POWER MOS V 500V 77A 0.050 Ohm
File Size	70.86K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technology, Ltd. ADPOW[Advanced Power Technology]
Part No.	APT50M50 APT50M50PVR
OCR Text	... PR 0.20 40 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 1.30mH, R = 25, Peak I =74.5A j G L Junction to Ambient 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < ...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET POWER MOS V 500V 74.5A 0.050 Ohm
File Size	35.96K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8024B2FLL APT8024LFLL
OCR Text	...T C/W 0.22 40 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 5.20mH, R = 25W, Peak I = 31A j G L 5 The maximum current is limited by lead temperature 1 Repetitive Rating: Pulse width limited by maximum junction temperature...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	58.10K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8024B2LL APT8024LLL
OCR Text	...uty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 5.20mH, R = 25W, Peak I = 31A j G L 5 dv/ numbers reflect the limitations of the test circuit rather than the dt device itself. IS -ID[Cont.] di/dt 700A/s VR VDSS T...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	57.21K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8024JFLL
OCR Text	...C/W 0.27 40 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 5.95mH, R = 25W, Peak I = 29A temperature. j G L 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 5 dv/ numbers reflect the limitations of the test circuit rather th...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	58.21K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8024JLL APT6021BLL APT6021SLL APT8014JLL APT8020JLL
OCR Text	...uty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 5.95mH, R = 25W, Peak I = 29A j G L 5 dv/ numbers reflect the limitations of the test circuit rather than the dt device itself. IS -ID[Cont.] di/dt 700A/s VR VDSS T...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	56.72K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8030B2VR
OCR Text	...uty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 6.86mH, R = 25, Peak I = 27A j G L 5 These dimensions are equal to the TO-247AD without mounting hole APT Reserves the right to change, without notice, the specific...
Description	POWER MOS V 800V 27A 0.300 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	58.13K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8030JVR
OCR Text	...uty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 8.00mH, R = 25, Peak I = 25A j G L APT Reserves the right to change, without notice, the specifications and information contained herein. 0.3 , THERMAL IMPEDANCE...
Description	POWER MOS V 800V 25A 0.300 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	67.66K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8030LVR
OCR Text	...T C/W 0.24 40 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 6.86mH, R = 25, Peak I = 27A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% ...
Description	POWER MOS V 800V 27A 0.300 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	60.26K / 4 Page	View it Online	Download Datasheet

For 750-850 Found Datasheets File :: 7960 Search Time::1.297ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | <7> | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |